2SA1576AxT1 (SOT-323)

2SA1576AxT1
SOT-323 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
FEATURES
z
Excellent hFE linearity
SOT-323
z
Pb-Free package is available
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
1. BASE
z
Moisture Sensitivity Level 1
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current -Continuous
-150
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA,IE=0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-60V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-1mA
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
fT
Collector output capacitance
Cob
120
560
IC=-50mA,IB=-5mA
-0.5
VCE=-12V,IC=-2mA,f=30MHz
VCB=-12V,IE=0,f=1MHz
140
V
MHz
4
5
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
2012-
Q
R
S
120-270
180-390
270-560
FQ
FR
FS
WILLAS ELECTRONIC CORP.
2SA1576AxT1
SOT-323 Plastic-Encapsulate Transistors
hFE
Static Characteristic
-7
COMMON
EMITTER
Ta=25℃
-20uA
(mA)
-6
-18uA
Ta=100℃
hFE
-5
-14uA
-12uA
-4
-10uA
-3
-8uA
-6uA
-2
Ta=25℃
DC CURRENT GAIN
IC
-16uA
COLLECTOR CURRENT
IC
——
1000
100
-4uA
-1
COMMON EMITTER
VCE= -6V
IB=-2uA
-0
10
-0
-2
-4
-6
-8
COLLECTOR-EMITTER VOLTAGE
VCEsat ——
-10
VCE
VBEsat ——
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
-200
Ta=100℃
-100
Ta=25℃
-10
-100
COLLECTOR CURRENT
Cob / Cib
——
50
-100
IC
IC
IC
β=10
-800
Ta=25℃
-600
Ta=100℃
-400
-200
-0.1
-150
-150
(mA)
-1000
β=10
-1
-10
IC
-0
(mA)
-1
-10
COLLECTOR CURRENT
fT
VCB / VEB
——
IC
(mA)
-100
-150
IC
1000
(MHz)
f=1MHz
IE=0 / IC=0
TRANSITION FREQUENCY
(pF)
fT
Ta=25℃
Cib
10
CAPACITANCE
C
-1
COLLECTOR CURRENT
-300
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
-12
(V)
Cob
100
VCE=-12V
Ta=25℃
1
-0.1
10
-1
-10
REVERSE BIAS VOLTAGE
PC
COLLECTOR POWER DISSIPATION
PC (mW)
250
——
V
-20
-1
-30
-10
COLLECTOR CURRENT
(V)
IC
(mA)
Ta
200
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
2012-
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1576AxT1
THRU
SOT-323 Plastic-Encapsulate Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-323
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.054(1.35)
.045(1.15)
Mechanical data
0.012(0.3) Typ.
.087(2.20)
.070(1.80)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.096(2.45)
.078(2.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
.056(1.40)
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
Maximum Average Forward Rectified Current
IO
IFSM
.047(1.20)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
.004(0.10)MAX.
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.010(0.25)
.003(0.08)
18
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
80
100
115
150
120
200
Volts
42
56
70
105
140
Volts
60
80
100
150
200
Volts
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
VF
.016(0.40)
IR
@T A=125℃
.008(0.20)
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
.043(1.10)
.032(0.80)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
0.50
0.70
0.85
0.9
0.92
0.5
Volts
mAmps
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-
Rev.C
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1576AxT1
THRU
SOT-323 Plastic-Encapsulate Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Pb Free Product
Package outline
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
Ordering
Information: 0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
0.012(0.3) Typ.
low
forward
voltage
drop.
• High current capability,
Device PN Packing • High surge capability. (2)
(1)
2SA1576A x T1 G ‐WS Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
0.071(1.8)
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” high-speed switching.
• Ultra
0.056(1.4)
• Silicon epitaxial planar chip, metal silicon junction.
(2) CLASSIFICATION OF h
FE RANK parts meet environmental standards of
• Lead-free
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical
data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
Marking Codecontained are intended to provide a product description only. "Typical" parameters 12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
which may be included on WILLAS data sheets and/ or specifications can Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Volts
Maximum DC and do vary in different applications and actual performance may vary over time. Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Amps
Maximum Average
Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge
Current 8.3 ms single half sine-wave
use of any product or circuit. 30
IFSM
Amps
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
PF
120
Typical Junction
Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
or indirectly cause injury or threaten a life without expressed written approval Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum Average
Reverse Current at @T A=25℃
of WILLAS. Customers using or selling WILLAS components for use in IR
mAmps
10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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