WILLAS FM120-M+ MM4148,MM4448THRU Mini Melf Switching diode FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Features optimize board space. • Low power loss, high efficiency. current capability, low forward voltage drop. • High D Electrical data identical with the devices surge capability. • High 1N4148 and 1N4448 respectively • Guardring for overvoltage protection. high-speed switching. • Ultra D Weight:0.03g • Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of • Applications 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Extreme fast switches Halogen free product for packing code suffix "H" Moisture Sensitivity Level 1 Mechanical data Polarity: Color band denotes cathode end 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Maximum Ratings Dimensions in inches and (millimeters) • Absolute Polarity : Indicated by cathode band • TMounting j = 25_CPosition : Any • Weight : Approximated 0.011 gram Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage V 100 V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RRM voltage VR 75 V Ratings atReverse 25℃ ambient temperature unless otherwise specified. Single phase wave, 60Hz, Peakhalf forward surge resistive current of inductivetload. =1 m s I 2 A p FSM For capacitive load, derate current by 20% Repetitive peak forward current IFRM 500 mA FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH SYMBOL FM120-MH RATINGS Forward current IF 300 mA FM1200-MH UNIT Marking Code 12 13 14 15 16 18 10 115 120 Average forward current VR=0 IFAV 150 mA 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Power dissipation PV 500 mW Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Operating junction temperature Tj60 -55~150 °C Volts Maximum DC Blocking Voltage 20 30 40 50 80 100 150 200 VDC Storage temperature range T -55~150 ° C stg 1.0 Amps Maximum Average Forward Rectified Current IO Peak Forward Surge Current 8.3 ms single half sine-wave Maximum Thermal Resistance superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) T = 25_C j Typical Junction Capacitance (Note 1) CJ TJ Operating Temperature Range Parameter CHARACTERISTICS 40 120 -55 to +125 Amps ℃/W -55 to +150 Symbol Value - 65 to +175 RthJA 500 PF ℃ Unit K/W ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage TSTG Junction ambient 30 Test Conditions on PC board 50mmx50mmx1.6mm Storage Temperature Range IFSM @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-10 2012-06 WILLAS ELEECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MM4148,MM4448THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Characteristics SOD-123+ PACKAGE Tj = 25_C Pb Free Product PackageMin outline Symbol Typ Max VF 0.62 0.72 SOD-123H 1 VF 0.86 VF 0.93 1 0.146(3.7) IR 25 0.130(3.3) IR 50 IR 5 V(BR) 100 Parameter Features Test Conditions Type process • Batchvoltage Forward g design, Iexcellent MM4448 F=5mA power dissipation offers better reverse leakage current and thermal resistance. MM4148 IF= 50mA • Low profile surface mounted application in order to MM4448 optimize board space. IF=100mA Low power loss, high efficiency. • VR=20V Reverse current • High current capability, low forward voltage drop. V =20V, Tj=150°C • High surge capability. R VR=75V protection. • Guardring for overvoltage • Ultra high-speed Breakdown voltage switching. IR=100mA, tp/T=0.01, metal silicon junction. • Silicon epitaxial planartpchip, =0.3ms Lead-free parts meet environmental standards of • Diode capacitance VR=0, f=1MHz, MIL-STD-19500 /228 HF=50mV suffix "G" • RoHS product for packingVcode Rectification efficiency f=100MHz Halogen free product for V packing code suffix "H" HF=2V, Mechanical data IF=IR=10mA, iR=1mA Reverse recovery y time retardant • Epoxy : UL94-V0 ratedIflame VR=6V, F=10mA, i =0.1xI , R R • Case : Molded plastic, SOD-123H RL=100 , • Terminals :Plated terminals, solderable per MIL-STD-750 CD hr W 4 pF 8 4 % ns 0.040(1.0) 0.024(0.6) ns 45 trr trr Unit V V V nA 0.012(0.3) Typ. mA mA 0.071(1.8) V 0.056(1.4) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 Typical Characteristics (Tj = 25_C unless otherwise specified) 100 MM4448 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase10 half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS VRRM Tj = 25°C VRMS Maximum RMS Voltage 0.1 Maximum DC Blocking Voltage 0 0.4 0.8 1.2 1.6 VDC 2.0 IO Peak ForwardFigure Surge Current 8.3 msCurrent single half 1. Forward vs.sine-wave Forward Voltage IFSM Maximum Average Forward Rectified Current 94 9096 VF – Forward Voltage ( V ) 12 20 13 30 14 21 20 30 Operating Temperature Range TJ Storage TemperatureTjRange = 25°C TSTG IR – Reverse Current ( nA ) CJ CHARACTERISTICS NOTES: @T A=125℃ 2- Thermal Resistance From Junction to Ambient 1 1 94 9098 2012-06 60 0.8 1.2 80 40 120 f = 1 MHz Tj =to25°C - 65 +175 1.6 100 2.0 115 150 120 200 Volts 105 140 Volts 150 200 Volts Amps Amps ℃/W PF -55 to +150 ℃ ℃ 2.0 0.501.5 IR 10 VR – Reverse Voltage ( V ) 0.70 0.9 0.85 0.5 0.92 Volts mAmp 10 1.0 0.5 0 100 Figure 3. Reverse Current vs. Reverse Voltage 2012-10 50 0.4 -55 to +125 2.5 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 42 3.0 VF Maximum Average Reverse Current at @T A=25℃ 35 18 10 80 100 Tj = 25°C 70 56 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC 10 Voltage Rated DC Blocking 16 60 1.0Voltage ( V ) VF – Forward Figure 2. Forward Current 30vs. Forward Voltage CD – Diode Capacitance ( pF ) 1000 Typical Junction Capacitance (Note 1) 15 50 94 9097 RΘJA Typical Thermal Resistance (Note 2) 1 14 40 28 0.1 400 superimposed on rated load (JEDEC method) 100 10 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Recurrent Peak Reverse Voltage 100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Marking Code 1 Dimensions in inches and (millimeters) 1000 IF – Forward Current ( mA ) IF – Forward Current ( mA ) • Polarity : Indicated by cathode band 1000 Position : Any • Mounting MM4148 • Weight : Approximated 0.011 gram 94 9099 0.1 1 10 100 VR – Reverse Voltage ( V ) Figure 4. Diode Capacitance vs. Reverse Voltage WILLAS ELEECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MM4148,MM4448 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline POWER DISSIPATION, mW Features • Batch process design, excellent power dissipation offers 500 resistance. better reverse leakage current and thermal • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. 300 • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 100 • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. 0 100 of • Lead-free parts meet environmental standards MIL-STD-19500 /228 AMBIENT TEMPERATURE • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Figure 5. Derating Curve SOD-123H 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 200 Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band Dimensions in mm • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Volts Maximum Average Forward Rectified Current IO IFSM Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range 0.4 1.0 30 0.1 40 120 -55 to +125 Amps Amps ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-10 2012-06 WILLAS ELEECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MM4148,MM4448 THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Ordering Information: • Batch process design, excellent power dissipation offers Device PN better reverse leakage current and thermal resistance. (1) application surface mounted • Low profileMM4448‐T G(2)‐ WS in order to optimize board space. Packing SOD-123H Tape&Reel: 2.5 Kpcs/Reel 0.146(3.7) Low power loss, high efficiency. •Note: (1) Packing code, Tape&Reel Packing 0.130(3.3) • High current capability, low forward voltage drop. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. ***Disclaimer*** , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. WILLAS reserves the right to make changes without notice to any product Method 2026 Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band specification herein, to make corrections, modifications, enhancements or other • Mounting Position : Any changes. WILLAS or anyone on its behalf assumes no responsibility or liability • Weight : Approximated 0.011 gram for any errors or inaccuracies. Data sheet specifications and its information MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS contained are intended to provide a product description only. "Typical" parameters Ratings at 25℃ ambient temperature unless otherwise specified. which may be included on WILLAS data sheets and/ or specifications can Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% and do vary in different applications and actual performance may vary over time. SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS WILLAS does not assume any liability arising out of the application or Marking Code 12 13 14 15 16 18 10 115 120 use of any product or circuit. 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC WILLAS products are not designed, intended or authorized for use in medical, Amps Maximum Average Forward Rectified Current IO 1.0 life‐saving implant or other applications intended for life‐sustaining or other related Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amps superimposedapplications where a failure or malfunction of component or circuitry may directly on rated load (JEDEC method) ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA or indirectly cause injury or threaten a life without expressed written approval PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 of WILLAS. Customers using or selling WILLAS components for use in Operating Temperature Range TJ ℃ - 65 to +175 Storage Temperature Range TSTG ℃ such applications do so at their own risk and shall agree to fully indemnify WILLAS FM1150-MH FM1200-MH UNIT Inc and its subsidiaries harmless against all claims, damages and expenditures CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH.FM1100-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ NOTES: IR 0.50 0.70 0.85 0.9 0.92 0.5 10 Volts mAmps 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-10 2012-06 WILLAS ELEECTRONIC CORP. WILLAS ELECTRONIC CORP.