WILLAS SOT-323 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ THRU 2SC4081xT1 FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process TRANSISTOR (NPN) design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to FEATURES optimize board space. z hFE high linearity Low power loss, efficiency. • Excellent High current capability,islow forward voltage drop. • Pb-Free package available z • High surge capability. RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. free product for packing code suffix “H” Ultra high-speed switching. • Halogen z Sensitivity Levelmetal 1 silicon junction. Silicon epitaxial planar chip, • Moisture parts(T meet environmental standards of noted) • Lead-free ℃ unless otherwise a=25 MAXIMUM RATINGS MIL-STD-19500 /228 RoHS product for packing code suffix "G" • Symbol Parameter Value Halogen free product for packing code suffix "H" SOT-323 0.146(3.7) 0.130(3.3) 1. BASE 2. EMITTER Unit 60 V Collector-Base Voltage Mechanical data VCEO 50 V Collector-Emitter : UL94-V0 ratedVoltage flame retardant • Epoxy : Molded plastic, SOD-123H • Case Emitter-Base Voltage 7 V , • Terminals :Plated terminals, solderable per150 MIL-STD-750 mA Collector Current -Continuous IC PC TJ Tstg Method 2026 Collector Power Dissipation • Polarity : Indicated by cathode band Junction Temperature • Mounting Position : Any Storage Temperature • Weight : Approximated 0.011 gram 0.071(1.8) 0.056(1.4) 3. COLLECTOR VCBO VEBO 0.012(0.3) Typ. 200 mW 150 ℃ -55-150 ℃ 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Symbol Test conditions Single phase half wave, 60Hz, resistive of inductive load. Parameter For capacitive load, derate current by 20% Marking Code 12 20 13 30 14 40 = IC=1mA,IB 0 V(BR)CEO Collector-emitter breakdown voltage VRRM Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage VDC 15 50 14 21 28 35 20 30 40 50 VRMS = IE=50μA,IC 0 V(BR)EBO Maximum RMS Voltage Emitter-base breakdown voltage 16 60 7 RΘJA hFE(1) CJ Typical Junction Capacitance (Note 1) Storage Temperature Range 56 70 80 100 @T A=125℃ NOTES: Rank 1- Measured at 1 MHZ and applied reverse voltage ofQ 4.0 VDC. - 65 to +175 120 200 V 105 140 V 150 200 V A A μA ℃ 560 -55 to +150 V 0.4 180 MHz IR 0.70 0.5 pF 0.9 0.85 3.5 0.92 V m 10 R S 120-270 180-390 270-560 BQ BR BS 2- Thermal Resistance From Junction to Ambient 2012- 40 120 V 115 150 μA 0.1 0.50 V= CobVF = CB12V,IE 0,f 1MHz Maximum Average Reverse Current at @T A=25℃ 2012-06 0.1 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Forward at 1.0A DC Collector outputVoltage capacitance Range Marking 120 VCE=12V,I =C = 2mA,f 30MHz fT CHARACTERISTICS CLASSIFICATION OF hFE(1) VCE=6V,I =C 1mA TSTG Transition frequency 10 100 1.0 30 -55 to +125 TJ= IC=50mA,I VCE(sat) B 5mA Operating Temperature Range Collector-emitter saturation voltage V 42 superimposed on rated load (JEDEC method) Unit FM180-MH FM1100-MH FM1150-MH FM1200-MH U 60 Peak Forward Surge Current 8.3 ms single half sine-wave IFSM = VEB=7V,IC 0 IEBO Emitter cut-off current Typical Thermal Resistance (Note 2) DC current gain Max 18 80 50 VCB=60V,IE 0 I= IO CBO Maximum Average Collector cut-off Forward currentRectified Current Rated DC Blocking Voltage Typ = IC=50μA,I 60 V(BR)CBO E 0 FM130-MH FM140-MH FM150-MH FM160-MH SYMBOL FM120-MH Collector-base breakdown voltage RATINGS Min WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SC4081xT1 THRU FM1200-M+ SOT-323 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Typical Characterisitics Static Characteristic 12 excellent power • Batch process design,40uA COMMON EMITTER dissipation Ta=25℃ hFE SOD-123H DC CURRENT GAIN COLLECTOR CURRENT Ta=25℃ 0.146(3.7) 0.130(3.3) 100 COMMON EMITTER VCE=6V 1 VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) a Ta=100℃ —— 100 IC 150 (mA) IC 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.8 , • Terminals :Plated terminals, solderable per MIL-STD-750 T =25℃ 0.6 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.4 10 COLLECTOR CURRENT 1 Method 2026 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 10 0.5 IC —— BEsat 1.0 Pb Free Product IC Ta=100℃ IC (mA) offers 36uA better reverse leakage current and thermal resistance. 9 application in order to • Low profile surface mounted32uA optimize board space. 28uA • Low power loss, high efficiency. 24uA drop. • High 6current capability, low forward voltage 20uA • High surge capability. 16uA • Guardring for overvoltage protection. 12uA • Ultra3high-speed switching. 