BC817 40WT1(SOT 323)

WILLAS
FM120-M+
THRU
BC817-40WT1
Purpose
FM1200-M+
1.0AGeneral
SURFACE MOUNT
SCHOTTKYTransistors
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
board space.
NPN
Silicon
power
loss,
efficiency.
• Low
declare
that
the high
material
of product compliance with RoHS requirements.
• We
0.146(3.7)
0.130(3.3)
capability, low forward voltage drop.
• High current
Pb-Free
package
is available
• High surge capability.
RoHS product for packing code suffix ”G”
• Guardring for overvoltage protection.
Halogen
free product
for packing code suffix “H”
switching.
• Ultra high-speed
Moisture
Sensitivity
Level
chip,1metal silicon junction.
• Silicon epitaxial planar
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental standards of
MIL-STD-19500
/228
MAXIMUM
RATINGS
Rating
Symbol
Halogen free
product for packing code
suffix "H"
Mechanical
Collector–Emitterdata
Voltage
V CEO
Value
Unit
45
V
: UL94-V0 Voltage
rated flame retardant
• Epoxy
Collector–Base
V CBO
50
: Molded plastic, SOD-123H
• Case
5.0
Emitter–Base Voltage
V EBO
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Collector Current — Continuous
Method 2026
IC
500
• Polarity : Indicated by cathode band
• Mounting Position : Any
THERMAL CHARACTERISTICS
• Weight : Approximated 0.011 gram
SOT–323
0.040(1.0)
3 0.024(0.6)
COLLECTOR
V
0.031(0.8) Typ.
V
0.031(0.8) Typ.
ry
• RoHS product for packing code suffix "G"
1
BASE
mAdc
im
ina
Dimensions in inches and (millimeters)
Characteristic
Symbol
Max
2
EMITTER
Unit
MAXIMUM
RATINGS
AND ELECTRICAL
Total
Device Dissipation
FR– 5 Board,
(1)
P DCHARACTERISTICS
225
1.8
mW
mW/°C
556
°C/W
Total Device
Dissipation
P D FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH
RATINGS
Alumina
Substrate,
(2)
T
300
A = 25°C
Marking Code
12
13
14
15mW 16
18
10
115
120
DeratePeak
above
25°C Voltage
2.4
mW/°C 60
20
30
40
50
80
100
150
200
Maximum Recurrent
Reverse
Volts
VRRM
Thermal Resistance, Junction to Ambient
R θJA
417
°C/W
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Junction and Storage Temperature
T J , T stg
–55 to +150
°C
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Pr
el
TA =ambient
Ratings at 25℃
25°C temperature unless otherwise specified.
above
25°Cresistive of inductive load.
Single phaseDerate
half wave,
60Hz,
Thermal
Resistance,
R θJA
For capacitive
load, derate
currentJunction
by 20%to Ambient
ELECTRICAL CHARACTERISTICS (TA =IO25°C unless otherwise noted.)
Typ
1.0
30Max
—
40
120
—
Maximum Average Forward Rectified Current
Peak Forward Surge Current Characteristic
8.3 ms single half sine-wave
IFSM
OFF CHARACTERISTICS
Typical Thermal
Resistance (Note 2)
RΘJA
superimposed on rated load (JEDEC method)
Typical Junction
Capacitance (Note
1)
Collector–Emitter
Breakdown
Voltage
CJ
Operating Temperature
Range
(I = –10 mA)
TJ
C
Storage Temperature Range
Collector–Emitter Breakdown Voltage
(VEB = CHARACTERISTICS
0, IC = –10 µA)
Maximum Forward
Voltage at
1.0A DC Voltage
Emitter–Base
Breakdown
E
Collector Cutoff Current
NOTES:
V (BR)CEO-55 to +125 45
Unit
℃/W
PF
V to +150
-55
℃
- 65 to +175
V (BR)CES
VF
@T A=125℃
50
—
℃
—
V
IR
V
(BR)EBO
0.50
5.0
0.70
—
0.5—
0.85
V
0.9
0.92
I CBO
—
—
100
nA
(VCB = 20 V, TA = 150°C)
—
—
5.0
µA
Volts
10
(VCB = 20 V)
2- Thermal Resistance From Junction to Ambient
Amps
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Min
TSTG
Maximum Average
Reverse
(I = –1.0
µA) Current at @T A=25℃
Rated DC Blocking Voltage
Symbol
Amps
mAmp
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BC817-40WT1
THRU
General
Purpose
Transistors
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
ELECTRICAL
(TA = 25°C
unless otherwise noted) (Continued)
better reverseCHARACTERISTICS
leakage current and thermal
resistance.
