BAS19W FM120-M+ BAS20WTHRU BAS21W FM1200-M+ WILLAS SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process SWITCHING DIODEdesign, excellent power dissipation offers better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to z Fast optimize Switching Speed board space. power loss, high efficiency. • Low Mount z Surface Package Ideally Suited for Automatic Insertion • High current capability, low forward voltage drop. z For•General Purpose Switching Applications High surge capability. for overvoltage protection. • Guardring z High Conductance high-speed • Ultrapackage Pb-Free isswitching. available z Silicon epitaxial planar chip, metal silicon junction. • RoHS product for packing code suffix ”G” • Lead-free parts meet environmental standards of z Pb Free Product SOT-323 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1 Halogen free product for packing code suffix “H” MIL-STD-19500 /228 product for packing code • RoHS Sensitivity Moisture Level 1 suffix "G" 3 Halogen free product for packing code suffix "H" 2 Mechanical data 0.040(1.0) 0.024(0.6) Marking: BAS19W : UL94-V0KA8 rated flame retardant • Epoxy BAS21W KT3 : Molded plastic, • Case BAS20W KT2 SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Maximum Ratings @Ta=25℃ 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Parameter Indicated by cathode band • Mounting Position : Any Peak Repetitive Reverse Voltage • Weight : Approximated 0.011 gram Symbol VRRM DC Blocking Voltage VR Average Rectified Output Current IO BAS19W BAS20W BAS21W Dimensions in inches and (millimeters) 100 150 V 250 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Pd Power Dissipation Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by RθJA Thermal Resistance. Junction to20% Ambient 200 mA 200 mW ℃/W 625 FM130-MH FM140-MH FM150-MH SYMBOL T FM120-MH FM1200-MH UN ℃ 150FM160-MH FM180-MH FM1100-MH FM1150-MH J RATINGS Junction Temperature Marking Code TSTG 12 20 13 30 14 40 VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM Symbol 2SHUDWLQJStorage Temperature Range Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage 15 50 16 60 18 80 10 100 115 ℃ 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Peak Forward Surge Current 8.3 ms single half sine-wave Parameter superimposed on rated load (JEDEC method) Reverse breakdown Typical Thermal Resistancevoltage (Note 2) BAS19W RΘJA Typical Junction Capacitance (Note 1) BAS20WCJ TJ Operating Temperature Range CHARACTERISTICS Reverse voltage leakage current Maximum Forward Voltage at 1.0A DC V(BR) BAS19W BAS20WVF @T A=125℃ 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 250 Unit Am ℃/ -55 to +150 P V ℃ ℃ VR=100V IR VR=150V 0.50 VR=200V IR 0.70 0.1 0.85 µA 0.9 0.5 0.92 VF CD trr IF=100mA IF=200mA VR=0V, f=1MHz IF=IR=30mA,Irr=0.1×IR Vo mA 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Diode capacitance -55 to +125 100 40 120 150 Max SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN voltage Reveres recovery time IR= 100µA Am - 65 to +175 Maximum Average Reverse Current at @T A=25℃ BAS21W Forward NOTES: conditions TSTG Test 1.0 Min 30 BAS21W Storage Temperature Range Rated DC Blocking Voltage Unit 1 1.25 5 50 V pF ns WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. BAS19W FM120-M+ BAS20W THRU BAS21W FM1200-M+ WILLAS SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to • Low power loss, high efficiency. Typical Characteristics • High current capability, low forward voltage drop. Forward Characteristics •200High surge capability. 1000 •100Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 100 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. Reverse Characteristics 0.071(1.8) 0.056(1.4) Ta=100℃ (nA) T= a 2 5℃ Halogen free product for packing code suffix "H" Mechanical data 1 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , •0.1Terminals :Plated terminals, solderable per MIL-STD-750 REVERSE CURRENT IR MIL-STD-19500 /228 10 • RoHS product for packing code suffix "G" T= a 1 00 ℃ FORWARD CURRENT IF (mA) optimize board space. 10 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Ta=25℃ 1 Method 2026 • Polarity : Indicated by cathode band 0.01 • Mounting Position : Any 0.0 0.2 0.4 0.6 0.8 • Weight : Approximated gram FORWARD 0.011 VOLTAGE V (V) Dimensions in inches and (millimeters) 1.0 0.1 0.1 1.2 1 10 REVERSE VOLTAGE F VR 100 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 5 RATINGS a Marking Code 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 0.1 0 IO IFSM 12 Maximum Forward Voltage atREVERSE 1.0A DCVOLTAGE VR (V) 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 150 1.0 30 100 40 120 50 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 TSTG 4 8 CHARACTERISTICS ℃ 0 16 20 0 25 50 75 100 125 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 200 PD f=1MHz (mW) VRRM CAPACITANCE BETWEEN TERMINALS CT (pF) Maximum Recurrent Peak Reverse Voltage 1Average Power Derating Curve 250 FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH T =25 ℃ POWER DISSIPATION Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load,Capacitance derate current by 20% Characteristics Per Diode @T A=125℃ IR 0.50 AMBIENT Tj (℃) 0.70 TEMPERATURE 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. BAS19W FM120-M+ BAS20W THRU BAS21W FM1200-M+ WILLAS SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-323 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .087(2.20) • Epoxy : UL94-V0 rated flame retardant.070(1.80) .054(1.35) .045(1.15) Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. .004(0.10)MIN. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .096(2.45) .078(2.00) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .056(1.40) Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 Maximum Average Forward Rectified Current IO IFSM .047(1.20) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) .004(0.10)MAX. Operating Temperature Range TJ Storage Temperature Range .010(0.25) 16 .003(0.08) 18 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN 60 80 100 115 150 120 200 Vol 35 42 56 70 105 140 Vol 50 60 80 100 150 200 Vol 1.0 30 40 120 -55 to +125 Am Am ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage IR .016(0.40) .008(0.20) @T A=125℃ NOTES: .043(1.10) .032(0.80) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC 0.50 0.70 0.85 0.9 0.5 0.92 Vol mAm 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. BAS19W FM120-M+ BAS20W THRU BAS21W FM1200-M+ WILLAS SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Ordering FeaturesInformation: • Batch process design, excellent power dissipation offers Device PN better reverse leakage current and thermal resistance. profile surface mounted application in order to • LowPart Number ‐T(1)G(2)‐WS optimize board space. Packing SOD-123H Tape&Reel: 3 Kpcs/Reel 0.146(3.7) Note: (1) Packing code, Tape&Reel Packing loss, high efficiency. • Low power 0.130(3.3) • High current capability, low forward voltage drop. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant 0.040(1.0) 0.024(0.6) • Case : Molded plastic, SOD-123H ***Disclaimer*** , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. WILLAS reserves the right to make changes without notice to any product Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band specification herein, to make corrections, modifications, enhancements or other Position : Any • Mounting changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified. which may be included on WILLAS data sheets and/ or specifications can Single phase half wave, 60Hz, resistive of inductive load. load, derate current by 20% and do vary in different applications and actual performance may vary over time. For capacitive SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS WILLAS does not assume any liability arising out of the application or Marking Code 12 13 14 15 16 18 10 115 120 use of any product or circuit. 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Vol VRRM Vol 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS Vol Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS products are not designed, intended or authorized for use in medical, Am Maximum Average Forward Rectified Current IO 1.0 life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am applications where a failure or malfunction of component or circuitry may directly superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA or indirectly cause injury or threaten a life without expressed written approval PF 120 Typical Junction Capacitance (Note 1) CJ of WILLAS. Customers using or selling WILLAS components for use in -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures . FM1100-MH FM1150-MH FM1200-MH UN CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vol 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.