BAS19W,BAS20W,BAS21W(SOT 323)

BAS19W
FM120-M+
BAS20WTHRU
BAS21W
FM1200-M+
WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Package outline
Features
• Batch process
SWITCHING
DIODEdesign, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
z
Fast optimize
Switching
Speed
board
space.
power loss,
high efficiency.
• Low Mount
z
Surface
Package
Ideally Suited for Automatic Insertion
• High current capability, low forward voltage drop.
z
For•General
Purpose Switching Applications
High surge capability.
for overvoltage protection.
• Guardring
z
High
Conductance
high-speed
• Ultrapackage
Pb-Free
isswitching.
available
z
Silicon epitaxial planar chip, metal silicon junction.
•
RoHS product for packing code suffix ”G”
• Lead-free parts meet environmental standards of
z
Pb Free Product
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
Halogen
free product
for packing code suffix “H”
MIL-STD-19500
/228
product for packing
code
• RoHS Sensitivity
Moisture
Level
1 suffix "G"
3
Halogen free product for packing code suffix "H"
2
Mechanical data
0.040(1.0)
0.024(0.6)
Marking:
BAS19W
: UL94-V0KA8
rated flame
retardant
• Epoxy
BAS21W
KT3
: Molded plastic,
• Case
BAS20W
KT2 SOD-123H
,
•
Terminals
:Plated
terminals, solderable per MIL-STD-750
Maximum Ratings @Ta=25℃
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Parameter
Indicated by cathode band
• Mounting Position : Any
Peak Repetitive
Reverse Voltage
• Weight : Approximated
0.011 gram
Symbol
VRRM
DC Blocking Voltage
VR
Average Rectified Output Current
IO
BAS19W
BAS20W
BAS21W
Dimensions in inches and (millimeters)
100
150
V
250
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Pd
Power Dissipation
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate
current by
RθJA
Thermal
Resistance.
Junction
to20%
Ambient
200
mA
200
mW
℃/W
625
FM130-MH FM140-MH FM150-MH
SYMBOL T
FM120-MH
FM1200-MH UN
℃
150FM160-MH FM180-MH FM1100-MH FM1150-MH
J
RATINGS
Junction Temperature
Marking Code
TSTG 12
20
13
30
14
40
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM Symbol
2SHUDWLQJStorage Temperature Range
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
15
50
16
60
18
80
10
100
115
℃
150
120
200
Vo
28
35
42
56
70
105
140
Vo
40
50
60
80
100
150
200
Vo
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Peak Forward Surge
Current 8.3 ms single half sine-wave
Parameter
superimposed on rated load (JEDEC method)
Reverse
breakdown
Typical
Thermal
Resistancevoltage
(Note 2)
BAS19W
RΘJA
Typical Junction Capacitance (Note 1)
BAS20WCJ
TJ
Operating Temperature Range
CHARACTERISTICS
Reverse
voltage
leakage
current
Maximum
Forward
Voltage
at 1.0A
DC
V(BR)
BAS19W
BAS20WVF
@T A=125℃
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
250
Unit
Am
℃/
-55 to +150
P
V
℃
℃
VR=100V
IR
VR=150V
0.50
VR=200V
IR
0.70
0.1
0.85
µA
0.9
0.5
0.92
VF
CD
trr
IF=100mA
IF=200mA
VR=0V, f=1MHz
IF=IR=30mA,Irr=0.1×IR
Vo
mA
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Diode capacitance
-55 to +125
100
40
120
150
Max
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
voltage
Reveres recovery time
IR= 100µA
Am
- 65 to +175
Maximum Average Reverse Current at @T A=25℃
BAS21W
Forward
NOTES:
conditions
TSTG
Test
1.0
Min
30
BAS21W
Storage Temperature Range
Rated DC Blocking Voltage
Unit
1
1.25
5
50
V
pF
ns
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
BAS19W
FM120-M+
BAS20W
THRU
BAS21W
FM1200-M+
WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
• Low power loss, high efficiency. Typical Characteristics
• High current capability, low forward voltage drop.
Forward Characteristics
•200High surge capability.
1000
•100Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
100
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Reverse Characteristics
0.071(1.8)
0.056(1.4)
Ta=100℃
(nA)
T=
a 2
5℃
Halogen free product for packing code suffix "H"
Mechanical
data
1
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
•0.1Terminals :Plated terminals, solderable per MIL-STD-750
REVERSE CURRENT IR
MIL-STD-19500 /228
10
• RoHS product for packing code suffix "G"
T=
a 1
00
℃
FORWARD CURRENT
IF
(mA)
optimize board space.
