WILLAS SOT-723 Plastic-Encapsulate Diodes FM120-M+ DAN222M THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. SWITCHING DIODE • Low power loss, high efficiency. • High current capability, low forward voltage drop. FEATURES • High surge capability. z Ultra •Small Surface Mounting Type Guardring for overvoltage protection. z Ultra •High Switching Applications Ultra Speed high-speed switching. Silicon epitaxial planar chip, metal silicon junction. z High •Reliability • Lead-free parts meet environmental standards of z Pb-Free package is available MIL-STD-19500 /228 RoHS product for packingcode code suffix suffix "G" • RoHS product for packing ”G” Halogen free product for packing code suffix "H" Halogen free product for packing code suffix “H” Mechanical data z Moisture Sensitivity Level 1 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H MARKING: N , • Terminals :Plated terminals, solderable per MIL-STD-750 SOT-723 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) ina ry Method 2026 0.031(0.8) Typ. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) • Polarity : Indicated by cathode band Symbol Parameter • Mounting Position : Any • Weight : Approximated 0.011 gram Peak Reverse Voltage VRRM Unit 80 V Working Peak Reverse Voltage 80 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS V Ratings at 25℃ ambient unless otherwise specified. RMStemperature Reverse Voltage VR(RMS) Single phase half wave, 60Hz, resistive of inductive load. IO For capacitive load, Continuous derate currentForward by 20% Current IFM Marking Code RATINGS Peak Forward Current 56 V 100 mA FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH mA 300 FM160-MH FM180-MH 12 13 14 40 15 504 16 60 18 80 VRMS 14 21 28 42 Maximum DC Blocking Voltage VDC 20 30 40 35 150 56 mW 70 80 100 Maximum Average Forward Rectified Current IO IFSM Non-Repetitive Peak IFSM Recurrent Peak Maximum Reverse Voltage Maximum Power PD RMS Voltage RθJA Dimensions in inches and (millimeters) Pr el Tj ForwardVSurge Current (t=1µs) 20 30 RRM Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Peak Forward Surge Current 8.3 ms single half sine-wave Operating/Storage superimposed (JEDEC method) Tstg on rated load 50 60 833 Operating Temperature Range Parameter Storage Temperature Range Temperature Reverse voltage Symbol TJ TSTG -55~+150 -55 to +125 Test conditions NOTES: Typ Min - 65 to +175 ℃/W 115 150 120 200 Vo 105 140 Vo 150 200 Vo Am ℃ Am ℃ ℃ P -55 to +150 Max 80 0.50 Maximum Average Reverse Current at @T A=25℃ = IFIR 100mA VF Rated DC Blocking Voltage Total capacitance 10 A 100 ℃ Unit ℃ V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN = VVRF 70V Reverse current Maximum Forward Voltage at 1.0A DC IR Forward voltage 40 120 = IR 100uA V(BR) CHARACTERISTICS 1.0 30 150 Typical Thermal Resistance (Note 2) RΘJA ELECTRICAL CHARACTERISTICS(T =25 ℃ unless otherwise specified) a Typical Junction Capacitance (Note 1) CJ @T A=125℃ = = VR 6V,f 1MHz Ctot 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.IF= IR=5mA, VR=6V,RL=50Ω trr Reverse recovery time 0.031(0.8) Typ. Value im VRWM 0.012(0.3) Typ. 0.85 0.1 0.70 0.5 10 µA 0.9 1.2 V 3.5 pF 4 ns 0.92 Vo mA 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DAN222MTHRU FM1200-M+ SOT-723 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing better reverse leakage current and thermal resistance. SOT-723 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" .049(1.25) 0.040(1.0) 0.024(0.6) ry .030(0.75) .034(0.85) • Epoxy : UL94-V0 rated flame retardant .045(1.15) • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .049(1.25) .045(1.15) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data 0.012(0.3) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. 0.031(0.8) Typ. ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code .007(0.17) 15 .003(0.07) 16 18 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN .003(0.8) Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 50 60 10 100 80 115 150 120 200 Volt Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volt Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volt Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ TJ Operating Temperature Range Storage Temperature Range 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: @T A=125℃ .011(0.27) .006(0.15) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient IR 0.50 .034(0.85) .030(0.45) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 0.70 0.85 0.5 0.9 0.92 Volt 10 mAm Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.C CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ DAN222MTHRU FM1200-M+ SOT-723 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) • High current capability, low forward voltage drop. • High surge capability. Device PN Packing • Guardring for overvoltage(1)protection. (2) DAN222M ‐T Tape&Reel: 8 Kpcs/Reel switching. G ‐WS • Ultra high-speed Silicon epitaxial planar chip, metal silicon junction. •Note: (1) Packing code, Tape&Reel Packing • Lead-free parts meet environmental standards of (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram ina ry 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im Ratings at 25℃ ambient temperature unless otherwise specified. WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% Pr el changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM contained are intended to provide a product description only. "Typical" parameters Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DCwhich may be included on WILLAS data sheets and/ or specifications can Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amps Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method) ℃/W use of any product or circuit. 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG ℃ life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 applications where a failure or malfunction of component or circuitry may directly 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp or indirectly cause injury or threaten a life without expressed written approval 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient . Inc and its subsidiaries harmless against all claims, damages and expenditures Marking Code 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.