BAV70T,BAV99T,BAW56T(SOT 523)

BAV70T
FM120-M+
BAV99TTHRU
BAW56T
FM1200-M+
WILLAS
SOT-523
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
SWITCHING
DIODE
process design, excellent power dissipation offers
• Batch
FEATURES
better reverse leakage current and thermal resistance.
Low profile surface
z
Fast•Switching
Speedmounted application in order to
optimize board space.
z
For General
Purpose
Switching
loss, high
efficiency. Applications
• Low power
High current capability, low forward voltage drop.
z
High• Conductance
surge capability.
• Highpackage
z
Pb-Free
is available
• Guardring for overvoltage protection.
RoHS
product
for packing
code suffix ”G”
high-speed
switching.
• Ultra
Halogen
freeepitaxial
productplanar
for packing
code
suffix
“H”
chip, metal
silicon
junction.
• Silicon
parts meet
environmental
standards of
• Lead-free
Moisture
Sensitivity
Level
1
z
SOT-523
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
•
Terminals :Plated
solderable
per MIL-STD-750
BAW56T Marking:
JD terminals,
BAV70T
Marking:
JJ
BAV99T
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Marking: JE
Method 2026
• Polarity
: Indicated
by cathode band
Maximum
Ratings
@Ta=25℃
• Mounting Position : Any
Parameter
• Weight
: Approximated 0.011 gram Symbol
Dimensions in inches and (millimeters)
Limit
Unit
Reverse voltage
VR
85
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
IO
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load,
derate current by 20%
power
dissipation
PD
Forward
Forward current
RATINGS
V
75
mA
150
mW
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Junction
temperature
Marking Code
Tj
TVRRM
Maximum Recurrent Peak Reverse Voltage
Operating/Storage temperature
stg
VRMS
Maximum RMS Voltage
12
20
13
30
14
40
14
21
28
150
15
50
16
60
18
80
10
100
35
42
56
70
60
80
100
-55~+150
Maximum DC Blocking Voltage
20
30
40
50
VDC unless
ELECTRICAL
CHARACTERISTICS (Ta=25℃
otherwise
specified)
IO
Maximum Average Forward Rectified Current
Parameter
Symbol Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Reverse breakdown voltage
Typical Thermal Resistance (Note 2)
Operating
Range
ReverseTemperature
voltage leakage
current
Storage Temperature Range
IR1
IR2
TSTG VR=25V
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Diode
NOTES:
VF
CD
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Reverse recovery time
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
85
40
120
-55 to +125
120
200
Vo
105
140
Vo
150
200
Vo
Am
Max
Unit
Am
V
2
μA
0.03
μA
-55 to +150
- 65 to +175
VF IF=10mA
@T A=125℃
capacitance
1.0
Min
30
conditions
℃
115
150
℃
P
℃
℃
715
IF=1mA
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH FM1200-MH UN
SYMBOL
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
RΘJA
IR= 1μA
CJ VR=75V
TJ
Forward voltage
IFSM
V(BR)
Typical Junction Capacitance (Note 1)
Test
℃
t rr
IR
0.50
IF=50mA
IF=150mA
VR=0
f=1MHz
IF=IR=10mA
Irr=0.1×IR,RL=100Ω
0.70
0.85855
0.5
10
1000
1250
0.9
mV
0.92
Vo
mA
1.5
pF
4
ns
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
BAV70T
FM120-M+
BAV99TTHRU
BAW56T
FM1200-M+
WILLAS
SOT-523
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
Typical Characteristics
T=
a 2
5℃
1
Mechanical
data
0.4
Method
2026 0.8
FORWARD
VOLTAGE
VF
Polarity : Indicated by cathode
band
•
• Mounting Position : Any
• Weight : Approximated 0.011 gram
1.2
Characteristics
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
(nA)
3000
• Epoxy : UL94-V0 rated flame retardant
0.3
• Case : Molded plastic, SOD-123H
,
•0.1Terminals :Plated terminals, solderable per MIL-STD-750
0.0
SOD-123H
Reverse
10000
REVERSE CURRENT IR
better reverse leakage current and thermal resistance.
surface mounted
application in order to
• Low profileForward
Characteristics
300optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
100
• High surge capability.
•30Guardring for overvoltage protection.
• Ultra high-speed switching.
•10Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• 3RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
T=
a 1
00
℃
FORWARD CURRENT
IF
(mA)
• Batch process design, excellent power dissipation offers
0.071(1.8)
0.056(1.4)
300
100
30
Ta=25℃
10
0.040(1.0)
0.024(0.6)
3
1
1.6
Ta=100℃
1000
0.031(0.8) Typ.
0
0.031(0.8) Typ.
