DAN222M(SOT 723)

WILLAS
SOT-723 Plastic-Encapsulate Diodes
FM120-M+
DAN222M THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize
board space.
SWITCHING
DIODE
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
FEATURES
• High surge capability.
z Ultra •Small
Surface Mounting Type
Guardring for overvoltage protection.
z Ultra •High
Switching
Applications
Ultra Speed
high-speed
switching.
Silicon epitaxial planar chip, metal silicon junction.
z High •Reliability
• Lead-free parts meet environmental standards of
z Pb-Free
package is available
MIL-STD-19500
/228
RoHS
product
for packingcode
code suffix
suffix "G"
•
RoHS product
for packing
”G”
Halogen free product for packing code suffix "H"
Halogen free product for packing code suffix “H”
Mechanical data
z Moisture Sensitivity Level 1
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
MARKING: N
,
• Terminals :Plated terminals, solderable per MIL-STD-750
SOT-723 0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
ina
ry
Method 2026
0.031(0.8) Typ.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
• Polarity : Indicated by cathode band
Symbol
Parameter
• Mounting Position : Any
• Weight : Approximated
0.011
gram
Peak Reverse
Voltage
VRRM
Unit
80
V
Working Peak
Reverse
Voltage
80
MAXIMUM
RATINGS
AND
ELECTRICAL CHARACTERISTICS
V
Ratings
at 25℃ ambient
unless otherwise specified.
RMStemperature
Reverse Voltage
VR(RMS)
Single phase half wave, 60Hz, resistive of inductive load.
IO
For capacitive
load, Continuous
derate currentForward
by 20% Current
IFM
Marking Code
RATINGS
Peak
Forward Current
56
V
100
mA
FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
mA
300 FM160-MH FM180-MH
12
13
14
40
15
504
16
60
18
80
VRMS
14
21
28
42
Maximum DC Blocking Voltage
VDC
20
30
40
35
150
56 mW 70
80
100
Maximum Average Forward Rectified Current
IO
IFSM
Non-Repetitive
Peak
IFSM Recurrent Peak
Maximum
Reverse Voltage
Maximum
Power
PD RMS Voltage
RθJA
Dimensions in inches and (millimeters)
Pr
el
Tj
ForwardVSurge
Current
(t=1µs)
20
30
RRM
Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
Operating/Storage
superimposed
(JEDEC method)
Tstg on rated load
50
60
833
Operating Temperature Range
Parameter
Storage Temperature Range
Temperature
Reverse
voltage
Symbol
TJ
TSTG
-55~+150
-55 to +125
Test conditions
NOTES:
Typ
Min
- 65 to +175
℃/W
115
150
120
200
Vo
105
140
Vo
150
200
Vo
Am
℃
Am
℃
℃
P
-55 to +150
Max
80
0.50
Maximum Average Reverse Current at @T A=25℃
=
IFIR 100mA
VF
Rated DC Blocking Voltage
Total
capacitance
10
A 100
℃
Unit
℃
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
=
VVRF 70V
Reverse
current
Maximum
Forward Voltage
at 1.0A DC IR
Forward voltage
40
120
=
IR 100uA
V(BR)
CHARACTERISTICS
1.0
30
150
Typical Thermal Resistance (Note 2)
RΘJA
ELECTRICAL
CHARACTERISTICS(T
=25
℃
unless
otherwise
specified)
a
Typical Junction Capacitance (Note 1)
CJ
@T A=125℃
=
=
VR 6V,f 1MHz
Ctot
1- Measured
at 1 MHZ
and applied reverse voltage
of 4.0 VDC.IF= IR=5mA, VR=6V,RL=50Ω
trr
Reverse
recovery
time
0.031(0.8) Typ.
Value
im
VRWM
0.012(0.3) Typ.
0.85 0.1
0.70
0.5
10
µA
0.9
1.2
V
3.5
pF
4
ns
0.92
Vo
mA
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DAN222MTHRU
FM1200-M+
SOT-723 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
better reverse leakage current and thermal resistance.
SOT-723
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
.049(1.25)
0.040(1.0)
0.024(0.6)
ry
.030(0.75)
.034(0.85)
• Epoxy : UL94-V0 rated flame retardant
.045(1.15)
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.049(1.25)
.045(1.15)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Mechanical data
0.012(0.3) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
ina
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Pr
eli
m
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
.007(0.17)
15 .003(0.07)
16
18
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
.003(0.8)
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
50
60
10
100
80
115
150
120
200
Volt
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volt
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volt
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
TJ
Operating Temperature Range
Storage Temperature Range
1.0
30
40
120
-55 to +125
Am
Am
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
@T A=125℃
.011(0.27)
.006(0.15)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
IR
0.50
.034(0.85)
.030(0.45)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.70
0.85
0.5
0.9
0.92
Volt
10
mAm
Dimensions in inches and (millimeters)
2012-06
2012-1
Rev.C CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DAN222MTHRU
FM1200-M+
SOT-723 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
• High current capability, low forward voltage drop.
• High surge capability.
Device PN Packing • Guardring for overvoltage(1)protection.
(2)
DAN222M ‐T
Tape&Reel: 8 Kpcs/Reel switching. G ‐WS • Ultra high-speed
Silicon epitaxial
planar chip, metal silicon junction.
•Note: (1)
Packing code, Tape&Reel Packing
• Lead-free parts meet environmental standards of
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
ina
ry
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer***
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
im
Ratings at 25℃ ambient
temperature unless otherwise specified.
WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive
load, derate current by 20%
Pr
el
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
contained are intended to provide a product description only. "Typical" parameters Volts
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
VRMS
Volts
Maximum DCwhich may be included on WILLAS data sheets and/ or specifications can Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Amps
Maximum Average Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method)
℃/W
use of any product or circuit. 40
Typical Thermal
Resistance (Note 2)
RΘJA
PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature Range
TJ
℃
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature
Range
TSTG
℃
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Volts
0.9
Maximum Forward
Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
applications where a failure or malfunction of component or circuitry may directly 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmp
or indirectly cause injury or threaten a life without expressed written approval 10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at
1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance
From Junction to Ambient
. Inc and its subsidiaries harmless against all claims, damages and expenditures
Marking Code
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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