WILLAS FM120-M+ 1N914B 500mA SMALL SIGNAL SWITCHING DIODE - 75V 1.0A SURFACE MOUNT SCHOTTKY DO-35 PACKAGE BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE THRU FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers 1N914B SIGNAL DIODE better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. for overvoltage protection. • Guardring Absolute Maximum Ratings (Ta=25°C) • Ultra high-speed switching. Items Symbol Ratings Unit • Silicon epitaxial planar chip, metal silicon junction. Reverse Voltage VR 75 V parts meet environmental standards of • Lead-free Reverse Recovery /228 trr 4 ns MIL-STD-19500 • RoHS product for packing code suffix "G" Time Halogen free product for packing code500 suffix "H" mW Power Dissipation P Mechanical data 25 C ( ) 3.33mW/ C ° ° : UL94-V0 rated IF flame retardant • EpoxyCurrent Forward 300 mA Junction Tj -55 to 150 °C : Molded plastic, SOD-123H • Case Temp. , Tstg solderable -55 to 150 2SHUDWLQJStorage °C • Terminals :Plated terminals, per MIL-STD-750 0.146(3.7) 0.130(3.3) Dimensions (DO-35) 0.071(1.8) 0.056(1.4) .022(0.55) .018(0.45) 1.02(26.0) MIN. 0.040(1.0) 0.024(0.6) .153(3.6) 0.031(0.8) Typ. .132(3.0) 0.031(0.8) Typ. Method 2026 .087(2.2) .067(1.7) Mechanical • Polarity : Data Indicated by cathode band Items Materials : Any • Mounting Position Package DO-35 • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) 1.02(26.0) MIN. Case Hermetically sealed glass Lead/FinishMAXIMUM Double stud/Solder RATINGS Plating AND ELECTRICAL CHARACTERISTICS Chip Glass Passivated 0.012(0.3) Typ. Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Unit: inch (mm) Moisture Sensitivity Level 1 Polarity: Color band denotes cathode end Electrical Characteristics (Ta=25°C) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS Marking Code 12 13 14Symbol 15 16 Ratings 18 10 115 120 Ratings Unit 20 30 40 BV 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Minimum Breakdown Voltage V Volts 14 21 28 35 42 56 70 105 140 Maximum Voltage VRMS IR=RMS 5.0uA 75 Volts Maximum Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC IR=DC100uA 100 Amps PeakAverage Forward Surge Current IFsurge A Maximum Forward Rectified CurrentPW= 1sec.IO 1.0 0.5 Maximum Forward Voltage VF V Peak Forward Surge Current 8.3 ms single half sine-wave 30 1.0 IFSM Amps IF= 100mA superimposed on rated load (JEDEC method) Maximum Reverse Current IR uA ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA VR= 20V 0.025 PF 120 Typical Junction Capacitance (Note 1) CJ VR= 75V 5.0 -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ VR= 20V, Tj= 150 C 50 - 65 to +175 Storage Temperature Range ° TSTG ℃ Maximum Junction Capacitance Cj pF VR= 0, f= CHARACTERISTICS 1 MHz 4 FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH Maximum Recovery Time trr ns Volts 0.9 Maximum ForwardReverse Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 IF=Average 10mA, VR= Current 6V, IRR= 1mA, RL= 100Ω 4 0.5 Maximum Reverse at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2010-03 WILLAS ELECTRONIC CORP. mAmps WILLAS FM120-M+ Electrical characteristic curves (Ta = 25°C unless specified otherwise) Package Features THRU 1N914B 500mA SMALL SIGNAL SWITCHING DIODE - 75V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V DO-35 PACKAGE SOD-123+ PACKAGE FM1200-M+ Pb Free Product outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Maximum Recurrent Peak Reverse Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 1.0 30 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 2010-03 @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient IR 0.50 0.70 0.85 0.9 0.5 10 WILLAS ELECTRONIC CORP. 0.92 Volts mAmps WILLAS FM120-M+ 1N914B 500mA SMALL SIGNAL SWITCHING DIODE - 75V DO-35 PACKAGE 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE THRU FM1200-M+ Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H mounted application in order to • Low profile surface Ordering Information: optimize board space. Packing 0.146(3.7) high efficiency. • Low power loss,Device PN 0.130(3.3) capability,(1)low(2)forward voltage drop. • High current 1N914B‐T G ‐WS Tape & Ammo Pack box:5Kpcs/box • High surge capability. Note: (1) Packing code, Tape & Ammo Pack box for overvoltage protection. • Guardring • Ultra high-speed switching. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified. specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volt VRRM contained are intended to provide a product description only. "Typical" parameters Volt 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Volt Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Am Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Am superimposed on rated load (JEDEC method) use of any product or circuit. ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175 Storage Temperature Range TSTG ℃ life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI applications where a failure or malfunction of component or circuitry may directly Volt 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAm 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient 2010-03 2012-06 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.