BAV99W(SOT 323)

WILLAS
FM120-M+
BAV99W
THRU
FM1200-M+
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
SWITCHING
DIODE
• Batch process design, excellent power dissipation offers
FEATURES
better reverse leakage current and thermal resistance.
profile surface
mounted
application in order to
• Low
z
For
high-speed
switching
applications
optimize board space.
z
Connected
series
high efficiency.
• Low powerinloss,
High
current
capability,
low forward voltage drop.
•
z
Pb-Free package is available
• High surge capability.
RoHS
product
for packing code suffix ”G”
for overvoltage protection.
• Guardring
Halogen
free product
for packing code suffix “H”
switching.
• Ultra high-speed
epitaxial planar
chip,1metal silicon junction.
• Silicon Sensitivity
z
Moisture
Level
• Lead-free parts meet environmental standards of
SOT-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
1
3
2
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
ina
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
MARKING:
KJG
or A7 by cathode band
• Polarity
: Indicated
• Mounting Position : Any
Maximum Ratings @Ta=25℃
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
im
Parameter RATINGS AND ELECTRICAL
Symbol
Limit
MAXIMUM
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Reverse voltage
VR
Single phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
Forward
current
IO
RATINGS
75
V
150
mA
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
PD
Pr
el
Forward power dissipation
Marking Code
Maximum
Recurrent
Peak Reverse Voltage
Junction
temperature
Maximum RMS Voltage
Operating/Storage temperature
Maximum DC Blocking Voltage
200
12
20
13
30
14
40
15
50
150
16
60
18
80
10
100
VRMS
14
21
28
35
42
56
70
VDC
20
30
40
-55~+150
50
60
80
100
VRRM
Tj
Tstg
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
ELECTRICAL CHARACTERISTICS (Ta=25℃
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
TJ
Operating Temperature Range
Reverse
breakdown
Storage
Temperature
Range voltage
V(BR)
TSTG
CHARACTERISTICS
Reverse voltage
leakage current
Maximum Forward Voltage at 1.0A DC
Forward voltage
VF
@T A=125℃
-55 to +125
120
200
Volts
105
℃150
140
Volts
200
Volts
Amp
Amp
Max
- 65 to75
+175
IR= 100µA
115
℃/W
Unit
PF
-55 to +150
VR=20V0.50
VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
CD
VR=0V
IR
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
DiodeResistance
capacitance
2- Thermal
From Junction to Ambient
40
Min
120
conditions
VR=75V
NOTES:
Test
℃150
℃
V
2.5
µA
0.8525
nA
0.9
℃
SYMBOL
IR FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
unless otherwise specified)
CSymbol
J
Parameter(Note 1)
Typical Junction Capacitance
mW
1.0
30
Maximum Average Forward Rectified Current
Unit
0.70
0.5
10
f=1MHz
0.92
Volts
715
855
1000
1250
mV
2
pF
4
ns
mAmp
IF=IR=10mA
Reveres recovery time
trr
Irr=0.1×IR
RL=100Ω
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
SOT-323 Plastic-Encapsulate Diodes
FM120-M+
BAV99W
THRU
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-323
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
.087(2.20)
• Epoxy : UL94-V0 rated flame retardant .070(1.80)
0.040(1.0)
0.024(0.6)
ry
.054(1.35)
.045(1.15)
Mechanical data
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
• RoHS product for packing code suffix "G"
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
ina
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.096(2.45)
.078(2.00)
Pr
eli
m
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.056(1.40)
Marking Code
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
.004(0.10)MAX.
Storage Temperature Range
.010(0.25)
.003(0.08)
18
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Recurrent Peak Reverse Voltage
.047(1.20)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.012(0.3) Typ.
80
100
115
150
120
200
Volts
42
56
70
105
140
Volts
60
80
100
150
200
Volts
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
VF
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
IR
.016(0.40)
.008(0.20)
@T A=125℃
NOTES:
.043(1.10)
.032(0.80)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
0.50
0.70
0.85
0.9
0.92
0.5
Volts
mAmps
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-1
Rev.D
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAV99W
THRU
FM1200-M+
SOT-323 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Pb Free Product
Package outline
Ordering
Features Information: • Batch process design, excellent power dissipation offers
Device PN better reverse leakage
current and thermal resistance.
(1) (2)
surface mounted
in order to
• Low profileBAV99W ‐T
G application
‐WS optimize board space.
Packing SOD-123H
Tape&Reel: 3 Kpcs/Reel 0.146(3.7)
Note: (1)
Packing code, Tape&Reel Packing loss, high efficiency.
• Low power
0.130(3.3)
• High current capability, low forward voltage drop.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • High surge capability.
• Guardring for overvoltage protection.
• Ultra
high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
ina
ry
• Case : Molded plastic, SOD-123H
***Disclaimer***
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Pr
el
im
WILLAS reserves the right to make changes without notice to any product Method 2026
Dimensions in inches and (millimeters)
• Polarity
: Indicated by cathode band
specification herein, to make corrections, modifications, enhancements or other Position : Any
• Mounting
changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified.
which may be included on WILLAS data sheets and/ or specifications can Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
RATINGS
WILLAS does not assume any liability arising out of the application or Marking Code
12
13
14
15
16
18
10
115
120
use of any product or circuit. 20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak Reverse Voltage
Volts
VRRM
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
V
RMS
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS products are not designed, intended or authorized for use in medical, Amp
Maximum Average Forward Rectified Current
IO
1.0
life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
applications where a failure or malfunction of component or circuitry may directly superimposed
on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
or indirectly cause injury or threaten a life without expressed written approval PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
of WILLAS. Customers using or selling WILLAS components for use in -55 to +150
Operating Temperature
Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures
. FM1100-MH FM1150-MH FM1200-MH UNIT
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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