WILLAS FM120-M+ LM1MA141WATHRU Common Anode Silicon FM1200-M+ LM1MA142WA 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Dual Switching DiodeSOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize boardAnode space.Silicon Epitaxial Planar Dual Diode is designed for use This Common • Low power loss, high efficiency. in ultra high speed switching applications. This device is housed in the S27– • High current capability, low forward voltage drop. package whichcapability. is designed for low power surface mount applications. • High surge for protection. •z•Guardring Fast trr, < 10 overvoltage ns high-speed switching. •z•Ultra Low CD, < 15 pF epitaxial planar chip, metal silicon junction. •zSilicon We declare that the material of product parts meet environmental standards of • Lead-free compliance with RoHS requirements. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. SOT-323 PACKAGE COMMON ANODE DUAL SWITCHING 0.071(1.8) DIODE 0.056(1.4) 40/80 V-100 mA SURFACE MOUNT /228 Level 1 Moisture Sensitivity zMIL-STD-19500 for packing code suffix "G" • RoHS product DEVICE MARKING AND ORDERING INFORMATION Halogen free product for packing code suffix "H" Mechanical data Device Package Shipping 0.040(1.0) 0.024(0.6) : UL94-V0 rated flame retardant • Epoxy LM1MA141WA SOT-323 3000/Tape&Reel • Case : Molded plastic, SOD-123H SOT-323 , LM1MA142WA 3000/Tape&Reel • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. SOT–323 /SC – 70 Pb-Free package is 2026 available Method RoHS product for packing code suffix ”G” Polarity : Indicated by cathode band Halogen free product for packing code suffix “H” Mounting Position : Any • • DEVICE MARKING • Weight : Approximated 0.011 gram LM1MA141WA = MN 3 LM1MA142WA =MO 1 MAXIMUM 2 MAXIMUM RATINGSRATINGS (TA = 25°C)AND ELECTRICAL CHARACTERISTICS CATHODE Value Unit 40 Vdc Marking Symbol LM1MA142WA 80 X Type No. 141WA142WA FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH RATINGS Symbol MN MO Peak Reverse Voltage LM1MA141WA VRM 40 Vdc LM1MA142WA VRRM Single VRMS Dual VDC Single Maximum Recurrent Peak Reverse Voltage Forward Current Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Current Maximum Average Forward Rectified Current Dual Peak Forward Surge Current 8.3 Current ms single half sine-wave Peak Forward Surge Single superimposed on rated load (JEDEC method)Dual Typical Thermal Resistance (Note 2) THERMAL CHARACTERISTICS Typical Junction Capacitance (Note 1) IO IFSM 12 20 IF 14 20 IFM IFSM(1) RΘJA CJ MN 13 80 30 14 40 100 21 150 30 225 mAdc 16 60 18 10 115 The “X” represents alpha digit Date 80 a smaller 100 150 28 35 Code. The Date Code indicates the actual month 42 in which the part 56 was manufactured. 70 105 40 50 60 mAdc 340 500 750 15 50 80 100 150 V 140 V 200 V 1.0 30 mAdc 40 120 U 120 200 A A ℃ -55 to +150 SymbolTJ Max-55 to +125 Unit 65 to +175 TSTG PD 150 mW 150 °C Junction Temperature TJ FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS Operating/Storage Temperature Tstg SYMBOL –55 ~ +150 °C Rating Operating Temperature Range Dimensions in inches and (millimeters) ANODE Ratings at 25℃ ambientRating temperature unless otherwise specified. Symbol Single phase half wave, 60Hz, resistive of inductive load. Reverse Voltage LM1MA141WA VR For capacitive load, derate current by 20% Marking Code 0.031(0.8) Typ. Storage Temperature Range Power Dissipation Maximum Forward Voltage at 1.0A DC VF 0.50 ELECTRICAL CHARACTERISTICS (TA = 25°C) Maximum Average Reverse Current at @T A=25℃ IR Characteristic @T A=125℃ Rated DC Blocking Voltage NOTES: Symbol Reverse Voltage Leakage Current LM1MA141WA IR LM1MA142WA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Forward Voltage 2- Thermal Resistance From Junction to Ambient Reverse Breakdown Voltage Diode Capacitance Reverse Recovery LM1MA141WA LM1MA142WA Time VF VR CD trr(2) 0.70 Condition VR = 35 V 0.9 0.85 0.5 Min 10 0.92 U V — Max 0.1 Unit µAdc VR = 75 V IF = 100 mA IR = 100 µA — — 40 80 0.1 1.2 — — Vdc Vdc VR=0, f=1.0 MHz — 15 pF IF=10mA,VR=6.0V RL=100Ω,Irr=0.1 IR — 10 ns m 1. t = 1 SEC 2012-06 2. trr Test Circuit 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ LM1MA141WATHRU Common Anode Silicon LM1MA142WA FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Dual Switching DiodeSOD-123+ Package outline Features • Batch process design, excellent power dissipation offers better reverse current and thermal resistance. RECOVERY TIME leakage EQUIVALENT TEST CIRCUIT • Low profile surface mounted application in order to INPUT PULSE tr optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. RL A • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of • VR IF = 10 mA VR = 6 V RL = 100 Ω tp = 2 µs tr = 0.35 ns 0.040(1.0) 0.024(0.6) TA = 150°C 0.031(0.8) Typ. 0.031(0.8) Typ. TA = 125°C 1.0 Dimensions inches and (millimeters) T =in85°C A 0.1 TA = 55°C Ratings at 25℃ ambient