BAV70,BAV99,BAW56LT1(SOT 23)

BAV70
FM120-M+
BAV99 THRU
BAW56LT1
FM1200-M+
WILLAS
SOT-23
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
process design, excellent power dissipation offers
• Batch
SWITCHING
DIODE
better reverse leakage current and thermal resistance.
FEATURES
• Low profile surface mounted application in order to
optimize board space.
z
Fast Switching
Speed
• Low power loss, high efficiency.
z
For General
Purpose
Switching
Applications
capability,
low forward
voltage drop.
• High current
High
surge
capability.
•
z
High Conductance
• Guardring for overvoltage protection.
z
Pb-Free package is available
• Ultra high-speed switching.
RoHS
product
for packing
codemetal
suffix
”G” junction.
epitaxial
planar chip,
silicon
• Silicon
Lead-free
parts
meet
environmental
standards
of
•
Halogen free product for packing code suffix “H”
SOD-123H
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
Moisture
Level
1 suffix "G"
product for packing
code
• RoHSSensitivity
z
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity
: Indicated by cathode band
BAW56LT1
Marking:
A1
BAV70 Marking: A4
Position : Any
• Mounting
Maximum
Ratings
@Ta=25℃
• Weight : Approximated 0.011 gram
BAV99 Marking: A7 Dimensions in inches and (millimeters)
Parameter
Symbol CHARACTERISTICS
Limit
MAXIMUM RATINGS AND ELECTRICAL
Ratings
at 25℃ ambient temperature unless otherwise specified.
VR
Reverse
Voltage
Single phase half wave, 60Hz, resistive of inductive load.
IF
Forward
Current
For capacitive load, derate current by 20%
Unit
70
V
200
mA
500FM160-MH FM180-MH FM1100-MH FM1150-MH
SYMBOL
FM120-MH FM130-MH FM140-MH FM150-MH
mA FM1200-MH U
IFM(surge)
RATINGS
Peak Forward Surge Current
Marking Code
Power Dissipation
12
20
13
30
14
40
15
16
225
50
60
18
80
10
100
115
mW
150
120
200
V
VRMSRθJA 14
21
28
35 556 42
56
70
140
V
20
30
40
50
80
100
105
℃/W
200
V
VRRM
Maximum Recurrent Peak Reverse Voltage
Maximum
RMS Voltage
Thermal
Resistance
Junction to Ambient
PD
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
TSTG
IFSM
Junction Temperature
Operating/Storage
Temperature Range
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Electrical Characteristics @Ta=25℃
TJ
CJ
Typical Junction Capacitance (Note 1)
Parameter
Symbol
TJ
Operating Temperature Range
Storage Temperature
Range
Reverse
breakdown
voltage
V TSTG
R
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Forward
Maximumvoltage
Average Reverse Current at @T A=25℃
VSYMBOL
F1
VF2 VF
30
VF3 IR
Min
Typ
-55
to +125 Max
70
Unit V
40
120
Conditions
-55 to +150
-I65
to +175
R=100μA
0.715
V FM160-MH
IF=1mA
FM120-MH FM130-MH FM140-MH FM150-MH
FM180-MH FM1100-MH FM1150-MH FM1200-MH U
0.500.855
V 0.70 IF=10mA
0.85
V
IF=150mA
IR
Reverse
current
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
2.5
μA
VR=70V
CT
1.5
pF
VR=0,f=1MHz
t rr
6
ns
2- Thermal Resistance From Junction to Ambient
Reverse recovery time
2012-06
2012-1
0.9
0.92
0.5
1.25
Capacitance between terminals
℃
VF4
NOTES:
A
IF=50mA
10
A
℃
V
@T A=125℃
℃
1.0
1
Rated DC Blocking Voltage
150
-55~+150 RΘJA
Typical Thermal Resistance (Note 2)
60
150
V
m
IF = IR = 10mA,
Irr= 0.1 x IR, RL = 100Ω
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BAV70
FM120-M+
BAV99 THRU
BAW56LT1
FM1200-M+
WILLAS
SOT-23 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
Typical Characteristics
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Reverse
1000
0.146(3.7)
Characteristics
0.130(3.3)
(nA)
300
Ta
=2
5℃
MIL-STD-19500 /228
10
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
3
: UL94-V0 rated flame retardant
• Epoxy
1
• Case : Molded plastic, SOD-123H
,
•0.3Terminals :Plated terminals, solderable per MIL-STD-750
REVERSE CURRENT IR
Ta
=1
00
℃
FORWARD CURRENT
IF
(mA)
optimize board space.
high efficiency.
• Low power loss,Forward
Characteristics
•300High current capability, low forward voltage drop.
• High surge capability.
•100Guardring for overvoltage protection.
• Ultra high-speed switching.
