SESDB5V0DB 52 W Bi-direction ESD Protection Diode DFNWB0.6x0.3 Package DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer ina ry equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. Marking&RGH, im Front side FEATURES z Excellent package:0.6mm×0.3mm×0.31mm Low capacitance: 3pF(Typ.) z Fast response time z Low reverse stand−off voltage: 5V z JESD22-A114-B ESD Rating of class 3B per human z Low reverse clamping voltage Bi-directional ESD protection of one line z Pr el z z Low leakage current z Moisture Sensitivity Level 1 body model z IEC 61000-4-2 Level 4 ESD protection APPLICATIONS z Computers and peripherals z Portable electronics z High speed data lines z Other electronics equipments communi- z Audio and video equipment z Cellular handsets and accessories 2014.07 cation systems www.willas.com.tw Rev. A 第1頁 SESDB5V0DB 52 W Bi-direction ESD Protection Diode DFNWB0.6x0.3 Package MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol IEC 61000-4-2 ESD Voltage Limit Air Model ±15 Contact Model ±15 (1) JESD22-A114-B ESD Voltage Per Human Body Model ESD Voltage Unit kV VESD ±16 Machine Model ±0.4 PPP(2) 52 W Peak Pulse Current IPP(2) 4 A Lead Solder Temperature − Maximum (10 Second Duration) TL 260 ℃ Junction Temperature Tj 150 ℃ Tstg -55 ~ +150 ℃ ina ry Peak Pulse Power Storage Temperature Range (1).Device stressed with ten non-repetitive ESD pulses. (2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5. im ESD standards compliance IEC61000-4-2 Standard Contact Discharge Air Discharge JESD22-A114-B Standard ESD Class Human Body Discharge V Test Voltage kV Level Test Voltage kV 0 0～249 1 2 1 2 4 2 4 1A 1B 1C 250～499 500～999 1000～1999 6 3 8 8 4 15 2 3A 3B 2000～3999 4000～7999 8000～15999 2 3 4 Pr el Level ESD pulse waveform according to IEC61000-4-2 2014.07 8/20μs pulse waveform according to IEC 61000-4-5 www.willas.com.tw Rev. A 第2頁 SESDB5V0DB 52 W Bi-direction ESD Protection Diode DFNWB0.6x0.3 Package ELECTRICAL PARAMETER Symbol Parameter VC Clamping Voltage @ IPP IPP Peak Pulse Current VBR Breakdown Voltage @ IT Test Current IR Reverse Leakage Current @ VRWM VRWM Reverse Standoff Voltage ina ry IT V-I characteristics for a Bi-directional TVS ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Reverse stand off voltage Reverse leakage current Test conditions Min Clamping voltage Junction capacitance Typ （1） VRWM IR V(BR) VRWM=5V IT=1mA 5.6 Pr el Breakdown voltage Symbol im Parameter （2） VC CJ IPP=4A VR=0V,f=1MHz 3 Max Unit 5 V 1 μA 8 V 13 V pF (1).Other voltages available upon request. (2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5 2014.07 www.willas.com.tw Rev. A 第3頁 SESDB5V0DB 52 W Bi-direction ESD Protection Diode DFNWB0.6x0.3 Package TYPICAL CHARACTERISTICS Reverse Capacitance Characteristics Characteristics 100 4 Ta=25℃ Pulsed f=1MHz Ta=25℃ REVERSE CURRENT IR 50 3 JUNCTION CAPACITANCE CJ (pF) (mA) 75 25 0 Ta=100℃ -25 -50 -100 ina ry 1 -75 0 -6 -3 0 3 REVERSE VOLTAGE VC ---15 Ta=25℃ (V) 9 0 1 2 REVERSE VOLTAGE 3 VR 4 5 (V) Pr el tp=8/20us IPP VR 6 im -9 CLAMPING VOLTAGE VC(V) 2 12 9 6 3 1.0 1.5 2.0 2.5 3.0 3.5 4.0 REVERSE PEAK PULSE CURRENT IPP (A) 2014.07 www.willas.com.tw Rev. A 第4頁 SESDB5V0DB 52 W Bi-direction ESD Protection Diode DFNWB0.6x0.3 Package Symbol Dimensions In Millimeters Min. Max. 0.275 0.340 0.570 0.670 0.270 0.370 0.225 0.295 0.050 REF. 0.365 0.435 0.125 0.195 0.030 REF. Dimensions In Inches Min. Max. 0.011 0.013 0.022 0.026 0.011 0.015 0.009 0.012 0.002 REF. 0.014 0.017 0.005 0.008 0.001 REF. Pr el im A D E b c e L1 L2 ina ry PACKAGE OUTLINE AND PAD LAYOUT INFORMATION 2014.07 www.willas.com.tw Rev. A 第5頁 52 W Bi-direction ESD Protection Diode DFNWB0.6x0.3 Package SESDB5V0DB TAPE AND REEL INFORMATION Pr el im ina ry * 2014.07 www.willas.com.tw Rev. A 第6頁 52 W Bi-direction ESD Protection Diode DFNWB0.6x0.3 Package Device PN SESDB5V0DB -T(1)H(2)-WS Note: (1) Packing code, Tape & Reel Packing SESDB5V0DB Packing Tape&Reel: 10 Kpcs/Reel ry (2) H is RoHS and Haloge free p roduct for packing code suffix “H” ***Disclaimer*** Pr eli mi na WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014.07 www.willas.com.tw Rev. A 第7頁