WILLAS FM120-M+ MMBD914LT1THRU High−Speed Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Features optimize board space. z RoHS product for packing code suffix "G" • Low power loss, high efficiency. free product for packing code voltage suffix "H" z Halogen capability, low forward drop. • High current z Moisture Sensitivity Level 1 capability. • High surge 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. • Guardring for overvoltage protection. MAXIMUM high-speed switching. • UltraRATINGS epitaxial planar chip, metal silicon junction. • Silicon Symbol Value Rating • Lead-free parts meet environmental standards of ReverseMIL-STD-19500 Voltage VR 100 /228 RoHS product for packing code suffix "G" • Forward Current IF 200 Halogen free product for packing code suffix "H" Peak Forward Surge Current IFM(surge) 500 0.071(1.8) 0.056(1.4) Unit Vdc SOT-23 mAdc mAdc Mechanical data 0.040(1.0) THERMAL CHARACTERISTICS • Epoxy : UL94-V0 rated flame retardant Characteristic Symbol Max Unit : Molded plastic, SOD-123H • Case Total Device Dissipation PD 225 mW, • Terminals :Plated terminals, solderable per MIL-STD-750 FR–5 Board (Note 1.) Method 2026 TA = 25°C Derate above 25°C • Polarity : Indicated by cathode band 1.8 0.031(0.8) Typ. 3 CATHODE 1 0.024(0.6) ANODE 0.031(0.8) Typ. MARKING DIAGRAM mW/°C Dimensions in inches and (millimeters) Thermal Resistance, RqJA 556 °C/W Position : Any • Mounting Junction to Ambient • Weight : Approximated 0.011 gram Total Device Dissipation PD 300 mW Alumina Substrate (Note 2.)RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM TA = 25°C Ratings at 25℃ 2.4 mW/°C Derate aboveambient 25°C temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. Thermal Resistance, RqJA 417 °C/W For Junction capacitive derate current by 20% to load, Ambient RATINGS Operating/Junction and Storage TJ, Tstg SYMBOL –55 toFM120-MH °C Marking Code 12 13 Temperature Range +150 20 30 Maximum Recurrent Peak Reverse Voltage VRRM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) 14 21 Maximum RMS Voltage VRMS Characteristic Symbol Min Max Unit Maximum DC Blocking Voltage 20 30 VDC 5D 5D = Device Code FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH OFF CHARACTERISTICS Maximum Average Forward Rectified Current IO Reverse Breakdown Voltage V(BR) 100 Peak (IForward mAdc)Current 8.3 ms single half sine-wave R = 100Surge IFSM superimposed on rated load (JEDEC method) Reverse Voltage Leakage Current Typical Resistance (Note 2) (VRThermal = 20 Vdc) = 75 Vdc) (VRJunction Typical Capacitance (Note 1) Operating Temperature Range Diode Capacitance (VRTemperature = 0, f = 1.0 MHz) Storage Range IR CT – – RΘJA 25 – CJ 5.0 – TJ TSTG 4.0 14 40 28 ORDERING 15 16 INFORMATION 18 10 50 60 80 100 Device Shipping 35 42Package56 70 40MMBD914LT1 50 120 200 105 140 60SOT−23 80 3000/Tape 100 & Reel150 200 1.0 30 Vdc nAdc mAdc 115 150 40 120 -55 to +125 pF -55 to +150 - 65 to +175 Forward Voltage VF – 1.0 Vdc SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH (IF = 10 mAdc)CHARACTERISTICS 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 Reverse Recovery Time trr – 4.0 ns 0.5 Maximum Average Reverse Current at @T A=25℃ (IF = IR = 10 mAdc) (Figure 1) IR 10 @T A=125℃ Rated DC =Blocking Voltage 1. FR–5 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD914LT1 THRU High−Speed Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline 820 Ω Features +10 V design, excellent power dissipation offers • Batch process 2k µF 0.1thermal better reverse leakage current and resistance. I IF t SOD-123H trr 10% optimize 0.1 µFboard space. • Low power loss, high efficiency. low forward voltage drop. • High current capability,DUT • High surge capability. 50 Ω OUTPUT 50 Ω INPUT PULSE • Guardring for overvoltage protection.SAMPLING GENERATOR OSCILLOSCOPE • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of tp tr F mounted application in order to 100 surface µH • Low profile t 0.146(3.7) 0.130(3.3) 90% iR(REC) = 1 mA IR VR 0.012(0.3) Typ. 0.071(1.8) OUTPUT PULSE 0.056(1.4) (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL MIL-STD-19500 /228 packing suffix "G" resistor adjusted for a Forward Current (IF) of 10 mA. • RoHS product forNotes: 1. Acode 2.0 kΩ variable Halogen free product code suffix "H"so IR(peak) is equal to 10 mA. Notes:for 2. packing Input pulse is adjusted Notes: 3. tp » trr Mechanical data Method 2026 TA = 85°Cby cathode band Polarity : Indicated 10 • • Mounting Position : Any • Weight : Approximated 0.011 gram TA = -40°C TA = 25°C Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 0.1 Marking0.2 Code TA = 150°C TA = 85°C 0.1 TA = 55°C 0.01 T = 25°C SYMBOL FM120-MH FM130-MH FM140-MH FM150-MHA FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS 0.001 13 0 30 VRRM 1.212 20 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 0.4 0.6 0.8 Figure 2. Forward Voltage Maximum Average Forward Rectified Current 0.68 Peak Forward Surge Current 8.3 ms single half sine-wave C D H DIODE CAPACITANCE (pF) superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) 0.64 Typical Junction Capacitance (Note 1) Operating Temperature Range