temperature unless otherwise specified. TA = 25°C Single phase half wave, 60Hz, resistive of inductive load. 0.001 0.1 50 0 10 20 30 40 0.6 by 20% 0.8 1.0 For capacitive load, 0.4 derate current 1.2 0.2 V , FORWARD VOLTAGE (VOLTS) , REVERSE VOLTAGE (VOLTS) V F R FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH RATINGS 12 20 Figure 1. Forward Voltage VRRM Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage 1.75 Maximum DC Blocking Voltage CD , DIODE CAPACITANCE (pF) Maximum Average Forward Rectified Current 1.5 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range 14 40 15 Figure162. Reverse 18 Current 10 50 60 80 100 115 150 120 200 V VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 V IO IFSM 1.0 30 40 120 CJ -55 to +125 TJ A A ℃ -55 to +150 - 65 to +175 TSTG 1.0 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF 0.75 Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 13 30 V RΘJA 1.25 Maximum Forward Voltage at 1.0A DC 0 @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. t 0.012(0.3) Typ. 0.01 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code trr IF rr 0.071(1.8) 0.056(1.4) 10 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (mA) TA = 25°C 0.146(3.7) 0.130(3.3) I = 0.1 IR Mechanical data TA = -40°C tp 90% • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H TA = 85°C , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 PULSE 10% 100 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 1.0 SOD-123H OUTPUT t MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 10 Pb Free Product PACKAGE IR 0.50 2 4 0.70 6 VR, REVERSE VOLTAGE (VOLTS) 0.85 0.9 0.92 0.5 8 10 V m Figure 3. Diode Capacitance 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ LM1MA141WATHRU Common Anode Silicon LM1MA142WA FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Dual Switching DiodeSOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOT-323 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. .087(2.20) of • Lead-free parts meet environmental standards 0.012(0.3) Typ. .004(0.10)MIN. .054(1.35) .045(1.15) • RoHS product for packing code suffix "G".070(1.80) Halogen free product for packing code suffix "H" Mechanical data 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.031(0.8) Typ. .096(2.45) .078(2.00) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .056(1.40) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .010(0.25) .003(0.08) .047(1.20) RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V .004(0.10)MAX. Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) .016(0.40) TJ TSTG .008(0.20) Operating Temperature Range Storage Temperature Range CHARACTERISTICS Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage NOTES: 40 120 -55 to +125 ℃ -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC 1.0 30 .043(1.10) .032(0.80) @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR Dimensions in inches and (millimeters) 10 m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ LM1MA141WATHRU Common Anode Silicon FM1200-M+ LM1MA142WA 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Dual Switching DiodeSOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) • High current capability, low forward voltage drop. Device PN Packing • High surge capability. • Guardring for overvoltage(1)protection. (2) Part Number‐T G ‐WS Tape&Reel: 3 Kpcs/Reel • Ultra high-speed switching. Note: (1) epitaxial planar chip, metal silicon junction. • Silicon Packing code, Tape&Reel Packing • Lead-free parts meet environmental standards of (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS contained are intended to provide a product description only. "Typical" parameters Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum which may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS and do vary in different applications and actual performance may vary over time. Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS does not assume any liability arising out of the application or Am Maximum Average Forward Rectified Current IO 1.0 use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am superimposed on rated load (JEDEC method) ℃ 40 Typical Thermal Resistance (Note 2) RΘJA WILLAS products are not designed, intended or authorized for use in medical, P 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating life‐saving implant or other applications intended for life‐sustaining or other related Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS or indirectly cause injury or threaten a life without expressed written approval SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Vo 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 of WILLAS. Customers using or selling WILLAS components for use in 0.5 Maximum Average Reverse Current at @T A=25℃ IR mA 10 @T A=125℃ Rated DC such applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.