BAV19W thru BAV21W(SOD-123)

BAV19W~ BAV21W
SOD-123 Plastic-Encapsulate Diodes
SOD-123
FAST SWITCHING DIODE
FEATURES
Moisture Sensitivity Level 1
MARKING: BAV19W: A8
BAV20W: T2
BA 2 W T3
BAV21W:
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
BAV19W
BAV20W
BAV21W
Unit
Non-Repetitive Peak Reverse Voltage
VRM
120
200
250
V
Peak Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
100
150
250
V
71
106
141
V
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Forward Continuous Current
IFM
400
mA
Average Rectified Output Current
IO
200
mA
Peak Forward Surge Current @t=1.0ms
@t =1.0s
2.5
IFSM
A
0.5
Repetitive Peak Forward Current
IFRM
625
mA
Power Dissipation
Pd
500
mW
RθJA
250
℃/W
TSTG
-55~+150
℃
Thermal Resistance Junction to
Ambient
Storage Temperature
Electrical Ratings @Ta=25℃
Parameter
Symbol
Forward voltage
Reverse current
Typ
Max
VF1
1.0
VF2
1.25
Unit
IR
BAV21W
0.1
V
IF=0.2A
VR=100V
μA
0.1
VR=150V
VR=200V
Capacitance between terminals
CT
5
pF
Reverse recovery time
trr
50
ns
201.
Conditions
IF=0.1A
0.1
BAV19W
BAV20W
Min
VR=0V,f=1MHz
IF=IR=30mA
Irr=0.1XIR,RL=100Ω
WILLAS ELECTRONIC CORP.
SOD-123 Plastic-Encapsulate Diodes
BAV19W~ BAV21W
100
1000
Tj = 25°C
100
IR, LEAKAGE CURRENT (µA)
IF, INSTANTANEOUS FORWARD CURRENT (mA)
Typical Characteristics
10
1.0
0.1
10
1
0.1
0.01
0.01
0
1
2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
0
100
200
Tj, JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
.019(0.50)
.039(1.00)
.154(3.90)
.130(3.30)
.114(2.90)
.098(2.50)
.071(1.80)
.055(1.40)
SOD-123 PACKAGE OUTLINE DIMENSIONS
.053(1.35)
.027(0.70)
.004(0.1)MAX.
.008(0.20)MAX.
.016(0.40)MIN.
.018(0.45)
.010(0.25)
201.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAV19W~ BAV21W
SOD-123 Plastic-Encapsulate Diodes
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Ordering
Information: • Low profile surface mounted application in order to
SOD-123H
optimize boardDevice PN space.
Packing 0.146(3.7)
• Low power loss, high efficiency.
(1) (2)
0.130(3.3)
Part
Number
‐T
G
‐WS Tape&Reel: 3 Kpcs/Reel • High current capability, low forward voltage drop.
capability.
• High surge
Note: (1)
Packing code, Tape&Reel Packing
• Guardring for overvoltage protection.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” high-speed switching.
• Ultra
• Silicon epitaxial planar chip, metal silicon junction.
parts meet environmental standards of
• Lead-free
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
***Disclaimer*** Method 2026
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
WILLAS reserves the right to make changes without notice to any product • Mounting Position : Any
• specification herein, to make corrections, modifications, enhancements or other Weight : Approximated 0.011 gram
changes. WILLAS or anyone on its behalf assumes no responsibility or liability MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
for any errors or inaccuracies. Data sheet specifications and its information Ratings at
25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
contained are intended to provide a product description only. "Typical" parameters For
capacitive
load, derate current by 20%
which may be included on WILLAS data sheets and/ or specifications can SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
and do vary in different applications and actual performance may vary over time. Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Vo
VRRM
WILLAS does not assume any liability arising out of the application or Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
use of any product or circuit. VDC
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
Am
Maximum Average Forward Rectified Current
IO
1.0
WILLAS products are not designed, intended or authorized for use in medical, Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
superimposed on rated load (JEDEC method)
life‐saving implant or other applications intended for life‐sustaining or other related ℃
40
Typical Thermal Resistance (Note 2)
RΘJA
applications where a failure or malfunction of component or circuitry may directly P
120
Typical Junction
Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
TJ
or indirectly cause injury or threaten a life without expressed written approval - 65 to +175
TSTG
of WILLAS. Customers using or selling WILLAS components for use in CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
such applications do so at their own risk and shall agree to fully indemnify WILLAS 0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
. 0.5
MaximumInc and its subsidiaries harmless against all claims, damages and expenditures
Average Reverse Current at @T A=25℃
Operating Temperature Range
Storage Temperature Range
Rated DC Blocking Voltage
@T A=125℃
IR
10
℃
℃
UN
Vo
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
201.
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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