New Product Si4190DY Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 18.3 nC APPLICATIONS • DC/DC Primary Side Switch • Telecom/Server • Industrial SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D G Top View S Ordering Information: Si4190DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) 16 ID TA = 25 °C 13.4b, c 10.6b, c TA = 70 °C IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C 7.0 3.1b, c 30 IAS EAS 7.8 TC = 70 °C 5.0 PD TA = 25 °C W 3.5b, c 2.2b, c TA = 70 °C Operating Junction and Storage Temperature Range mJ 45 TC = 25 °C Maximum Power Dissipation A 70 IS TA = 25 °C L = 0.1 mH V 20 TC = 70 °C Pulsed Drain Current Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter b, d Maximum Junction-to-Ambient t 10 s Maximum Junction-to-Foot (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 80 °C/W. Document Number: 66595 S10-2686-Rev. C, 22-Nov-10 Symbol Typical Maximum RthJA 29 35 RthJF 13 16 Unit °C/W www.vishay.com 1 New Product Si4190DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage V 47 ID = 250 µA mV/°C - 5.8 VGS(th) VDS = VGS , ID = 250 µA 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V 1.2 30 µA A VGS 10 V, ID = 15 A 0.0073 0.0088 VGS 4.5 V, ID = 10 A 0.0093 0.0120 VDS = 15 V, ID = 15 A 58 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance 2000 VDS = 50 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time VDS = 50 V, VGS = 10 V, ID = 10 A 58 28 5.4 VDS = 50 V, VGS = 4.5 V, ID = 10 A nC 7.3 f = 1 MHz VDD = 50 V, RL = 5 ID 10 A, VGEN = 7.5 V, Rg = 1 0.6 2.7 5.4 12 24 13 26 40 70 11 22 td(on) 10 20 10 20 40 70 11 22 td(off) VDD = 50 V, RL = 5 ID 10 A, VGEN = 10 V, Rg = 1 tf Fall Time 38.6 18.3 tf tr Rise Time Turn-Off Delay Time pF 56 td(on) Turn-On Delay Time 1120 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 7.0 ISM VSD 70 IS = 5 A 0.75 1.1 A V Body Diode Reverse Recovery Time trr 51 100 ns Body Diode Reverse Recovery Charge Qrr 51 100 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 24 27 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 66595 S10-2686-Rev. C, 22-Nov-10 New Product Si4190DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 56 42 28 6 TC = 25 °C 4 TC = 125 °C VGS = 3 V 14 2 0 0 1 2 3 4 5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.011 3500 0.010 2800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = - 55 °C 0 VGS = 4.5 V 0.009 0.008 VGS = 10 V 5 Ciss 2100 1400 Coss 700 0.007 Crss 0 0.006 0 14 28 42 56 0 70 20 40 80 100 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 10 2.0 ID = 10 A ID = 15 A 8 VGS = 10 V VDS = 25 V 6 VDS = 50 V 4 VDS = 75 V 2 (Normalized) 1.7 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 60 1.4 VGS = 4.5 V 1.1 0.8 0 0 8 16 24 Qg - Total Gate Charge (nC) Gate Charge Document Number: 66595 S10-2686-Rev. C, 22-Nov-10 32 40 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4190DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.05 ID = 15 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0.04 0.03 0.02 TJ = 125 °C 0.01 0.01 0.001 0 TJ = 25 °C 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 200 0.2 0 Power (W) VGS(th) Variance (V) 160 - 0.2 ID = 5 mA 120 80 - 0.4 ID = 250 μA - 0.6 - 0.8 - 50 - 25 0 25 50 75 40 100 125 0 0 .0 0 1 150 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 0.1 1s 10 s TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 66595 S10-2686-Rev. C, 22-Nov-10 New Product Si4190DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 ID - Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 10 2.0 8 1.6 6 1.2 Power (W) Power (W) Current Derating* 4 2 0.8 0.4 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Foot 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66595 S10-2686-Rev. C, 22-Nov-10 www.vishay.com 5 New Product Si4190DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 80 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66595. www.vishay.com 6 Document Number: 66595 S10-2686-Rev. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000