WILLAS FM120-M+ THRU BAS16V FM1200-M+ SOT-563 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H surface mounted application in order to • Low profile SWITCHING DIODE optimize board space. FEATURES • Low power loss, high efficiency. current capability, • High z Fast Switching Speed low forward voltage drop. • High surge capability. z For GeneralforPurpose Switching Applications overvoltage protection. • Guardring z High Conductance high-speed switching. • Ultra planar chip, metal silicon junction. • Silicon epitaxial z Pb-Free package is available • Lead-free parts meet environmental standards of RoHS product for/228 packing code suffix ”G” MIL-STD-19500 RoHS product for packing code suffix "G" • Halogen free product for packing code suffix “H” z SOT-563 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 5 6 4 1 Halogen free product for packing code suffix "H" Moisture Sensitivity Level 1 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Marking: KAM : Molded plastic, SOD-123H • Case , • Terminals :Plated terminals, solderable per MIL-STD-750 1 ina ry Method 2026 Maximum Ratings @Ta=25℃ • Polarity : Indicated by cathode band Position : Any • MountingParameter • Weight : Approximated 0.011 gram 3 2 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) Symbol Limit Unit VRM 100 V Non-Repetitive Peak Reverse Voltage im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS VRRM Peak Repetitive Peak Reverse Voltage Ratings at Peak 25℃ ambient temperature Working Reverse Voltage unless otherwise specified. VRWM Single phase half wave, 60Hz, resistive of inductive load. VR DC Blocking Voltage For capacitive load, derate current by 20% RMS Reverse Voltage RATINGS VR(RMS) 53 V IFM 300 mA Pr el V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Forward Continuous Current Marking Code 75 AverageRecurrent Rectified Output Current Maximum Peak Reverse Voltage VRRM IO 12 20 13 30 14 200 40 15 50 16 60 18 80 mA 100 10 115 150 120 200 Vol Peak Forward Surge Current @t=1.0μs Maximum RMS Voltage VRMS 14 21 28 2.0 35 42 56 70 105 140 Volt Maximum DC Blocking Voltage VDC 20 30 40 1.0 50 60 80 100 150 200 Volt @t =1.0s Maximum Average Forward Rectified Current Power Dissipation Peak Forward Surge CurrentJunction 8.3 ms single sine-wave Thermal Resistance tohalf Ambient superimposed on rated load (JEDEC method) Junction Temperature Typical Thermal Resistance (Note 2) Operating/Storage Temperature IFSM IO PD R IFSM θJA RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Tj TSTG 1.0 30 150 833 150 40 120 -55~+150 -55 to +125 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Storage Temperature Range A TSTG Am mW K/W Am ℃ ℃/W ℃ PF -55 to +150 ℃ - 65 to +175 ℃ Parameter CHARACTERISTICS Symbol Test conditions Min FM180-MH Max Unit FM1200-MH UNI FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM1100-MH FM1150-MH SYMBOL VF Maximum Forward Voltage at 1.0A DC Reverse breakdown Maximum Average Reverse voltage Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ Reverse voltage leakage current NOTES: 0.50 V(BR) IR IR 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. IR= 100µA VR=75V VR=20V Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA Diode capacitance CD VR=0, f=1MHz Reveres recovery time trr 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 IF=IR=10mA,Irr=0.1×IR, RL=100Ω 0.70 0.85 75 0.5 10 0.9 V 1 µA 25 nA 0.715 0.855 1 1.25 V 2 pF 4 ns 0.92 Vol mAm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS16V FM1200-M+ SOT-563 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-563 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 .024(0.60) .020(0.50) .067(1.70) suffix "G" • RoHS product for packing code Halogen free product for packing code suffix "H" Mechanical data .059(1.50) ina ry Method 2026 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Pr el Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ .024(0.60) .020(0.50) Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 13 30 14 40 21 28 30 40 .011(0.27) .007(0.17) 15 50 16 60 CHARACTERISTICS 18 80 10 100 115 150 120 200 Volts 35 42 56 70 105 140 Volts 50 60 80 100 150 200 Volts 1.0 30 .007(0.16) .003(0.08) 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.031(0.8) Typ. .067(1.70) .059(1.50) .043(1.10) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .051(1.30) .012(0.30) .004(0.10) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: .067(1.70) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient .059(1.50) Dimensions in inches and (millimeters) 2012-06 2012-1 WILLAS ELECTRONIC Rev.ACORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BAS16V FM1200-M+ SOT-563 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Information: Ordering • Batch process design, excellent power dissipation offers Device PN better reverse leakage current and thermal resistance. (1) (2) application in order to surface mounted • Low profileBAS16V‐T G ‐WS optimize board space. Packing SOD-123H Tape&Reel: 3 Kpcs/Reel 0.146(3.7) Note: (1) Packing code, Tape&Reel Packing loss, high efficiency. • Low power 0.130(3.3) • High current capability, low forward voltage drop. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant 0.040(1.0) 0.024(0.6) ina ry • Case : Molded plastic, SOD-123H ***Disclaimer*** , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Pr el im WILLAS reserves the right to make changes without notice to any product Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified. which may be included on WILLAS data sheets and/ or specifications can Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI RATINGS WILLAS does not assume any liability arising out of the application or Marking Code 12 13 14 15 16 18 10 115 120 use of any product or circuit. 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage V RMS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS products are not designed, intended or authorized for use in medical, Amp Maximum Average Forward Rectified Current IO 1.0 life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amp applications where a failure or malfunction of component or circuitry may directly superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA or indirectly cause injury or threaten a life without expressed written approval PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 of WILLAS. Customers using or selling WILLAS components for use in Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures . FM1100-MH FM1150-MH FM1200-MH UNIT CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.