10
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Ta=25℃
1
Method 2026
• Polarity : Indicated by cathode band
0.01
• Mounting Position : Any
0.0
0.2
0.4
0.6
0.8
• Weight : Approximated
gram
FORWARD 0.011
VOLTAGE
V (V)
Dimensions in inches and (millimeters)
1.0
0.1
0.1
1.2
1
10
REVERSE VOLTAGE
F
VR
100
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
5
RATINGS
a
Marking Code
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum
Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
0.1
0
IO
IFSM
12
Maximum Forward Voltage atREVERSE
1.0A DCVOLTAGE VR (V)
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Vo
28
35
42
56
70
105
140
Vo
40
50
60
80
100
150
200
Vo
150
1.0
30
100
40
120
50
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
TSTG
4
8
CHARACTERISTICS
℃
0
16
20
0
25
50
75
100
125
FM120-MH
FM130-MH FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200-MH UN
SYMBOL
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
200
PD
f=1MHz
(mW)
VRRM
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Maximum Recurrent Peak Reverse Voltage
1Average
Power Derating Curve
250
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL
FM120-MH
T =25
℃
POWER DISSIPATION
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load,Capacitance
derate current
by 20%
Characteristics
Per Diode
@T A=125℃
IR
0.50
AMBIENT
Tj (℃)
0.70 TEMPERATURE 0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
BAS19W
FM120-M+
BAS20W
THRU
BAS21W
FM1200-M+
WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-323
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.087(2.20)
• Epoxy : UL94-V0 rated flame retardant.070(1.80)
.054(1.35)
.045(1.15)
Mechanical data
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.096(2.45)
.078(2.00)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.056(1.40)
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
.047(1.20)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
.004(0.10)MAX.
Operating Temperature Range
TJ
Storage Temperature Range
.010(0.25)
16 .003(0.08)
18
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
60
80
100
115
150
120
200
Vol
35
42
56
70
105
140
Vol
50
60
80
100
150
200
Vol
1.0
30
40
120
-55 to +125
Am
Am
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
IR
.016(0.40)
.008(0.20)
@T A=125℃
NOTES:
.043(1.10)
.032(0.80)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
0.50
0.70
0.85
0.9
0.5
0.92
Vol
mAm
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-1
Rev.D
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
BAS19W
FM120-M+
BAS20W
THRU
BAS21W
FM1200-M+
WILLAS
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Ordering
FeaturesInformation: • Batch process design, excellent power dissipation offers
Device PN better reverse leakage
current and thermal resistance.
profile
surface mounted
application in order to
• LowPart
Number
‐T(1)G(2)‐WS optimize board space.
Packing SOD-123H
Tape&Reel: 3 Kpcs/Reel 0.146(3.7)
Note: (1)
Packing code, Tape&Reel Packing
loss, high efficiency.
• Low power
0.130(3.3)
• High current capability, low forward voltage drop.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • High surge capability.
• Guardring for overvoltage protection.
• Ultra
high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS
product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
***Disclaimer***
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
WILLAS reserves the right to make changes without notice to any product Method 2026
Dimensions in inches and (millimeters)
• Polarity
: Indicated by cathode band
specification herein, to make corrections, modifications, enhancements or other Position : Any
• Mounting
changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified.
which may be included on WILLAS data sheets and/ or specifications can Single phase half wave, 60Hz, resistive of inductive load.
load, derate current by 20%
and do vary in different applications and actual performance may vary over time. For capacitive
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
WILLAS does not assume any liability arising out of the application or Marking Code
12
13
14
15
16
18
10
115
120
use of any product or circuit. 20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak Reverse Voltage
Vol
VRRM
Vol
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
V
RMS
Vol
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS products are not designed, intended or authorized for use in medical, Am
Maximum Average Forward Rectified Current
IO
1.0
life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
applications where a failure or malfunction of component or circuitry may directly superimposed
on rated load (JEDEC method)
℃/W
40
Typical Thermal
Resistance (Note 2)
RΘJA
or indirectly cause injury or threaten a life without expressed written approval PF
120
Typical Junction Capacitance (Note 1)
CJ
of WILLAS. Customers using or selling WILLAS components for use in -55 to +125
-55 to +150
Operating Temperature
Range
TJ
℃
- 65 to +175
Storage Temperature
Range
TSTG
℃
such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures
. FM1100-MH FM1150-MH FM1200-MH UN
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vol
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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