WILLAS FM120-M+ MMBD4448VTHRU SOT-563 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SWITCHING DIODE • Low profile surface mounted application in order to FEATURES optimize board space. Low power loss, high efficiency. • z Fast switching speed • High current capability, low forward voltage drop. z High conductance surge capability. • High for overvoltage protection. • Guardring Pb-Free package is available z Ultra high-speed switching. • RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of z SOT-563 SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 Moisture Sensitivity Level 1 6 5 4 1 2 30.024(0.6) • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data Parameter 0.040(1.0) ina ry MARKING: KAL : UL94-V0 rated flame retardant • Epoxy • Case : Molded plastic, SOD-123H Maximum Ratings @Ta=25℃ , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 0.031(0.8) Typ. Symbol • Polarity : Indicated by cathode band Non-Repetitive Peak Reverse Voltage • Mounting Position : Any RMS Reverse Voltage • Weight : Approximated 0.011 gram 0.031(0.8) Typ. Limit Unit Dimensions in inches and (millimeters) VRM 100 V VR(RMS) 57 V im VRRM Peak Repetitive Peak Reverse Voltage RATINGS AND ELECTRICAL CHARACTERISTICS 80 VRWM Working PeakMAXIMUM Reverse Voltage Ratings at 25℃Voltage ambient temperature unless otherwise specified. DC Blocking VR Single phase half wave, 60Hz, resistive of inductive load. Average Rectified Output Current RATINGS IFSM V RRM 12 20 13 30 14 40 15 4.0 Maximum Recurrent Peak Reverse Voltage 50 16 60 18 80 10 100 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 Thermal Resistance Junction to Maximum Average Forward Rectified Current IO RθJA @t =1.0s Pd Power Dissipation Ambient Peak Forward Surge Current 8.3 ms single half sine-wave Storage Temperature superimposed on rated load (JEDEC method) TSTG Symbol Min Typ Unit 120 200 Vol 105 140 Vol 150 200 Vol mW Am Am ℃ ℃/W PF -55 to +150 Max 115 ℃ - 65 to +175 Conditions ℃ Reverse breakdown voltage CHARACTERISTICS 80 FM130-MH FM140-MH FM150-MH V(BR) FM120-MH V FM160-MH FM180-MH IR=2.5μA FM1100-MH FM1150-MH FM1200-MH UN SYMBOL Maximum Forward Voltage at 1.0A DC VF VF1 Maximum Average Reverse Current at @T A=25℃ -55 to +125 TJ Storage Temperature Range Parameter 40 120 A 150 ℃/W 1.0 30 833 CJ Operating Temperature Range 150 -55 ~+150 RΘJA Typical Junction Capacitance (Note 1) Electrical Ratings @Ta=25℃ 1.5 T IFSM TSTG Typical Thermal Resistance (Note 2) mA 250 IO FM160-MH FM180-MH FM1100-MHmA FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH MarkingForward Code Peak Surge Current @t=1.0μs 500 IFM Pr el Forward Continuous Current For capacitive load, derate current by 20% V 0.62 0.50 0.72 V0.70 0.5 0.85 I =5mA F VF2IR 0.855 V VF3 1.0 V IF=100mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. VF4 1.25 V IF=150mA 2- Thermal Resistance From Junction to Ambient IR1 0.1 μA VR=70V IR2 25 nA VR=20V Capacitance between terminals CT 3.5 pF VR=6V,f=1MHz Reverse recovery time trr 4 ns VR=6V, IF=5mA Rated DC Blocking Voltage Forward voltage @T A=125℃ NOTES: Reverse current 2012-06 2012-1 10 0.9 0.92 Vol IF=10mA mAm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4448V THRU FM1200-M+ SOT-563 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Outline Drawing SOT-563 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 .024(0.60) .020(0.50) .067(1.70) suffix "G" • RoHS product for packing code Halogen free product for packing code suffix "H" Mechanical data .059(1.50) ina ry Method 2026 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Pr el Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 Maximum RMS Voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM RΘJA Typical Thermal Resistance (Note 2) CJ .024(0.60) .020(0.50) Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 13 30 14 40 21 28 .011(0.27) 30 40 .007(0.17) 15 50 16 60 CHARACTERISTICS 18 80 10 100 115 150 120 200 Volts 35 42 56 70 105 140 Volts 50 60 80 100 150 200 Volts 1.0 30 .007(0.16) .003(0.08) 40 120 -55 to +125 Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.031(0.8) Typ. .067(1.70) .059(1.50) .043(1.10) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .051(1.30) .012(0.30) .004(0.10) 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: .067(1.70) 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient .059(1.50) Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.ACORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS SOT-563 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ THRU MMBD4448V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. Device PN Packing protection. • Guardring for overvoltage (1) (2) 0.071(1.8) switching. • Ultra high-speed MMBD4448V‐T G ‐WS Tape&Reel: 3 Kpcs/Reel 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. Note: (1) parts Packing code, Tape & Reel Packing meet environmental standards of • Lead-free MIL-STD-19500 /228 (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. changes. WILLAS or anyone on its behalf assumes no responsibility or liability For capacitive load, derate current by 20% for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Code contained are intended to provide a product description only. "Typical" parameters 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM which may be included on WILLAS data sheets and/ or specifications can Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC Amps Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave use of any product or circuit. 30 IFSM Amps superimposed on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ WILLAS products are not designed, intended or authorized for use in medical, -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175 Storage Temperature Range TSTG ℃ applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT or indirectly cause injury or threaten a life without expressed written approval Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 0.5 Maximum Average Reverse Current at @T A=25℃ of WILLAS. Customers using or selling WILLAS components for use in IR mAmps 10 @T A=125℃ Rated DC Blocking Voltage such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Pr el im MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.