FM120-M+ MBR1040FCT WILLAS THRU THRU 10.0A SCHOTTKY BARRIER RECTIFIERS -40V- 100V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ITO-220 PACKAGE FM1200-M+ T MBR10100FC Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. Low Power Loss for overvoltage protection. • •Guardring Efficiency high-speed switching. • •UltraHigh epitaxial planar chip, ,metal junction. • •Silicon Low Forward Voltage Highsilicon Current Capability parts meet environmental standards of • •Lead-free High surge capacity 0.146(3.7) 0.130(3.3) ITO-220 Features 0.012(0.3) Typ. .138(3.50) 0.071(1.8) .406(10.30) .118(3.00) 0.056(1.4) .382(9.70) .114(2.90) .098(2.50) /228 •MIL-STD-19500 Pb-Free package is available • RoHS product for packing code suffix "G" RoHS forpacking packing code suffix Halogen freeproduct product for code suffix "H" ”G” Halogen freedata product for packing code suffix “H” Mechanical .642(16.30) Case Material: Molded : UL94-V0 rated flamePlastic. retardantUL Flammability • •Epoxy Classification Rating 94V-0 and MSL Rating 1 • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) .571(14.50) 0.031(0.8) Typ. 0.031(0.8) Typ. Maximum Method Ratings 2026 .171(4.35) Operating Junction Temperature: -50°C to +150°C Dimensions.067(1.70) in inches and (millimeters) .138(3.50) • •Polarity : Indicated by cathode band • Storage Temperature: -50°C to +150°C .039(1.00) • Mounting Position : Any .035(1.00) Device Maximum Maximum • Weight : Approximated 0.011 gram Maximum .022(0.55) Catalog Marking Recurrent RMS DC Number Voltage Blocking MAXIMUM RATINGS ANDPeak ELECTRICAL CHARACTERISTICS MAX.(1.80) Reverse Voltage Ratings at 25℃ ambient temperature unless otherwise specified. .108(2.75) Voltage Single phase half wave, 60Hz, resistive of inductive load. .091(2.30) MBR1040FCT MBR1040FCT 40V 28V 40V For capacitive load, derate current by 20% MBR1045FCT MBR1045FCT 45V 31.5V 45V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS MBR1060FCT MBR1060FCT 60V 42V 60V .189(4.80) Marking Code 12 70V 13 14 15 16 18 .169(4.30) 10 115 120 MBR10100FCT MBR10100FCT 100V 100V Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 80 Maximum RMS Voltage VRMS 14 21 28 35 42 56 Characteristics @ 25°CVUnless Otherwise Maximum Electrical DC Blocking Voltage 20 30 Specified 40 50 DC 60 80 Average Forward Maximum Average Forward Rectified Current IF(AV) Current Peak Forward Peak Surge Current 8.3 ms single half sine-wave Forward Surge IFSM superimposedCurrent on rated load (JEDEC method) Maximum Typical Thermal Resistance (Note 2) Instantaneous Typical Junction Capacitance (Note 1) Forward Range Voltage Operating Temperature 1045FCT-1045FCT VF Storage Temperature Range 1060FCT 10100FCT CHARACTERISTICS IO 10 A IFSM120A RΘJA CJ TJ .70V TSTG .75V .85V Maximum DC Maximum Average Reverse CurrentAt at @T A=25℃ Reverse Current Rated DC Blocking RatedVoltage DC Blocking NOTES: @T A=125℃ Voltage 150 .134(3.40) 70 .110(2.54) 105 100 150 200 Volts 140 Volts 200 Volts 1.0 30 8.3ms, half sine 40 120 to +125 TJ =-5525°C IFM = 5A; - 65 to +175 Amps Amps ℃/W PF -55 to +150 .114(2.90) .098(2.50) ℃ ℃ FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH .560(14.22) VF Maximum Forward Voltage at 1.0A DC TC = 100°C 100 IR 0.50 IR 0.1mA 50mA TC = 25°C TC = 100°C 0.70 0.85 .492(12.50) 0.5 10 0.9 0.92 Volts .031(0.80) .015(0.38) mAmps 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 Dimensions in inches and (millimeters) WILLAS CORP. WILLASELECTRONIC ELECTRONIC CORP. FM120-M+ MBR1040FCT WILLAS THRU THRU 10.0A SCHOTTKY BARRIER RECTIFIERS -40V- 100V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ITO-220 PACKAGE FM1200-M+ T MBR10100FC Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) 0.130(3.3) INSTANTANEOUS FORWARD CURRENT AMPERES • AVERAGE FORWARD CURRENT, AMPERES • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 10 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 8 RoHS product for packing code suffix "G" Halogen 6free product for packing code suffix "H" Mechanical data 4 • Epoxy : UL94-V0 rated flame retardant 2 plastic, SOD-123H • Case : Molded , 0 :Plated terminals, solderable per MIL-STD-750 • Terminals 0 50 100 Method 2026 0.012(0.3) Typ. 40 0.071(1.8) 20 40.0.056(1.4) 45V 10 8 6 4 60V 100V 2 1.0 .8 . .6 .4 0.040(1.0) 0.024(0.6) T J = 25 PULSE WIDTH = 200 s .2 0.031(0.8) Typ. 0.031(0.8) Typ. .1 .4 150 .5 .6 .7 .8 9 1.0 1.1 INSTANTANEOUS FORWARD CHARACTERISTIC Dimensions in inches and (millimeters) TEMPERATURE, • Polarity : IndicatedCASE by cathode band • Mounting Position : Any Fig. 1-FORWARD CURRENT DERATING CURVE • Weight : Approximated 0.011 gram Fig. 2-TYPICAL INSTNATANEOUS FORWARD CHARACTERISTIC PEAK FORWARD SURGE CURRENT, AMPERES MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 150 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive130 load. For capacitive load, derate current by 20% 110 RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 90 Typical Thermal Resistance (Note 2) 12 20 13 30 14 40 16 60 18 80 10 100 115 150 120 200 Volts VRMS 14 21 28WAVE JEDEC 35 METHOD42 56 70 105 140 Volts VDC 20 30 40 80 100 150 200 Volts 50 1 RΘJA Operating Temperature Range TJ Fig. 60 1.0 30 2 TSTG 3-MAXIMUM CHARACTERISTICS Amps Amps 5 10 20 50 100 40 120 NO. OF CYCLES AT 60Hz -55 to +125 ℃/W PF -55 to +150 NON-REPETITIVE SURGE ℃ - 65 to +175 CURRENT ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 50 10 CJ 8.3ms SINGLE HALF SINE IO 20 IFSM Typical Junction Capacitance (Note 1) Storage Temperature Range 15 50 30 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 70 VRRM @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS CORP. WILLASELECTRONIC ELECTRONIC CORP.