BAV70 FM120-M+ BAV99 THRU BAW56LT1 FM1200-M+ WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features process design, excellent power dissipation offers • Batch SWITCHING DIODE better reverse leakage current and thermal resistance. FEATURES • Low profile surface mounted application in order to optimize board space. z Fast Switching Speed • Low power loss, high efficiency. z For General Purpose Switching Applications capability, low forward voltage drop. • High current High surge capability. • z High Conductance • Guardring for overvoltage protection. z Pb-Free package is available • Ultra high-speed switching. RoHS product for packing codemetal suffix ”G” junction. epitaxial planar chip, silicon • Silicon Lead-free parts meet environmental standards of • Halogen free product for packing code suffix “H” SOD-123H SOT-23 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Moisture Level 1 suffix "G" product for packing code • RoHSSensitivity z Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band BAW56LT1 Marking: A1 BAV70 Marking: A4 Position : Any • Mounting Maximum Ratings @Ta=25℃ • Weight : Approximated 0.011 gram BAV99 Marking: A7 Dimensions in inches and (millimeters) Parameter Symbol CHARACTERISTICS Limit MAXIMUM RATINGS AND ELECTRICAL Ratings at 25℃ ambient temperature unless otherwise specified. VR Reverse Voltage Single phase half wave, 60Hz, resistive of inductive load. IF Forward Current For capacitive load, derate current by 20% Unit 70 V 200 mA 500FM160-MH FM180-MH FM1100-MH FM1150-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH mA FM1200-MH U IFM(surge) RATINGS Peak Forward Surge Current Marking Code Power Dissipation 12 20 13 30 14 40 15 16 225 50 60 18 80 10 100 115 mW 150 120 200 V VRMSRθJA 14 21 28 35 556 42 56 70 140 V 20 30 40 50 80 100 105 ℃/W 200 V VRRM Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Thermal Resistance Junction to Ambient PD Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO TSTG IFSM Junction Temperature Operating/Storage Temperature Range Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Electrical Characteristics @Ta=25℃ TJ CJ Typical Junction Capacitance (Note 1) Parameter Symbol TJ Operating Temperature Range Storage Temperature Range Reverse breakdown voltage V TSTG R CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Forward Maximumvoltage Average Reverse Current at @T A=25℃ VSYMBOL F1 VF2 VF 30 VF3 IR Min Typ -55 to +125 Max 70 Unit V 40 120 Conditions -55 to +150 -I65 to +175 R=100μA 0.715 V FM160-MH IF=1mA FM120-MH FM130-MH FM140-MH FM150-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 0.500.855 V 0.70 IF=10mA 0.85 V IF=150mA IR Reverse current 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2.5 μA VR=70V CT 1.5 pF VR=0,f=1MHz t rr 6 ns 2- Thermal Resistance From Junction to Ambient Reverse recovery time 2012-06 2012-1 0.9 0.92 0.5 1.25 Capacitance between terminals ℃ VF4 NOTES: A IF=50mA 10 A ℃ V @T A=125℃ ℃ 1.0 1 Rated DC Blocking Voltage 150 -55~+150 RΘJA Typical Thermal Resistance (Note 2) 60 150 V m IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BAV70 FM120-M+ BAV99 THRU BAW56LT1 FM1200-M+ WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Typical Characteristics • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Reverse 1000 0.146(3.7) Characteristics 0.130(3.3) (nA) 300 Ta =2 5℃ MIL-STD-19500 /228 10 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 3 : UL94-V0 rated flame retardant • Epoxy 1 • Case : Molded plastic, SOD-123H , •0.3Terminals :Plated terminals, solderable per MIL-STD-750 REVERSE CURRENT IR Ta =1 00 ℃ FORWARD CURRENT IF (mA) optimize board space. high efficiency. • Low power loss,Forward Characteristics •300High current capability, low forward voltage drop. • High surge capability. •100Guardring for overvoltage protection. • Ultra high-speed switching. • 30Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Ta=100℃ 100 30 10 0.040(1.0) 0.024(0.6) Ta=25℃ 0.031(0.8) Typ. 0.031(0.8) Typ. 3 Method 2026 •0.1Polarity : Indicated by cathode band 1.2 0.0 0.4 0.8 FORWARD VOLTAGE V (V) • Mounting Position : Any • Weight : Approximated 0.011 gram 1 1.6 Dimensions in inches and (millimeters) 20 40 60 0 REVERSE VOLTAGE F VR 80 (V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS f=1MHz RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U 1.3 VRRM 13 30 Maximum RMS Voltage VRMS 14 PD Maximum Recurrent Peak Reverse Voltage 12 20 Maximum DC Blocking Voltage VDC 20 30 1.2 IO