• 30Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Ta=100℃
100
30
10
0.040(1.0)
0.024(0.6)
Ta=25℃
0.031(0.8) Typ.
0.031(0.8) Typ.
3
Method 2026
•0.1Polarity
: Indicated
by cathode
band 1.2
0.0
0.4
0.8
FORWARD
VOLTAGE
V (V)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
1
1.6
Dimensions
in inches
and (millimeters)
20
40
60
0
REVERSE VOLTAGE
F
VR
80
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
f=1MHz
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
1.3
VRRM
13
30
Maximum RMS Voltage
VRMS
14
PD
Maximum Recurrent Peak Reverse Voltage
12
20
Maximum DC Blocking Voltage
VDC
20
30
1.2
IO
IFSM
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
1.1
Storage Temperature
Range
1.0
0
5
10
REVERSE VOLTAGE
CHARACTERISTICS
15
VR
(V)
TSTG
20
10
100
115
150
120
200
V
28
35
42
56
70
105
140
V
40
50
60
80
100
150
200
V
150
1.0
30
100
A
A
40
120
50
0
18
80
-55 to +150
0
25
50
℃
- 65 to +175
75
100
Ta
125
150
(℃ )
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
16
60
AMBIENT TEMPERATURE
VF
Maximum Forward Voltage at 1.0A DC
200
15
50
-55 to +125
TJ
Operating Temperature Range
21
CJ
Typical Junction Capacitance (Note 1)
14
40
RΘJA
Typical Thermal Resistance (Note 2)
250
(mW)
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Marking Code
Power Derating Curve
300
POWER DISSIPATION
Ratings at 25℃ ambient temperature unless otherwise specified.
Characteristics
Single phase half wave, Capacitance
60Hz, resistive
of inductive load.
1.4
For capacitive load, derate current by 20%
Ta=25℃
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
BAV70
FM120-M+
BAV99 THRU
BAW56LT1
FM1200-M+
WILLAS
SOT-23 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOT-23
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.122(3.10)
• Epoxy : UL94-V0 rated flame retardant
.106(2.70)
Halogen free product for packing code suffix "H"
.063(1.60)
.047(1.20)
0.071(1.8)
0.056(1.4)
.006(0.15)MIN.
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Mechanical data
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
.080(2.04)
Maximum RMS Voltage .070(1.78)
VRRM
Maximum Recurrent Peak Reverse Voltage
14
40
15
50
.008(0.20)
10
115
16
60
18
80
100
VRMS
14
21
28
35
42
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
.004(0.10)MAX.
CHARACTERISTICS
VF
@T A=125℃
NOTES:
IR
.020(0.50)
.012(0.30)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
V
105
140
V
150
200
V
40
120
-55 to +125
A
A
℃
-55 to +150
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
100
120
200
150
1.0
30
TSTG
Maximum Forward Voltage at 1.0A DC
13
30
.003(0.08)
56
70
12
20
0.50
0.70
0.85
0.9
0.92
0.5
.055(1.40)
.035(0.89)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.083(2.10)
.110(2.80)
Dimensions in inches and (millimeters)
10
V
m
Dimensions in inches and (millimeters)
2012-06
2012-1
Rev.D CORP
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
BAV70
FM120-M+
BAV99 THRU
BAW56LT1
FM1200-M+
WILLAS
SOT-23
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
FeaturesInformation: Ordering
• Batch process design, excellent power dissipation offers
better reverse Device PN leakage current and thermal resistance.
• Low profile surface mounted
(1) (2) application in order to
Part Number
‐T
optimize
board space.
G ‐WS Package outline
Packing SOD-123H
Tape&Reel: 3 Kpcs/Reel 0.146(3.7)
loss, high efficiency.
• Low power
Note: (1)
Packing code, Tape&Reel Packing
0.130(3.3)
• High current capability, low forward voltage drop.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” surge capability.
• High
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon
epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
• Case : Molded plastic, SOD-123H
,
***Disclaimer***
• Terminals :Plated terminals, solderable per
MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any
changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
which may be included on WILLAS data sheets and/ or specifications can For
capacitive
load, derate current by 20%
and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
WILLAS does not assume any liability arising out of the application or Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum use of any product or circuit. Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Am
Maximum WILLAS products are not designed, intended or authorized for use in medical, Average Forward Rectified Current
IO
1.0
life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
superimposed on rated load (JEDEC method)
applications where a failure or malfunction of component or circuitry may directly ℃/
40
Typical Thermal Resistance (Note 2)
RΘJA
or indirectly cause injury or threaten a life without expressed written approval PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating of WILLAS. Customers using or selling WILLAS components for use in Temperature Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
Inc and its subsidiaries harmless against all claims, damages and expenditures
. FM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Vo
10
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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