WILLAS FM120-M+ 1N4448WTHRU FM1200-M+ SOD-123 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FAST SWITCHING DIODE Package outline Features • Batch process design, excellent power dissipation offers FEATURES better reverse leakage current and thermal resistance. z Fast Switching Speed • Low profile surface mounted application in order to optimize boardPackage space. z Surface Mount Ideally Suited for Automatic Insertion • Low power loss, high efficiency. z For General Purpose Switching Applications • High current capability, low forward voltage drop. z High Conductance surge capability. • High Guardring for overvoltage protection. • z Pb-Free package is available • Ultra high-speed switching. RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free parts product packing code suffix of “H” meetfor environmental standards • Lead-free z z Pb Free Product SOD-123 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Moisture Sensitivity Level 1 product fordenotes packing cathode code suffix "G" • RoHSColor Polarity: band end Halogen free product for packing code suffix "H" MARKING: T5 & A3 Mechanical data 0.040(1.0) 0.024(0.6) : UL94-V0 rated flame retardant • Epoxy Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , Parameter Limit • Terminals :Plated terminals, solderableSymbol per MIL-STD-750 0.031(0.8) Typ. Unit Method 2026 Non-Repetitive Peak Reverse Voltage VRM • Polarity : Indicated by cathode band Peak Repetitive Reverse Position : Any Voltage • MountingPeak Working Peak Reverse Voltage • Weight : Approximated 0.011 gram 100 V 75 V Dimensions in inches and (millimeters) VRRM VRWM DC Blocking Voltage VR MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS VR(RMS) RMS Reverse Voltage Ratings at 25℃ ambient temperature unless otherwise specified. 53 V Single phase half wave, 60Hz, resistive of inductive load. IFM Forward Continuous Current 500 mA Average Rectified Output Current 250 mA For capacitive load, derate current by 20% Peak Forward Marking Code IO RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Surge Current @t=1.0μs IFSM 12 20 13 30 14 40 4.0 15 VRRM 16 60 18 80 10 100 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 Maximum Recurrent Peak Reverse Voltage @t =1.0s Power Dissipation Pd ThermalAverage Resistance Junction to Maximum Forward Rectified Current Ambient Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Electrical Ratings @Ta=25℃ Operating Temperature Range Parameter Storage Temperature Range Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ TSTG/Tj -55~+150 RΘJA -55 to +125 TJ VF VF1 IR 40 120 CJ VSYMBOL (BR)R 1.0 30 250 Min Typ Unit 0.62 0.50 0.72 0.70 V 0.85 0.5 10 IF=5mA IF=100mA VF4 1.25 V IF=150mA IR1 2.5 μA VR=75V IR2 25 nA VR=20V Capacitance Between Terminals CT 4 pF VR=0V,f=1MHz Reverse Recovery Time trr 4 ns Reverse Current 2012-06 2012-1 150 200 Vol Am Am ℃ ℃/W PF ℃ ℃ 75 FM130-MH FM140-MH FM150-MH V FM160-MH FM180-MH IR=10μA FM120-MH FM1100-MH FM1150-MH FM1200-MH UN V 2- Thermal Resistance From Junction to Ambient Vol - 65 to +175 Conditions 1.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 140 VF3 Forward Voltage Vol 105 ℃/W V NOTES: 120 200 mW 0.855 @T A=125℃ 115 150 -55 to +150 Max A VF2 Rated DC Blocking Voltage IO IFSM TSTG Symbol Reverse Breakdown Voltage CHARACTERISTICS 500 RθJA Peak Forward Surge Current 8.3 ms single half sine-wave Storage/Operating and Junction Temperature superimposed on rated load (JEDEC method) 50 1.5 0.9 0.92 Vol IF=10mA mAm IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 1N4448WTHRU FM1200-M+ SOD-123 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Typical Characteristics SOD-123H • Low profile surface mounted application in order to /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 3 Mechanical data (nA) Method 2026 0.4 0.8 • : Indicated by cathode band FORWARD VOLTAGE VF • Mounting Position : Any • Weight : Approximated 0.011 gram 1.2 0.146(3.7) Characteristics 0.130(3.3) 0.012(0.3) Typ. 3000 • 1Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , 0.3 • Terminals :Plated terminals, solderable per MIL-STD-750 0.1 0.0 Polarity Reverse 10000 REVERSE CURRENT IR • T= a 10 0℃ 10MIL-STD-19500 T =2 a 5℃ FORWARD CURRENT IF (mA) optimize board space. Characteristics loss, high efficiency. • Low powerForward 300 • High current capability, low forward voltage drop. • High surge capability. 100 • Guardring for overvoltage protection. • Ultra high-speed switching. 30 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.071(1.8) 0.056(1.4) 300 100 Ta=25℃ 30 0.040(1.0) 0.024(0.6) 10 0.031(0.8) Typ. 0.031(0.8) Typ. 3 1 1.6 Ta=100℃ 1000 0 20 Dimensions 40 in inches60 80 and (millimeters) (V) REVERSE VOLTAGE VR 100 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS f=1MHz RATINGS 1.4 SYMBOL FM120-MH FM130-MH 500FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VRRM 12 20 Maximum 1.2RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage 0.6 Temperature Range 0 4 8 TSTG 16 12 REVERSE VOLTAGE CHARACTERISTICS VR 300 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 1.0 30 200 -55 to +125 20 0 Am 40 120 100 0 Am P -55 to +150 25 ℃ - 65 to 75 +175 50 100 AMBIENT TEMPERATURE 125 T ℃ ℃ 150 (℃) a FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 400 (V) VF Maximum Forward Voltage at 1.0A DC 30 RΘJA 0.8 Typical Thermal Resistance (Note 2) 13 30 POWER DISSIPATION Maximum Recurrent Peak Reverse Voltage PD Marking Code Power Derating Curve 600 (mW) CAPACITANCE BETWEEN TERMINALS CT (pF) Ratings at 25℃ ambient temperature unless otherwise specified. Capacitance Characteristics Single 1.6 phase half wave, 60Hz, resistive of inductive load. Ta=25℃ For capacitive load, derate current by 20% @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 1N4448WTHRU FM1200-M+ SOD-123 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOD-123H SOD-123 • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data.154(3.90) .018(0.45) .039(1.00) .130(3.30) .114(2.90) .098(2.50) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) .071(1.80) .055(1.40) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. .053(1.35) .027(0.70) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 Maximum RMS Voltage VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 18 80 10 100 115 150 .004(0.1)MAX. 56 70 105 80 100 150 120 200 Vo 140 Vo 200 Vo 1.0 30 .008(0.20)MAX. -55 to +125 40 120 Am Am ℃/ P -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC .016(0.40)MIN. I Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.50 0.70 0.85 0.5 R 0.9 0.92 10 .018(0.45) .010(0.25) Vo mA Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.D CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 1N4448W FM1200-M+ SOD-123 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. Ordering Information: 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) Device PN Packing • High current capability, low forward voltage drop. capability. (1)G(2)‐WS • High surge 1N4448W‐T Tape&Reel: 3 Kpcs/Reel • Guardring for overvoltage protection. Note: (1) Packing code, Tape&Reel Packing switching. • Ultra high-speed epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volt V RRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Amp Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amp superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volt 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.