Storage Temperature Range 1.0 CHARACTERISTICS @T A=125℃ 0.52 0 120 200 35 42 56 70 105 140 50 60 80 100 150 200 Figure 3. Leakage Current RΘJA 40 120 CJ -55 to +125 -55 to +150 - 65 to +175 TSTG SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 50115 150 1.0 30 TJ 0.60 20 16 30 18 4010 14 10 15 40 60VOLTAGE 80 VR50 H REVERSE (VOLTS) 100 IO IFSM Maximum Forward Voltage at 1.0A DC 0.56 NOTES: 0.031(0.8) Typ. Dimensions TA = 125°Cin inches and (millimeters) 1.0 Maximum Recurrent Peak VFH Reverse FORWARDVoltage VOLTAGE (VOLTS) 0.040(1.0) 0.024(0.6) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1.0 at 25℃ ambient temperature unless otherwise specified. Ratings I R H REVERSE CURRENT m( A) I FH FORWARD CURRENT (mA) 100 • Epoxy : UL94-V0 rated flame retardant Figure 1. Recovery Time Equivalent Test Circuit • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 10 0.50 0.70 0.9 0.92 0.5 IR 2.0 0.85 10 4.0 6.0 8.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. VRH REVERSE VOLTAGE (VOLTS) 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 Figure 4. Capacitance WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD914LT1THRU High−Speed Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. SOT-23 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. of • Lead-free parts meet environmental standards .122(3.10) 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) • RoHS product for packing code suffix "G" .106(2.70) Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) Mechanical data 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .008(0.20) .003(0.08) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code VRRM 12 20 13 30 Maximum RMS Voltage VRMS 14 21 28 Maximum DC Blocking Voltage VDC 20 30 40 IO Peak Forward Surge Current 8.3 ms single half sine-wave .020(0.50) IFSM Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) .012(0.30) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range 14 40 15 50 16 60 18 80 35 42 50 60 .055(1.40) .035(0.89) Maximum Recurrent Peak Reverse Voltage .004(0.10)MAX. 0.031(0.8) Typ. Dimensions in inches and (millimeters) .080(2.04) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .070(1.78) .083(2.10) .110(2.80) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 115 150 120 200 56 70 105 140 80 100 150 200 1.0 30 40 120 -55 to +125 -55 to +150 Dimensions TSTG in inches and (millimeters) Storage Temperature Range 10 100 - 65 to +175 CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD914LT1 THRU High−Speed Switching Diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) capability, low forward voltage drop. • High current Ordering Information: • High surge capability. Packing overvoltage protection. • Guardring forDevice PN (1) high-speed switching. • UltraMMBD914LT1 G ‐WS Tape&Reel: 3 Kpcs/Reel • Silicon epitaxial planar chip, metal silicon junction. Note: (1) Ro HS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" data Mechanical • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ***Disclaimer*** Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. WILLAS reserves the right to make changes without notice to any product For capacitive load, derate current by 20% specification herein, to make corrections, modifications, enhancements or other SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS Marking Code changes. WILLAS or anyone on its behalf assumes no responsibility or liability 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM for any errors or inaccuracies. Data sheet specifications and its information V 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS V Maximumcontained are intended to provide a product description only. "Typical" parameters DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC A Maximumwhich may be included on WILLAS data sheets and/ or specifications can Average Forward Rectified Current IO 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave and do vary in different applications and actual performance may vary over time. 30 IFSM A superimposed on rated load (JEDEC method) WILLAS does not assume any liability arising out of the application or ℃ 40 Typical Thermal Resistance (Note 2) RΘJA 120 Typical Junction Capacitance (Note 1) CJ use of any product or circuit. Operating Temperature Range TJ -55 to +125 -55 to +150 - 65 to +175 TSTG WILLAS products are not designed, intended or authorized for use in medical, CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U life‐saving implant or other applications intended for life‐sustaining or other related V 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximumapplications where a failure or malfunction of component or circuitry may directly Average Reverse Current at @T A=25℃ IR m 10 @T A=125℃ Rated DC Blocking Voltage or indirectly cause injury or threaten a life without expressed written approval NOTES: of WILLAS. Customers using or selling WILLAS components for use in 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermalsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures. Storage Temperature Range 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.