BAS21T(SOT 523)

WILLAS
FM120-M+
BAS21T THRU
FM1200-M+
SOT-523
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
SWITCHING
DIODE
• Batch process design, excellent power dissipation offers
FEATURES
better reverse leakage current and thermal resistance.
Low profile Speed
surface mounted application in order to
z
Fast•Switching
optimize board space.
z
For General
Purpose
Switching
loss, high
efficiency.Applications
• Low power
High current capability, low forward voltage drop.
z
High•Conductance
• High surge capability.
z
Pb-Free
package is available
• Guardring for overvoltage protection.
RoHS
product
for packing
code suffix ”G”
high-speed
switching.
• Ultra
Silicon
epitaxial
planar
chip,
metal
silicon
junction.
•
Halogen free product for packing
code
suffix
“H”
• Lead-free parts meet environmental standards of
z
Moisture
Sensitivity
Level
1
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
SOT-523
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1
0.071(1.8)
0.056(1.4)
3
2
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy
MARKING
:T3 : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
2026
Maximum RatingsMethod
@Ta=25℃
• Polarity : Indicated by cathode band
Parameter
• Mounting Position : Any
Peak Repetitive
Reverse 0.011
Voltage
• Weight :Peak
Approximated
gram
0.031(0.8) Typ.
ina
ry
0.031(0.8) Typ.
Unit
VRRM
Working Peak Reverse Voltage
VRWM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DC Blocking Voltage
VR
250
V
Ratings at
25℃ ambient
temperature unless otherwise specified.
Forward
Continuous
Current
IFM
400
mA
IO
200
mA
im
Limit
Single phase half wave, 60Hz, resistive of inductive load.
Average
Rectified Output Current
For capacitive load, derate current by 20%
Non-Repetitive PeakRATINGS
Forward Surge Current SYMBOL
Marking Code
2.5 FM180-MH FM1100-MH FM1150-MH FM1200-MH U
@ t = FM130-MH
1.0µs FM140-MH FM150-MH FM160-MH
FM120-MH
Maximum RMS Voltage
VRMS
14
21
28
VDC
20
30
40 RθJA 50
60 833
TJ
1.0
-55~+150
℃
TSTG
30
-55~+150
℃
Pr
el
VRRM
Maximum Average Forward Rectified Current
Operating Junction Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
Storage Temperature
superimposed on rated load (JEDEC method)
IO
IFSM
PD
15
50
16 0.5
60
18
80
10
100
115
150
120
200
V
35
42
56
70
105
140
V
80
100
℃/W
150
200
V
TJ
Operating Temperature Range
Symbol
TSTG
Parameter
Storage Temperature
Range
CHARACTERISTICS
Reverse breakdown
voltage
Maximum Forward Voltage at 1.0A DC
Forward
NOTES:
Test
-Min
65 to +175
VF
VF
voltage
Reverse recovery time
2012-06
2012-1
conditions
0.50
IR
@T A=125℃
2Thermal
Resistance From Junction to Ambient
Total
capacitance
mW
A
A
℃
-55 to +150
Max
Unit
FM1200-MH U
SYMBOL
IR=FM130-MH
100μA FM140-MH FM150-MH FM160-MH
250 FM180-MH FM1100-MH FM1150-MH
V
V(BR)FM120-MH
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
40
120
-55 to +125
Maximum
Reverse
Current
at @T A=25℃
=
VR
IR
ReverseAverage
voltage
leakage
current
Rated DC Blocking Voltage
150
Typical Thermal Resistance (Note 2)
RΘJA
ELECTRICAL
CHARACTERISTICS
(Ta=25℃
unless
otherwise
specified)
Typical Junction Capacitance (Note 1)
CJ
A
Maximum Recurrent Peak Reverse Voltage
Maximum Resistance
DC Blocking Voltage
Thermal
Junction to Ambient
14
40
IFSM
12@ t = 1.0s
13
20
30
Power Dissipation
Dimensions in inches and (millimeters)
Symbol
200V
IF=100mA
IF=200mA
=
VR 0V,f 1MHz
C=
T
t rr
IF=IR=30mA,Irr=0.1XIR,
RL=100Ω
0.70
0.85
0.5
10
100
1
1.25
0.9
0.92
nA
V
m
V
5
pF
50
ns
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS21T THRU
FM1200-M+
SOT-523
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOT-523
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
Method 2026
.059(1.50)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
ina
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ry
.035(0.90)
.028(0.70)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750.067(1.70)
.069(1.75)
.057(1.45)
Halogen free product for packing code suffix "H"
Mechanical data
.004(0.10)MIN.
• RoHS product for packing code suffix "G"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Pr
eli
m
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
21
VDC
20
30
Maximum DC Blocking Voltage
.043(1.10)
.035(0.90)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
.004(0.10)MAX.
CHARACTERISTICS
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
2- Thermal Resistance From Junction to Ambient
28
35
42
40
50
60
18
10
.008(0.20)
80
100
.004(0.10)
56
70
80
100
115
150
120
200
V
105
140
V
150
200
V
1.0
30
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
IR
.014(0.35)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.006(0.15)
NOTES:
16
60
TSTG
VF
Maximum Forward Voltage at 1.0A DC
15
50
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
.014(0.35)
13
14
.010(0.25)
30
40
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
0.50
0.70
0.85
0.9
0.92
0.5
.035(0.90)
.028(0.70)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
10
V
m
Dimensions in inches and (millimeters)
2012-06
2012-1
WILLAS ELECTRONIC
Rev.D CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAS21TTHRU
FM1200-M+
SOT-523
Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
FeaturesInformation: Ordering
• Batch process design, excellent power dissipation offers
better reverse leakage
current and thermal resistance.
Device PN • Low profile surface mounted
(1) (2) application in order to
BAS21T‐T
optimize board
space.
G ‐WS Package outline
Packing SOD-123H
Tape&Reel: 3 Kpcs/Reel 0.146(3.7)
loss, high efficiency.
• Low power
Note: (1)
Packing code, Tape&Reel Packing
0.130(3.3)
• High current capability, low forward voltage drop.
surge capability.
• High(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
ina
ry
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per***Disclaimer***
MIL-STD-750
Pr
el
im
Method 2026
WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters)
• Polarity
: Indicated by cathode band
specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any
changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified.
which may be included on WILLAS data sheets and/ or specifications can Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
WILLAS does not assume any liability arising out of the application or Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak
Reverse
Voltage
Volt
V
RRM
use of any product or circuit. Volt
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Volt
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS products are not designed, intended or authorized for use in medical, Am
Maximum Average
Forward Rectified Current
IO
1.0
life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
superimposed
on rated load (JEDEC method)
applications where a failure or malfunction of component or circuitry may directly ℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
or indirectly cause injury or threaten a life without expressed written approval PF
120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55
to
+150
Operating Temperature
Range
T
J
℃
of WILLAS. Customers using or selling WILLAS components for use in - 65 to +175
Storage Temperature Range
TSTG
℃
such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
Inc and its subsidiaries harmless against all claims, damages and expenditures
. FM1100-MH FM1150-MH FM1200-MH UNI
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volt
10
mAm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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