20
(V)
40
60
80
100
DimensionsVOLTAGE
in inches andV(millimeters)
REVERSE
(V)
R
MAXIMUM
RATINGS
AND ELECTRICAL CHARACTERISTICSPower Derating Curve
Capacitance
Characteristics
150
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL FM120-MH FM130-MH
Maximum
1.2Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
0.8
superimposed on rated load (JEDEC method)
0.6
8
16
TJ
12
Storage Temperature Range
REVERSE VOLTAGE
VR
CHARACTERISTICS
16
60
18
80
10
100
115
150
120
200
Vo
21
28
35
42
56
70
105
140
Vo
40
50
60
80
100
150
200
Vo
30
100
1.0
30
50
20
0
-55 to +1250
Am
Am
40
120
25
50
75
℃
P
-55
100
- 65 to +175
AMBIENT TEMPERATURE
to +150
125
Ta
℃
150
℃
(℃)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
15
50
TSTG
(V)
VF
Maximum Forward Voltage at 1.0A DC
14
40
CJ
Typical Junction Capacitance (Note 1)
13
30
RΘJA
Typical Thermal Resistance (Note 2)
0
4 Range
Operating Temperature
(mW)
RATINGS
Marking Code
PD
1.4
200
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ratings1.6
at 25℃ ambient temperature unless otherwise specified.
Ta=25℃
Single phase half wave, 60Hz, resistive of inductive load. f=1MHz
For capacitive load, derate current by 20%
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
BAV70T
FM120-M+
BAV99TTHRU
BAW56T
FM1200-M+
WILLAS
SOT-523 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOT-523
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.004(0.10)MIN.
Halogen free product for packing code suffix "H"
.035(0.90)
.028(0.70)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,.067(1.70)
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.059(1.50)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
.069(1.75)
.057(1.45)
Mechanical data
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
.043(1.10)
.035(0.90)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Rated DC Blocking Voltage
@T A=125℃
28
35
42
30
40
50
60
IO
IFSM
2- Thermal Resistance From Junction to Ambient
.008(0.20)
18
10
80
100
.004(0.10)
115
150
120
200
Vo
56
70
105
140
Vo
80
100
150
200
Vo
1.0
30
40
120
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
TSTG
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
IR
.014(0.35)
1- Measured at 1 MHZ and applied reverse voltage of.006(0.15)
4.0 VDC.
NOTES:
16
60
21
VF
Maximum Average Reverse Current at @T A=25℃
15
50
20
TJ
CHARACTERISTICS
40
14
Operating Temperature Range
Maximum Forward Voltage at 1.0A DC
30
VDC
CJ
.004(0.10)MAX.
12
20
VRMS
Typical Junction Capacitance (Note 1)
Storage Temperature Range
VRRM
RΘJA
Typical Thermal Resistance (Note 2)
.014(0.35)
13
14
.010(0.25)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
0.50
0.70
0.85
0.5
.035(0.90)
.028(0.70)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.9
0.92
Vo
10
mA
Dimensions in inches and (millimeters)
2012-06
2012-1
Rev.D CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
BAV70T
FM120-M+
BAV99T
THRU
BAW56T
FM1200-M+
WILLAS
SOT-523
Plastic-Encapsulate Diodes 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
Pb Free Product
SOD-123+
PACKAGE
Package outline
Features
Ordering Information: • Batch process design, excellent power dissipation offers
better reverse leakage
current and thermal resistance.
Device PN Packing SOD-123H
Tape&Reel: 3 Kpcs/Reel application in order to
• Low profile surface mounted
(1) (2)
Partboard
Number
optimize
space.‐T
G ‐WS 0.146(3.7)
Low power loss, high efficiency.
•Note: (1)
Packing code, Tape&Reel Packing
0.130(3.3)
• High current capability, low forward voltage drop.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” capability.
• High surge
• Guardring for overvoltage protection.
• Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
• Terminals :Plated terminals, solderable per ***Disclaimer***
MIL-STD-750
0.031(0.8) Typ.
Method 2026
WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any
changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight
: Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
which may be included on WILLAS data sheets and/ or specifications can For
capacitive
load, derate current by 20%
and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
Marking CodeWILLAS does not assume any liability arising out of the application or 12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak
Reverse
Voltage
Volts
V
RRM
use of any product or circuit. Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS products are not designed, intended or authorized for use in medical, Amps
Maximum Average
Forward Rectified Current
IO
1.0
Peak Forwardlife‐saving implant or other applications intended for life‐sustaining or other related Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposed on rated load (JEDEC method)
applications where a failure or malfunction of component or circuitry may directly ℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
or indirectly cause injury or threaten a life without expressed written approval PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature
Range
T
J
℃
of WILLAS. Customers using or selling WILLAS components for use in - 65 to +175
Storage Temperature Range
TSTG
℃
such applications do so at their own risk and shall agree to fully indemnify WILLAS FM1150-MH FM1200-MH UNIT
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH.FM1100-MH
Inc and its subsidiaries harmless against all claims, damages and expenditures
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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