1N4448W(SOD 123)

WILLAS
FM120-M+
1N4448WTHRU
FM1200-M+
SOD-123
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FAST SWITCHING DIODE
Package outline
Features
• Batch process design, excellent power dissipation offers
FEATURES
better reverse leakage current and thermal resistance.
z
Fast Switching Speed
• Low profile surface mounted application in order to
optimize
boardPackage
space.
z
Surface
Mount
Ideally Suited for Automatic Insertion
• Low power loss, high efficiency.
z
For General Purpose Switching Applications
• High current capability, low forward voltage drop.
z
High
Conductance
surge capability.
• High
Guardring
for overvoltage
protection.
•
z
Pb-Free package
is available
• Ultra high-speed switching.
RoHS
product for packing code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Halogen
free parts
product
packing code
suffix of
“H”
meetfor
environmental
standards
• Lead-free
z
z
Pb Free Product
SOD-123
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500
/228
Moisture
Sensitivity
Level 1
product
fordenotes
packing cathode
code suffix
"G"
• RoHSColor
Polarity:
band
end
Halogen free product for packing code suffix "H"
MARKING: T5 & A3
Mechanical data
0.040(1.0)
0.024(0.6)
: UL94-V0
rated
flame retardant
• Epoxy
Maximum
Ratings
and
Electrical
Characteristics, Single Diode @Ta=25℃
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
Parameter
Limit
• Terminals
:Plated terminals, solderableSymbol
per MIL-STD-750
0.031(0.8) Typ.
Unit
Method 2026
Non-Repetitive Peak Reverse Voltage
VRM
• Polarity : Indicated by cathode band
Peak Repetitive
Reverse
Position
: Any Voltage
• MountingPeak
Working
Peak
Reverse
Voltage
• Weight : Approximated 0.011 gram
100
V
75
V
Dimensions in inches and (millimeters)
VRRM
VRWM
DC Blocking Voltage
VR
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
VR(RMS)
RMS
Reverse Voltage
Ratings at 25℃ ambient temperature unless otherwise
specified.
53
V
Single phase
half wave, 60Hz,
resistive of inductive load.
IFM
Forward
Continuous
Current
500
mA
Average Rectified Output Current
250
mA
For capacitive load, derate current by 20%
Peak Forward
Marking
Code
IO
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Surge Current @t=1.0μs
IFSM
12
20
13
30
14
40
4.0
15
VRRM
16
60
18
80
10
100
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
Maximum Recurrent Peak Reverse Voltage
@t =1.0s
Power Dissipation
Pd
ThermalAverage
Resistance
Junction
to
Maximum
Forward
Rectified Current
Ambient
Typical Thermal Resistance (Note 2)
Typical Junction
Capacitance
(Note 1)
Electrical
Ratings
@Ta=25℃
Operating Temperature Range
Parameter
Storage Temperature
Range
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
TSTG/Tj
-55~+150
RΘJA
-55 to +125
TJ
VF
VF1
IR
40
120
CJ
VSYMBOL
(BR)R
1.0
30
250
Min
Typ
Unit
0.62
0.50
0.72
0.70
V
0.85
0.5
10
IF=5mA
IF=100mA
VF4
1.25
V
IF=150mA
IR1
2.5
μA
VR=75V
IR2
25
nA
VR=20V
Capacitance Between Terminals
CT
4
pF
VR=0V,f=1MHz
Reverse Recovery Time
trr
4
ns
Reverse Current
2012-06
2012-1
150
200
Vol
Am
Am
℃
℃/W
PF
℃
℃
75 FM130-MH FM140-MH FM150-MH
V FM160-MH FM180-MH
IR=10μA
FM120-MH
FM1100-MH FM1150-MH FM1200-MH UN
V
2- Thermal Resistance From Junction to Ambient
Vol
- 65 to +175 Conditions
1.0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
140
VF3
Forward Voltage
Vol
105
℃/W
V
NOTES:
120
200
mW
0.855
@T A=125℃
115
150
-55 to +150
Max
A
VF2
Rated DC Blocking Voltage
IO
IFSM
TSTG
Symbol
Reverse Breakdown
Voltage
CHARACTERISTICS
500
RθJA
Peak Forward Surge Current 8.3 ms single half sine-wave
Storage/Operating
and
Junction
Temperature
superimposed on rated
load
(JEDEC method)
50
1.5
0.9
0.92
Vol
IF=10mA
mAm
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
WILLAS
ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
1N4448WTHRU
FM1200-M+
SOD-123 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Typical Characteristics
SOD-123H
• Low profile surface mounted application in order to
/228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
3
Mechanical data
(nA)
Method 2026
0.4
0.8
•
: Indicated
by cathode
band
FORWARD
VOLTAGE
VF
• Mounting Position : Any
• Weight : Approximated 0.011 gram
1.2
0.146(3.7)
Characteristics
0.130(3.3)
0.012(0.3) Typ.
