1N914B(DO 35)

WILLAS
FM120-M+
1N914B
500mA SMALL SIGNAL SWITCHING DIODE - 75V
1.0A SURFACE MOUNT SCHOTTKY
DO-35
PACKAGE
BARRIER
RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
THRU
FM1200-M+
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
1N914B SIGNAL DIODE
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
for overvoltage
protection.
• Guardring
Absolute
Maximum
Ratings
(Ta=25°C)
• Ultra high-speed switching.
Items
Symbol
Ratings Unit
• Silicon epitaxial planar chip, metal silicon junction.
Reverse
Voltage
VR
75
V
parts meet environmental standards of
• Lead-free
Reverse
Recovery /228 trr
4
ns
MIL-STD-19500
• RoHS product for packing code suffix "G"
Time
Halogen
free product for packing
code500
suffix "H" mW
Power
Dissipation
P
Mechanical
data
25
C
(
)
3.33mW/
C
°
°
: UL94-V0 rated IF
flame retardant
• EpoxyCurrent
Forward
300
mA
Junction
Tj
-55 to 150 °C
: Molded plastic, SOD-123H
• Case Temp.
,
Tstg solderable
-55 to 150
2SHUDWLQJStorage
°C
• Terminals :Plated terminals,
per MIL-STD-750
0.146(3.7)
0.130(3.3)
Dimensions (DO-35)
0.071(1.8)
0.056(1.4)
.022(0.55)
.018(0.45)
1.02(26.0)
MIN.
0.040(1.0)
0.024(0.6)
.153(3.6)
0.031(0.8) Typ.
.132(3.0)
0.031(0.8) Typ.
Method 2026
.087(2.2)
.067(1.7)
Mechanical
• Polarity : Data
Indicated by cathode band
Items
Materials
: Any
• Mounting Position
Package
DO-35
• Weight : Approximated
0.011 gram
Dimensions in inches and (millimeters)
1.02(26.0)
MIN.
Case
Hermetically sealed glass
Lead/FinishMAXIMUM
Double stud/Solder
RATINGS Plating
AND ELECTRICAL CHARACTERISTICS
Chip
Glass Passivated
0.012(0.3) Typ.
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Unit: inch (mm)
Moisture Sensitivity Level 1
Polarity: Color band denotes cathode end
Electrical Characteristics
(Ta=25°C) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
Marking
Code
12
13
14Symbol
15
16 Ratings
18
10
115
120
Ratings
Unit
20
30
40 BV 50
60
80
100
150
200
Maximum
Recurrent
Peak Reverse
Voltage
Volts
VRRM
Minimum
Breakdown
Voltage
V
Volts
14
21
28
35
42
56
70
105
140
Maximum
Voltage
VRMS
IR=RMS
5.0uA
75
Volts
Maximum
Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
IR=DC100uA
100
Amps
PeakAverage
Forward
Surge
Current
IFsurge
A
Maximum
Forward
Rectified
CurrentPW= 1sec.IO
1.0 0.5
Maximum Forward Voltage
VF
V
Peak Forward Surge Current 8.3 ms single half sine-wave
30 1.0
IFSM
Amps
IF= 100mA
superimposed on rated load (JEDEC method)
Maximum Reverse Current
IR
uA
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
VR= 20V
0.025
PF
120
Typical Junction Capacitance (Note 1)
CJ
VR=
75V
5.0
-55
to
+125
-55
to
+150
Operating Temperature Range
TJ
℃
VR= 20V, Tj= 150 C
50
- 65 to +175
Storage Temperature Range °
TSTG
℃
Maximum Junction Capacitance
Cj
pF
VR= 0, f= CHARACTERISTICS
1 MHz
4
FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
Maximum
Recovery
Time
trr
ns
Volts
0.9
Maximum
ForwardReverse
Voltage at 1.0A
DC
0.92
VF
0.50
0.70
0.85
IF=Average
10mA,
VR= Current
6V, IRR=
1mA,
RL= 100Ω
4
0.5
Maximum
Reverse
at @T
A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2010-03
WILLAS ELECTRONIC CORP.
mAmps
WILLAS
FM120-M+
Electrical characteristic curves (Ta = 25°C unless specified otherwise)
Package
Features
THRU
1N914B
500mA SMALL SIGNAL SWITCHING DIODE - 75V
1.0A SURFACE MOUNT SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
DO-35
PACKAGE
SOD-123+ PACKAGE
FM1200-M+
Pb Free Product
outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Maximum Average Forward Rectified Current
IO
IFSM
Maximum Recurrent Peak Reverse Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
Amps
Amps
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
2010-03
@T A=125℃
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
IR
0.50
0.70
0.85
0.9
0.5
10
WILLAS ELECTRONIC CORP.
0.92
Volts
mAmps
WILLAS
FM120-M+
1N914B
500mA SMALL SIGNAL SWITCHING DIODE - 75V
DO-35
PACKAGE
1.0A SURFACE MOUNT SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
THRU
FM1200-M+
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
mounted application
in order to
• Low profile surface
Ordering
Information:
optimize board space.
Packing 0.146(3.7)
high efficiency.
• Low power loss,Device PN 0.130(3.3)
capability,(1)low(2)forward voltage drop.
• High current
1N914B‐T
G ‐WS Tape & Ammo Pack box:5Kpcs/box • High surge capability.
Note: (1)
Packing code, Tape & Ammo Pack box
for overvoltage protection.
• Guardring
• Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase
half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak Reverse Voltage
Volt
VRRM
contained are intended to provide a product description only. "Typical" parameters Volt
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Volt
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Am
Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
superimposed
on rated load (JEDEC method)
use of any product or circuit. ℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature
Range
TJ
℃
WILLAS products are not designed, intended or authorized for use in medical, - 65 to +175
Storage Temperature Range
TSTG
℃
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
applications where a failure or malfunction of component or circuitry may directly Volt
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAm
10
@T A=125℃
Rated DC Blocking
Voltage
of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient
2010-03
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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