2SC4081xT1(SOT 323)

WILLAS
SOT-323
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM120-M+
THRU
2SC4081xT1
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process
TRANSISTOR
(NPN) design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
FEATURES
optimize board space.
z
hFE high
linearity
Low power loss,
efficiency.
• Excellent
High current
capability,islow
forward voltage drop.
• Pb-Free
package
available
z
• High surge capability.
RoHS product for packing code suffix ”G”
• Guardring for overvoltage protection.
free product
for packing code suffix “H”
Ultra high-speed
switching.
• Halogen
z
Sensitivity
Levelmetal
1 silicon junction.
Silicon epitaxial
planar chip,
• Moisture
parts(T
meet
environmental
standards of noted)
• Lead-free
℃ unless otherwise
a=25
MAXIMUM
RATINGS
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
Symbol
Parameter
Value
Halogen free product for packing code suffix "H"
SOT-323
0.146(3.7)
0.130(3.3)
1. BASE
2. EMITTER
Unit
60
V
Collector-Base
Voltage
Mechanical
data
VCEO
50
V
Collector-Emitter
: UL94-V0 ratedVoltage
flame retardant
• Epoxy
: Molded plastic,
SOD-123H
• Case
Emitter-Base
Voltage
7
V
,
• Terminals
:Plated
terminals,
solderable per150
MIL-STD-750 mA
Collector
Current
-Continuous
IC
PC
TJ
Tstg
Method 2026
Collector Power Dissipation
• Polarity : Indicated by cathode band
Junction Temperature
• Mounting Position : Any
Storage
Temperature
• Weight
: Approximated
0.011 gram
0.071(1.8)
0.056(1.4)
3. COLLECTOR
VCBO
VEBO
0.012(0.3) Typ.
200
mW
150
℃
-55-150
℃
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
(Ta=25℃
unless otherwise
specified)
MAXIMUM RATINGS AND
ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Symbol
Test conditions
Single phase
half wave, 60Hz, resistive of inductive
load.
Parameter
For capacitive load, derate current by 20%
Marking Code
12
20
13
30
14
40
=
IC=1mA,IB 0
V(BR)CEO
Collector-emitter breakdown voltage
VRRM
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
VDC
15
50
14
21
28
35
20
30
40
50
VRMS
=
IE=50μA,IC 0
V(BR)EBO
Maximum RMS Voltage
Emitter-base breakdown voltage
16
60
7
RΘJA
hFE(1)
CJ
Typical Junction Capacitance (Note 1)
Storage Temperature Range
56
70
80
100
@T A=125℃
NOTES:
Rank
1- Measured at 1 MHZ and applied reverse voltage ofQ
4.0 VDC.
- 65 to +175
120
200
V
105
140
V
150
200
V
A
A
μA
℃
560
-55
to +150 V
0.4
180
MHz
IR
0.70
0.5
pF 0.9
0.85
3.5
0.92
V
m
10
R
S
120-270
180-390
270-560
BQ
BR
BS
2- Thermal Resistance From Junction to Ambient
2012-
40
120
V
115
150
μA
0.1
0.50
V=
CobVF =
CB12V,IE 0,f 1MHz
Maximum Average Reverse Current at @T A=25℃
2012-06
0.1
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward
at 1.0A DC
Collector
outputVoltage
capacitance
Range
Marking
120
VCE=12V,I
=C =
2mA,f 30MHz
fT
CHARACTERISTICS
CLASSIFICATION
OF hFE(1)
VCE=6V,I
=C 1mA
TSTG
Transition frequency
10
100
1.0
30
-55 to +125
TJ=
IC=50mA,I
VCE(sat)
B 5mA
Operating Temperature
Range
Collector-emitter
saturation
voltage
V
42
superimposed on rated load (JEDEC method)
Unit
FM180-MH FM1100-MH FM1150-MH FM1200-MH U
60
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
=
VEB=7V,IC 0
IEBO
Emitter cut-off current
Typical
Thermal
Resistance (Note 2)
DC
current
gain
Max
18
80
50
VCB=60V,IE 0
I=
IO
CBO
Maximum Average
Collector
cut-off Forward
currentRectified Current
Rated DC Blocking Voltage
Typ
=
IC=50μA,I
60
V(BR)CBO
E 0
FM130-MH
FM140-MH FM150-MH FM160-MH
SYMBOL FM120-MH
Collector-base breakdown
voltage
RATINGS
Min
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC4081xT1
THRU
FM1200-M+
SOT-323
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Typical Characterisitics
Static Characteristic
12
excellent power
• Batch process design,40uA
COMMON
EMITTER
dissipation
Ta=25℃
hFE
SOD-123H
DC CURRENT GAIN
COLLECTOR CURRENT
Ta=25℃
0.146(3.7)
0.130(3.3)
100
COMMON EMITTER
VCE=6V
1
VCEsat
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
a
Ta=100℃
——
100
IC
150
(mA)
IC
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0.8
,
• Terminals :Plated terminals,
solderable per MIL-STD-750
T =25℃
0.6
• Polarity
: Indicated by cathode band
• Mounting Position : Any
• Weight
: Approximated 0.011 gram
0.4
10
COLLECTOR CURRENT
1
Method 2026
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
10
0.5
IC
——
BEsat
1.0
Pb Free Product
IC
Ta=100℃
IC
(mA)
offers
36uA
better reverse leakage current
and thermal resistance.