IFSM Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) 1.1 Storage Temperature Range 1.0 0 5 10 REVERSE VOLTAGE CHARACTERISTICS 15 VR (V) TSTG 20 10 100 115 150 120 200 V 28 35 42 56 70 105 140 V 40 50 60 80 100 150 200 V 150 1.0 30 100 A A 40 120 50 0 18 80 -55 to +150 0 25 50 ℃ - 65 to +175 75 100 Ta 125 150 (℃ ) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 16 60 AMBIENT TEMPERATURE VF Maximum Forward Voltage at 1.0A DC 200 15 50 -55 to +125 TJ Operating Temperature Range 21 CJ Typical Junction Capacitance (Note 1) 14 40 RΘJA Typical Thermal Resistance (Note 2) 250 (mW) CAPACITANCE BETWEEN TERMINALS CT (pF) Marking Code Power Derating Curve 300 POWER DISSIPATION Ratings at 25℃ ambient temperature unless otherwise specified. Characteristics Single phase half wave, Capacitance 60Hz, resistive of inductive load. 1.4 For capacitive load, derate current by 20% Ta=25℃ @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. BAV70 FM120-M+ BAV99 THRU BAW56LT1 FM1200-M+ WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-23 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) .122(3.10) • Epoxy : UL94-V0 rated flame retardant .106(2.70) Halogen free product for packing code suffix "H" .063(1.60) .047(1.20) 0.071(1.8) 0.056(1.4) .006(0.15)MIN. MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Mechanical data • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code .080(2.04) Maximum RMS Voltage .070(1.78) VRRM Maximum Recurrent Peak Reverse Voltage 14 40 15 50 .008(0.20) 10 115 16 60 18 80 100 VRMS 14 21 28 35 42 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range .004(0.10)MAX. CHARACTERISTICS VF @T A=125℃ NOTES: IR .020(0.50) .012(0.30) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient V 105 140 V 150 200 V 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 100 120 200 150 1.0 30 TSTG Maximum Forward Voltage at 1.0A DC 13 30 .003(0.08) 56 70 12 20 0.50 0.70 0.85 0.9 0.92 0.5 .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .083(2.10) .110(2.80) Dimensions in inches and (millimeters) 10 V m Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D CORP WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. BAV70 FM120-M+ BAV99 THRU BAW56LT1 FM1200-M+ WILLAS SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE FeaturesInformation: Ordering • Batch process design, excellent power dissipation offers better reverse Device PN leakage current and thermal resistance. • Low profile surface mounted (1) (2) application in order to Part Number ‐T optimize board space. G ‐WS Package outline Packing SOD-123H Tape&Reel: 3 Kpcs/Reel 0.146(3.7) loss, high efficiency. • Low power Note: (1) Packing code, Tape&Reel Packing 0.130(3.3) • High current capability, low forward voltage drop. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” surge capability. • High • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant 0.040(1.0) 0.024(0.6) • Case : Molded plastic, SOD-123H , ***Disclaimer*** • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 WILLAS reserves the right to make changes without notice to any product Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. which may be included on WILLAS data sheets and/ or specifications can For capacitive load, derate current by 20% and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS WILLAS does not assume any liability arising out of the application or Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum use of any product or circuit. Recurrent Peak Reverse Voltage Vo VRRM Vo 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Vo Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Am Maximum WILLAS products are not designed, intended or authorized for use in medical, Average Forward Rectified Current IO 1.0 life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am superimposed on rated load (JEDEC method) applications where a failure or malfunction of component or circuitry may directly ℃/ 40 Typical Thermal Resistance (Note 2) RΘJA or indirectly cause injury or threaten a life without expressed written approval PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating of WILLAS. Customers using or selling WILLAS components for use in Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ such applications do so at their own risk and shall agree to fully indemnify WILLAS CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH Inc and its subsidiaries harmless against all claims, damages and expenditures . FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.