BFR193T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR193T Marking RCs 1=B Pin Configuration 2=E 3=C Package SC75 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 80 Base current IB 10 Total power dissipation Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 RthJS 210 Value Unit V mA TS 91 °C 1) Thermal Resistance Junction - soldering point 2) K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-09-2001 BFR193T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 30 mA, VCE = 8 V 2 Aug-09-2001 BFR193T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 6 7.5 - GHz Ccb - 0.68 1 pF Cce - 0.24 - Ceb - 1.8 - AC characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 10 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.3 - f = 1.8 GHz - 2.1 - IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 16.5 - f = 1.8 GHz - 10.5 - - 13.5 - - 8 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Aug-09-2001 BFR193T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.2738 fA BF = 125 - NF = 0.95341 - VAF = 24 V IKF = 0.26949 A ISE = 10.627 fA NE = 1.935 - BR = 14.267 - NR = 1.4289 - VAR = 3.8742 V IKR = 0.037925 A ISC = 0.037409 fA NC = 0.94371 - RB = 1.8368 IRB = 0.91763 mA RBM = 1 RE = 0.76534 RC = 0.11938 CJE = 1.1824 fF VJE = 0.70276 V MJE = 0.48654 - TF = 18.828 ps XTF = 0.69477 - VTF = 0.8 V ITF = 0.96893 mA PTF = 0 deg CJC = 935.03 fF VJC = 1.1828 V MJC = 0.30002 - XCJC = 0.053563 - TR = 1.0037 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.1 eV XTI = 3 - FC = 0.72063 - TNOM 300 K L BI = 0.762 nH L BO = 0.706 nH L EI = 0.382 nH L EO = 62 fF L CI = 84 fF L CO = 180 fF C BE = 7 C CB = 40 fF C CE = 48 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 C5 C3 E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001 BFR193T Total power dissipation Ptot = f (TS ) 300 P tot mW 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC RthJS 10 3 10 2 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Aug-09-2001 BFR193T Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 9 1.2 8V GHz 5V pF 6 0.8 fT Ccb 7 5 3V 0.6 4 2V 0.4 3 1V 2 0.7V 0.2 1 0 0 5 10 V 15 0 0 25 10 20 30 40 50 60 VCB 70 mA 90 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 15 19 dB 8V dB 5V 8V 5V G ma 15 G 3V 13 9 3V 2V 11 2V 6 9 3 1V 1V 7 0.7V 5 0 10 20 30 40 50 60 70 mA 0.7V 0 0 90 IC 10 20 30 40 50 60 70 mA 90 IC 6 Aug-09-2001 BFR193T Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 20 35 IC=30mA dB 0.9GHz 8V dBm 5V 16 0.9GHz IP 3 G 14 1.8GHz 12 3V 25 10 1.8GHz 2V 8 20 6 4 1V 15 2 0 0 1 2 3 4 5 6 7 V 10 0 9 10 20 30 mA 40 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 45 36 IC=30mA dB 60 IC =30mA dBm 35 24 G S21 30 25 18 20 12 15 6 10 8V 8V 5V 1V 5 0 0 1 2 3 4 5 GHz 0 -6 0 7 f 5V 1V 1 2 3 4 5 GHz 7 f 7 Aug-09-2001