9
application in order to
• Low profile surface mounted32uA
optimize board space.
28uA
• Low power loss, high efficiency. 24uA
drop.
• High 6current capability, low forward voltage
20uA
• High surge capability.
16uA
• Guardring for overvoltage protection.
12uA
• Ultra3high-speed switching.
8uA
• Silicon epitaxial planar chip, metal silicon junction.
=4uA
• Lead-free parts meet environmental standardsIBof
0
MIL-STD-19500
/228
0
2
4
6
8
packing code suffix "G"
• RoHS product for
COLLECTOR-EMITTER VOLTAGE VCE (V)
Halogen free product for packing code suffix "H"
——
Package outline
1000
Features
V
Mechanical data
hFE
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
0.1
Ta=100℃
Ta=25℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
β=10
Marking Code
IC
RATINGS
150
100
——
VRMS
14
21
VDC
20
30
COLLCETOR CURRENT
Ta=25℃
Peak Forward Surge Current 8.3 ms single half sine-wave
1
superimposed on rated load (JEDEC method)
0.6
Storage Temperature RangeBASE-EMMITER VOLTAGE
0.8
VBE
TJ
(MHz)
35
42Cib
56
40
50
60
80
C
10
115
150
120
200
V
70
105
140
V
100
150
200
V
Ta=25℃
100
1.0
A
C ob
30
1
A
40
120
-55 to +125
0.1
℃
-55 to +150
0.1
VF
1
10
- 65 to +175
REVERSE VOLTAGE V (V)
0.50
IR
fT
@T A=125℃
1- Measured at 1
100MHZ and applied reverse voltage of 4.0 VDC.
28
f=1MHz
=0/IC=0
I10
E
20
PC —— Ta
FM140-MH FM150-MH FM160-MH
FM180-MH FM1100-MH FM1150-MH FM1200-MH U
SYMBOL FM120-MH FM130-MH
250
fT —— IC
CHARACTERISTICS
TRANSITION FREQUENCY
NOTES:
18
80
1.0
TSTG
Maximum Average Reverse Current at @T A=25℃
16
60
(V)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
15
50
COMMON
CJ EMITTER
VCE=6V
Typical Junction Capacitance (Note 1)
1000
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
0.4
(mA)
14
40
CAPACITANCE
IC
Ta=100℃
Maximum Average Forward Rectified Current
0.2
100 150
IC
13
30
(pF)
Maximum RMS Voltage
(mA)
VRRM
0.1
Operating Temperature
Range
10
Cob/ Cib —— VCB/ VEB
100 FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
SYMBOL FM120-MH FM130-MH
VBE
Maximum Recurrent Peak Reverse Voltage
1
COLLECTOR CURRENT
12
20
10
Maximum DC Blocking
Voltage
0.01
0.1
COLLECTOR POWER DISSIPATION
PC (mW)
β=10
Ratings at 25℃
ambient temperature unless otherwise specified.
0.2
0.1
1
10
100 150
Single phase half wave, 60Hz,
resistive of inductive load.
COLLECTOR CURRENT IC (mA)
For capacitive load, derate current by 20%
2- Thermal Resistance From Junction to Ambient
VCE=12V
0.70
0.9
0.85
0.92
0.5
200
V
m
10
150
100
50
Ta=25℃
10
0
1
10
COLLECTOR CURRENT
2012-06
2012-
50
IC
(mA)
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
SOT-323
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM120-M+
THRU
2SC4081xT1
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOT-323
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
.054(1.35)
.045(1.15)
.087(2.20)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H .070(1.80)
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.004(0.10)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.096(2.45)
.078(2.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
.056(1.40)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
.047(1.20)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
VRRM
14
40
.010(0.25)
18
10
80
100
.003(0.08)
15
50
16
60
115
150
120
200
V
VRMS
14
21
28
35
42
56
70
105
140
VDC
20
30
40
50
60
80
100
150
200
V
IO
IFSM
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature
Range
13
30
V
RΘJA
Typical Thermal Resistance (Note 2)
12
20
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
TSTG
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
.016(0.40)
.008(0.20)
1- Measured at 1 MHZ and applied reverse voltage
of 4.0 VDC.
NOTES:
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
2- Thermal Resistance From Junction to Ambient
0.50
0.70
.043(1.10)
.032(0.80)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.85
0.9
0.92
0.5
10
V
m
Dimensions in inches and (millimeters)
2012-06
2012-
Rev.C CORP
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
SOT-323
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
SOD-123+
FM120-M+
THRU
2SC4081xT1
FM1200-M+
Pb Free Product
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing • High current capability, low forward voltage drop.
(2)
(1)
capability.T1 G ‐WS • High surge
2SC4081 x
Tape&Reel: 3 Kpcs/Reel Guardring for overvoltage protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
epitaxial planar chip, FE metal
silicon junction.
• Silicon
(2) CLASSIFICATION OF h
RANK • Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage
V
VRRM
V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. V
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
A
MaximumWILLAS does not assume any liability arising out of the application or Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
A
superimposed
on rated load (JEDEC method)
℃
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, P
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TJ
- 65 to +175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
or indirectly cause injury or threaten a life without expressed written approval V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
m
10
@T A=125℃
Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage
NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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