8uA • Silicon epitaxial planar chip, metal silicon junction. =4uA • Lead-free parts meet environmental standardsIBof 0 MIL-STD-19500 /228 0 2 4 6 8 packing code suffix "G" • RoHS product for COLLECTOR-EMITTER VOLTAGE VCE (V) Halogen free product for packing code suffix "H" —— Package outline 1000 Features V Mechanical data hFE 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) 0.1 Ta=100℃ Ta=25℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS β=10 Marking Code IC RATINGS 150 100 —— VRMS 14 21 VDC 20 30 COLLCETOR CURRENT Ta=25℃ Peak Forward Surge Current 8.3 ms single half sine-wave 1 superimposed on rated load (JEDEC method) 0.6 Storage Temperature RangeBASE-EMMITER VOLTAGE 0.8 VBE TJ (MHz) 35 42Cib 56 40 50 60 80 C 10 115 150 120 200 V 70 105 140 V 100 150 200 V Ta=25℃ 100 1.0 A C ob 30 1 A 40 120 -55 to +125 0.1 ℃ -55 to +150 0.1 VF 1 10 - 65 to +175 REVERSE VOLTAGE V (V) 0.50 IR fT @T A=125℃ 1- Measured at 1 100MHZ and applied reverse voltage of 4.0 VDC. 28 f=1MHz =0/IC=0 I10 E 20 PC —— Ta FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH 250 fT —— IC CHARACTERISTICS TRANSITION FREQUENCY NOTES: 18 80 1.0 TSTG Maximum Average Reverse Current at @T A=25℃ 16 60 (V) Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 15 50 COMMON CJ EMITTER VCE=6V Typical Junction Capacitance (Note 1) 1000 IO IFSM RΘJA Typical Thermal Resistance (Note 2) 0.4 (mA) 14 40 CAPACITANCE IC Ta=100℃ Maximum Average Forward Rectified Current 0.2 100 150 IC 13 30 (pF) Maximum RMS Voltage (mA) VRRM 0.1 Operating Temperature Range 10 Cob/ Cib —— VCB/ VEB 100 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH FM130-MH VBE Maximum Recurrent Peak Reverse Voltage 1 COLLECTOR CURRENT 12 20 10 Maximum DC Blocking Voltage 0.01 0.1 COLLECTOR POWER DISSIPATION PC (mW) β=10 Ratings at 25℃ ambient temperature unless otherwise specified. 0.2 0.1 1 10 100 150 Single phase half wave, 60Hz, resistive of inductive load. COLLECTOR CURRENT IC (mA) For capacitive load, derate current by 20% 2- Thermal Resistance From Junction to Ambient VCE=12V 0.70 0.9 0.85 0.92 0.5 200 V m 10 150 100 50 Ta=25℃ 10 0 1 10 COLLECTOR CURRENT 2012-06 2012- 50 IC (mA) 0 25 50 75 100 AMBIENT TEMPERATURE Ta 125 150 (℃ ) WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS SOT-323 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ THRU 2SC4081xT1 FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-323 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data .054(1.35) .045(1.15) .087(2.20) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H .070(1.80) , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .004(0.10)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U .056(1.40) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage .047(1.20) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VRRM 14 40 .010(0.25) 18 10 80 100 .003(0.08) 15 50 16 60 115 150 120 200 V VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 V IO IFSM Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 13 30 V RΘJA Typical Thermal Resistance (Note 2) 12 20 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR .016(0.40) .008(0.20) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. NOTES: SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 2- Thermal Resistance From Junction to Ambient 0.50 0.70 .043(1.10) .032(0.80) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.85 0.9 0.92 0.5 10 V m Dimensions in inches and (millimeters) 2012-06 2012- Rev.C CORP WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS SOT-323 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ FM120-M+ THRU 2SC4081xT1 FM1200-M+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. (2) (1) capability.T1 G ‐WS • High surge 2SC4081 x Tape&Reel: 3 Kpcs/Reel Guardring for overvoltage protection. • Note: (1) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Ultra high-speed switching. epitaxial planar chip, FE metal silicon junction. • Silicon (2) CLASSIFICATION OF h RANK • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage V VRRM V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC A MaximumWILLAS does not assume any liability arising out of the application or Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM A superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TJ - 65 to +175 Storage Temperature Range TSTG applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U or indirectly cause injury or threaten a life without expressed written approval V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR m 10 @T A=125℃ Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.