3000
• 1Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
0.3
• Terminals :Plated terminals, solderable per MIL-STD-750
0.1
0.0
Polarity
Reverse
10000
REVERSE CURRENT IR
•
T=
a 10
0℃
10MIL-STD-19500
T =2
a
5℃
FORWARD CURRENT
IF
(mA)
optimize board space.
Characteristics
loss, high efficiency.
• Low powerForward
300
• High current capability, low forward voltage drop.
• High surge capability.
100
• Guardring for overvoltage protection.
• Ultra high-speed switching.
30
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.071(1.8)
0.056(1.4)
300
100
Ta=25℃
30
0.040(1.0)
0.024(0.6)
10
0.031(0.8) Typ.
0.031(0.8) Typ.
3
1
1.6
Ta=100℃
1000
0
20 Dimensions
40 in inches60
80
and (millimeters)
(V)
REVERSE VOLTAGE
VR
100
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
f=1MHz
RATINGS
1.4
SYMBOL FM120-MH FM130-MH
500FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VRRM
12
20
Maximum
1.2RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage 0.6
Temperature
Range
0
4
8
TSTG
16
12
REVERSE VOLTAGE
CHARACTERISTICS
VR
300
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
28
35
42
56
70
105
140
Vo
40
50
60
80
100
150
200
Vo
1.0
30
200
-55 to +125
20
0
Am
40
120
100
0
Am
P
-55 to +150
25
℃
- 65 to 75
+175
50
100
AMBIENT TEMPERATURE
125
T
℃
℃
150
(℃)
a
FM1150-MH FM1200-MH UN
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
400
(V)
VF
Maximum Forward Voltage at 1.0A DC
30
RΘJA
0.8
Typical Thermal
Resistance (Note 2)
13
30
POWER DISSIPATION
Maximum Recurrent Peak Reverse Voltage
PD
Marking Code
Power Derating Curve
600
(mW)
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ratings at 25℃ ambient temperature unless otherwise specified.
Capacitance Characteristics
Single 1.6
phase half wave, 60Hz, resistive of inductive load.
Ta=25℃
For capacitive load, derate current by 20%
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
1N4448WTHRU
FM1200-M+
SOD-123 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOD-123H
SOD-123
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data.154(3.90)
.018(0.45)
.039(1.00)
.130(3.30)
.114(2.90)
.098(2.50)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
.071(1.80)
.055(1.40)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
.053(1.35)
.027(0.70)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
18
80
10
100
115
150
.004(0.1)MAX.
56
70
105
80
100
150
120
200
Vo
140
Vo
200
Vo
1.0
30
.008(0.20)MAX.
-55 to +125
40
120
Am
Am
℃/
P
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
.016(0.40)MIN.
I
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.50
0.70
0.85
0.5
R
0.9
0.92
10
.018(0.45)
.010(0.25)
Vo
mA
Dimensions in inches and (millimeters)
2012-06
2012-1
WILLAS ELECTRONIC
Rev.D CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
1N4448W
FM1200-M+
SOD-123 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
space.
Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing • High current capability, low forward voltage drop.
capability. (1)G(2)‐WS • High surge
1N4448W‐T
Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
Packing code, Tape&Reel Packing
switching.
• Ultra high-speed
epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical
data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak
Reverse
Voltage
Volt
V
RRM
which may be included on WILLAS data sheets and/ or specifications can Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Amp
Maximum Average
Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature
Range
T
J
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
or indirectly cause injury or threaten a life without expressed written approval Volt
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average
Reverse Current at @T A=25℃
IR
mAm
10
@T A=125℃
Rated DC Blocking
Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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