BAS16V(SOT 563)

WILLAS
FM120-M+
THRU
BAS16V
FM1200-M+
SOT-563 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
surface mounted application in order to
• Low profile
SWITCHING
DIODE
optimize board space.
FEATURES
• Low power loss, high efficiency.
current capability,
• High
z
Fast
Switching
Speed low forward voltage drop.
• High surge capability.
z
For
GeneralforPurpose
Switching Applications
overvoltage protection.
• Guardring
z
High
Conductance
high-speed switching.
• Ultra
planar
chip, metal silicon junction.
• Silicon epitaxial
z
Pb-Free
package
is available
• Lead-free parts meet environmental standards of
RoHS
product for/228
packing code suffix ”G”
MIL-STD-19500
RoHS
product
for
packing
code
suffix "G"
•
Halogen free product for
packing
code suffix “H”
z
SOT-563
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
5
6
4
1
Halogen free product for packing code suffix "H"
Moisture Sensitivity Level 1
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Marking:
KAM
: Molded plastic, SOD-123H
• Case
,
• Terminals :Plated terminals, solderable per MIL-STD-750
1
ina
ry
Method 2026
Maximum Ratings @Ta=25℃
• Polarity : Indicated by cathode band
Position : Any
• MountingParameter
• Weight : Approximated 0.011 gram
3
2
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Symbol
Limit
Unit
VRM
100
V
Non-Repetitive Peak Reverse Voltage
im
MAXIMUM
RATINGS
AND ELECTRICAL
CHARACTERISTICS
VRRM
Peak Repetitive
Peak Reverse
Voltage
Ratings at Peak
25℃ ambient
temperature
Working
Reverse
Voltage unless otherwise specified.
VRWM
Single
phase half
wave, 60Hz, resistive of inductive load. VR
DC
Blocking
Voltage
For capacitive load, derate current by 20%
RMS Reverse Voltage
RATINGS
VR(RMS)
53
V
IFM
300
mA
Pr
el
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Forward Continuous Current
Marking Code
75
AverageRecurrent
Rectified
Output
Current
Maximum
Peak
Reverse
Voltage
VRRM IO
12
20
13
30
14
200
40
15
50
16
60
18
80
mA
100
10
115
150
120
200
Vol
Peak Forward
Surge Current @t=1.0μs
Maximum
RMS Voltage
VRMS
14
21
28
2.0
35
42
56
70
105
140
Volt
Maximum DC Blocking Voltage
VDC
20
30
40
1.0
50
60
80
100
150
200
Volt
@t =1.0s
Maximum
Average Forward Rectified Current
Power Dissipation
Peak
Forward
Surge CurrentJunction
8.3 ms single
sine-wave
Thermal
Resistance
tohalf
Ambient
superimposed on rated load (JEDEC method)
Junction Temperature
Typical Thermal Resistance (Note 2)
Operating/Storage Temperature
IFSM
IO PD
R
IFSM θJA
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Tj
TSTG
1.0
30
150
833
150
40
120
-55~+150
-55 to +125
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Storage Temperature Range
A
TSTG
Am
mW
K/W
Am
℃
℃/W
℃
PF
-55 to +150
℃
- 65 to +175
℃
Parameter
CHARACTERISTICS
Symbol
Test conditions
Min FM180-MH
Max
Unit FM1200-MH UNI
FM120-MH FM130-MH
FM140-MH FM150-MH FM160-MH
FM1100-MH FM1150-MH
SYMBOL
VF
Maximum Forward Voltage at 1.0A DC
Reverse
breakdown
Maximum
Average
Reverse voltage
Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
Reverse voltage leakage current
NOTES:
0.50
V(BR)
IR
IR
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
IR= 100µA
VR=75V
VR=20V
Forward voltage
VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
Diode capacitance
CD
VR=0, f=1MHz
Reveres recovery time
trr
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
IF=IR=10mA,Irr=0.1×IR,
RL=100Ω
0.70
0.85
75
0.5
10
0.9
V
1
µA
25
nA
0.715
0.855
1
1.25
V
2
pF
4
ns
0.92
Vol
mAm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS16V
FM1200-M+
SOT-563
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Outline Drawing
SOT-563
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
.024(0.60)
.020(0.50)
.067(1.70)
suffix "G"
• RoHS product for packing code
Halogen free product for packing code suffix "H"
Mechanical data .059(1.50)
ina
ry
Method 2026
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Pr
el
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
.024(0.60)
.020(0.50)
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
Storage Temperature Range
13
30
14
40
21
28
30
40
.011(0.27)
.007(0.17)
15
50
16
60
CHARACTERISTICS
18
80
10
100
115
150
120
200
Volts
35
42
56
70
105
140
Volts
50
60
80
100
150
200
Volts
1.0
30
.007(0.16)
.003(0.08)
40
120
-55 to +125
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.031(0.8) Typ.
.067(1.70)
.059(1.50)
.043(1.10)
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
.051(1.30)
.012(0.30)
.004(0.10)
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmp
NOTES:
.067(1.70)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.059(1.50)
Dimensions in inches and (millimeters)
2012-06
2012-1
WILLAS ELECTRONIC
Rev.ACORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS16V
FM1200-M+
SOT-563 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Pb Free Product
Package outline
Features Information: Ordering
• Batch process design, excellent power dissipation offers
Device PN better reverse leakage
current and thermal resistance.
(1) (2) application in order to
surface mounted
• Low profileBAS16V‐T
G ‐WS optimize board space.
Packing SOD-123H
Tape&Reel: 3 Kpcs/Reel 0.146(3.7)
Note: (1)
Packing code, Tape&Reel Packing
loss, high efficiency.
• Low power
0.130(3.3)
• High current capability, low forward voltage drop.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • High surge capability.
• Guardring for overvoltage protection.
• Ultra
high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS
product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
0.040(1.0)
0.024(0.6)
ina
ry
• Case : Molded plastic, SOD-123H
***Disclaimer***
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Pr
el
im
WILLAS reserves the right to make changes without notice to any product Method 2026
Dimensions in inches and (millimeters)
• Polarity
: Indicated by cathode band
specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any
changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram
for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified.
which may be included on WILLAS data sheets and/ or specifications can Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
RATINGS
WILLAS does not assume any liability arising out of the application or Marking Code
12
13
14
15
16
18
10
115
120
use of any product or circuit. 20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak Reverse Voltage
Volts
VRRM
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS products are not designed, intended or authorized for use in medical, Amp
Maximum Average Forward Rectified Current
IO
1.0
life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
applications where a failure or malfunction of component or circuitry may directly superimposed
on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
or indirectly cause injury or threaten a life without expressed written approval PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
of WILLAS. Customers using or selling WILLAS components for use in Operating Temperature
Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures
. FM1100-MH FM1150-MH FM1200-MH UNIT
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
Volts
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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