• Low profile surface mounted application in order to
Characteristic
optimize board space.
• Low power loss, high efficiency.
ON
CHARACTERISTICS
current capability, low forward voltage drop.
• High
surge
capability.
• HighDC
Current
Gain
for overvoltage protection.
• Guardring
(I C= 100 mA, V CE = 1.0 V)
• Ultra high-speed switching.
• Silicon
(I C epitaxial
= 500 mA,planar
V CE = chip,
1.0 V)metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
product for packing
code suffix
"G"
• RoHSCollector–Emitter
Saturation
Voltage
Halogen free product for packing code suffix "H"
(I C = 500 mA, I B = 50 mA)
Symbol
SOD-123H
Min
Typ
Max
0.146(3.7)
0.130(3.3)
Unit
0.012(0.3) Typ.
h FE
250
—
600
40
—
—
0.071(1.8)
0.056(1.4)
V CE(sat)
—
—
0.7
V
V BE(on)
—
—
1.2
0.040(1.0)
0.024(0.6)
Mechanical data
SMALL–SIGNAL CHARACTERISTICS
0.031(0.8) Typ.
V
0.031(0.8) Typ.
Dimensions
in inches
100
— and (millimeters)
—
MHz
im
ina
•
•
•
Method 2026
Current–Gain — Bandwidth Product
Polarity : Indicated by cathode band
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Mounting Position : Any
Output Capacitance
Weight : Approximated 0.011 gram
(V CB = 10 V, f = 1.0 MHz)
ry
Base–Emitter On Voltage
• Epoxy : UL94-V0 rated flame retardant
= 500 mA,
V CE =SOD-123H
1.0 V)
plastic,
• Case( I: CMolded
,
• Terminals :Plated terminals, solderable per MIL-STD-750
fT
C obo
—
10
—
pF
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
Ratings at 25℃ ambient temperature unless otherwise specified.
Device60Hz, resistive
Marking
Single phase half wave,
of inductive load. Shipping
For capacitive
load, derate current by 20%
BC817-40WT1
YM
3000/Tape&Reel
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Pr
el
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BC817-40WT1
General
Purpose
Transistors
FM1200-M+
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
SOT−323
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
.087(2.20)
drop.
• High current capability, low forward voltage
• High surge capability.
.070(1.80)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
ina
ry
Mechanical data
0.146(3.7)
0.130(3.3)
.096(2.45)
.078(2.00)
.054(1.35)
.045(1.15)
.004(0.10)MIN.
SOD-123H
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
.056(1.40)
• Terminals :Plated terminals,
solderable per MIL-STD-750
Method 2026
.047(1.20)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
0.031(0.8) Typ.
Pr
eli
m
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Marking Code
.043(1.10)
.032(0.80)
.004(0.10)MAX.
Ratings at 25℃ ambient
temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum Recurrent Peak Reverse Voltage
.016(0.40)
VRRM
.008(0.20)
12
20
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Maximum RMS Voltage
13
30
14
40
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
16
60
18
80
10
100
115
150
120
200
Volts
21
28
35
42
56
70
105
140
Volts
30
40
50
60
80
100
150
200
Volts
DimensionsIO in inches and (millimeters)
Maximum Average Forward Rectified Current
15
50
1.0
30
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
Volts
WILLAS ELECTRONIC CORP.
mAm
WILLAS
FM120-M+
BC817-40WT1THRU
General Purpose Transistors
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
high efficiency.
• Low power loss,Device PN Packing 0.146(3.7)
0.130(3.3)
voltage drop.
• High current capability, low forward
(1)
BC817‐40WT1 G
‐WS Tape&Reel: 3 Kpcs/Reel capability.
• High surge
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon
epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Method 2026
• Polarity : Indicated
by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
el
im
WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak Reverse Voltage
Volt
VRRM
Volt
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
V
RMS
and do vary in different applications and actual performance may vary over time. Volt
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Am
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
on rated load (JEDEC method)
superimposed
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
life‐saving implant or other applications intended for life‐sustaining or other related -55 to +150
Operating Temperature
Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Volt
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAm
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC Blocking
Voltage
Inc and its subsidiaries harmless against all claims, damages and expenditures. NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS
ELECTRONIC
CORP.
WILLAS
ELECTRONIC
CORP.
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