WILLAS SOT-523 Plastic-Encapsulate Diodes FM120-M+ MMBD4448HTx THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE SWITCHING DIODE Package outline SOT-523 Features FEATURES • Batch process design, excellent power dissipation offers z Fast Switching Speed better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to • z For General Purpose Switching Applications optimize board space. 0.146(3.7) power loss, high efficiency. z High• Low Conductance 0.130(3.3) z z Pb Free Product 0.012(0.3) Typ. current capability, low forward voltage drop. • Highpackage Pb-Free is available • High surge capability. RoHS product for packing code suffix ”G” • Guardring for overvoltage protection. Halogen productswitching. for packing code suffix “H” high-speed • Ultrafree epitaxial planar • Silicon Moisture Sensitivity Levelchip, 1 metal silicon junction. • Lead-free parts meet environmental standards of 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.031(0.8) Typ. 0.031(0.8) Typ. in inches and (millimeters) • Polarity : Indicated by cathode Characteristics, band ℃ Maximum Ratings and Electrical Single Diode @Ta=25Dimensions Position : Any • Mounting Parameter Symbol Limit Unit • Weight : Approximated 0.011 gram 100 V VRM Non-Repetitive Peak Reverse Voltage im VRRM Peak RepetitiveMAXIMUM Peak Reverse Voltage AND ELECTRICAL RATINGS CHARACTERISTICS VRWM Working Peak Voltage Ratings at 25℃Reverse ambient temperature unless otherwise specified. 80 V Single phase half wave, 60Hz, resistive of inductive load. VR DC Blocking Voltage For capacitive load, derate current by 20% 57 V VR(RMS) RMS Reverse Voltage RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Pr el IFM Forward Continuous Current Marking Code MaximumRectified Recurrent Peak Reverse Voltage Average Output Current IO VRRM 12 20 Maximum RMS Voltage Peak Forward Surge Current @t=1.0μs Maximum DC Blocking Voltage VRMS 14 21 28 20 30 40 Maximum Average Forward Rectified Current Thermal Resistance Junction to Ambient IO PD FSM IR θJA Storage Temperature Typical Thermal Resistance (Note 2) STG RΘJA VIFSM DC @t =1.0s Power Dissipation Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) Electrical Ratings @Ta=25℃ Operating Temperature Range CJ CHARACTERISTICS Reverse breakdown voltage Maximum Forward Voltage at 1.0A DC mA 15 50 250 16 60 18 80 10 115 100 mA 150 120 200 V 4.035 42 56 70 105 140 V 60 80 100 150 200 V 50 1.5 1.0 30 833 Symbol 500 150 TSTG Parameter 14 40 T -55 ~+150 -55 to +125 TJ Storage Temperature Range 13 30 A 40 120 Min Typ Max Unit Conditions FM120-MH SYMBOL 80 FM130-MH FM140-MH FM150-MH V FM160-MH FM180-MH V =2.5μA FM1150-MH FM1200-MH U I FM1100-MH R VF R 0.70 0.85 V IF=100mA VF4 1.25 V IF=150mA IR1 0.1 μA VR= 70V IR2 25 nA VR=20V Capacitance between terminals CT 3.5 pF VR=6V,f=1MHz Reverse recovery time trr 4 ns VR=6V,IF=5mA VF1 @T A=125℃ VF2 VF3 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Reverse current 2012-06 2012-1 IR 0.62 0.50 1.0 voltage ℃ - 65 to +175 V NOTES: ℃ -55 to +150 0.855 Forward A V Rated DC Blocking Voltage ℃/W 0.72 Maximum Average Reverse Current at @T A=25℃ A mW 0.5 IF=5mA 10 IF=10mA 0.9 0.92 V m WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4448HTx THRU SOT-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-523 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) ry .035(0.90) .028(0.70) • Epoxy : UL94-V0 rated flame retardant .067(1.70)0.031(0.8) Typ. • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .059(1.50) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .069(1.75) .057(1.45) Halogen free product for packing code suffix "H" Mechanical data .004(0.10)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pr eli m Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code .043(1.10) .035(0.90) Maximum Recurrent Peak Reverse Voltage .014 (0.35 ) .008(0.20) .010(0.25) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U SYMBOL FM120-MH 12 13 14 15 16 .004(0.10) 18 10 115 120 VRRM 20 30 40 50 60 80 100 150 200 V VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average Forward Rectified Current IO IFSM Maximum RMS Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range 1.0 30 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .014(0.35) .006(0.15) @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. .035(0.90) .028(0.70) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.9 0.92 0.5 10 V m 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.D CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4448HTx THRU SOT-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) high efficiency. • Low power loss, Ordering Information: 0.130(3.3) • High current capability, low forward voltage drop. Device PN Packing • High surge capability. (1 ) (2) for overvoltage protection. • Guardring MMBD4448HTx‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • Ultra high-speed switching. Note: (1) Packing code, planar Tape & Reel Packing chip, metal silicon junction. • Silicon epitaxial parts meet environmental standards of • Lead-free (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" free product for packing code suffix "H" Halogen Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ***Disclaimer*** im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half WILLAS reserves the right to make changes without notice to any product wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Pr el specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI RATINGS changes. WILLAS or anyone on its behalf assumes no responsibility or liability Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volt V RRM for any errors or inaccuracies. Data sheet specifications and its information Volt 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS contained are intended to provide a product description only. "Typical" parameters Volt Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can Amp Maximum Average Forward Rectified Current IO 1.0 Peak Forwardand do vary in different applications and actual performance may vary over time. Surge Current 8.3 ms single half sine-wave 30 IFSM Amp superimposedWILLAS does not assume any liability arising out of the application or on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA use of any product or circuit. PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ - 65 to +175 Storage Temperature Range TSTG ℃ WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI life‐saving implant or other applications intended for life‐sustaining or other related Volt 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 applications where a failure or malfunction of component or circuitry may directly 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm 10 @T A=125℃ Rated DC Blocking Voltage or indirectly cause injury or threaten a life without expressed written approval NOTES: of WILLAS. Customers using or selling WILLAS components for use in 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. such applications do so at their own risk and shall agree to fully indemnify WILLAS 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.