IPP050N06N G OptiMOS™ Power-Transistor IPB050N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS(on),max SMDversion ID 60 V 4.7 mΩ 100 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant • Halogen-free according to IEC61249-2-21 Type IPP050N06N IPB050N06N Package P-TO220-3 P-TO263-3 Marking 050N06N 050N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C1) 100 T C=100 °C 100 Pulsed drain current I D,pulse T C=25 °C2) 400 Avalanche energy, single pulse E AS I D=100 A, R GS=25 Ω 810 Reverse diode dv /dt dv /dt I D=100 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 A mJ kV/µs ±20 V 300 W -55 ... 175 °C 55/175/56 1) Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 160A 2) See figure 3 Rev. 1.16 Unit page 1 2010-01-14 IPP050N06N G Parameter IPB050N06N G Values Symbol Conditions Unit min. typ. max. - - 0.5 minimal footprint - - 62 6 cm2 cooling area3) - - 40 60 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=270 µA 2.1 3 4 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=100 A - 4.1 5 mΩ 3.8 4.7 - 1.9 - Ω 74 148 - S V GS=10 V, I D=100 A, SMD version Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=100 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.16 page 2 2010-01-14 IPP050N06N G Parameter IPB050N06N G Values Symbol Conditions Unit min. typ. max. - 4600 6100 - 1500 2000 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 350 525 Turn-on delay time t d(on) - 21 32 Rise time tr - 31 47 Turn-off delay time t d(off) - 59 88 Fall time tf - 30 45 Gate to source charge Q gs - 24 32 Gate charge at threshold Q g(th) - 9.7 13 Gate to drain charge Q gd - 51 76 Switching charge Q sw - 65 95 Gate charge total Qg - 126 167 Gate plateau voltage V plateau - 5.2 - Output charge Q oss - 47 62 - - 100 - - 400 - 0.93 1.3 V - 60 75 ns - 130 160 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=100 A, R G=2.2 Ω pF ns Gate Charge Characteristics 4) V DD=30 V, I D=100 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs A See figure 16 for gate charge parameter definition Rev. 1.16 page 3 2010-01-14 IPP050N06N G 1 Power dissipation 2 Drain current P tot=f(T C); V GS≥6 V I D=f(T C); V GS≥10 V 350 IPB050N06N G 120 300 100 250 200 I D [A] P tot [W] 80 60 150 40 100 20 50 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 100 1 µs limited by on-state resistance DC I D [A] 0.5 100 µs 2 1 ms 10-1 Z thJC [K/W] 10 10 µs 10 ms 10 1 0.2 0.1 0.05 10-2 100 0.02 0.01 single pulse 10-1 10 10-3 -1 10 0 10 1 10 2 V DS [V] Rev. 1.16 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-01-14 IPP050N06N G IPB050N06N G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 15 280 10V 7V 5.5 V 5V 6.5 V 240 200 R DS(on) [mΩ] 10 I D [A] 160 5.5 V 120 6.5 V 7V 5 10 V 80 5V 40 0 0 0 0 0 1 2 0 3 40 80 V DS [V] 120 160 200 160 200 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 240 240 220 200 200 180 160 160 g fs [S] I D [A] 140 120 120 100 80 80 60 40 40 175 °C 25 °C 20 0 0 0 1 2 3 4 5 6 7 Rev. 1.16 0 40 80 120 I D [A] V GS [V] page 5 2010-01-14 IPP050N06N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=100 A; V GS=10 V V GS(th)=f(T j); V GS=V DS IPB050N06N G parameter: I D 12 5 4.5 10 4 3.5 2700 µA V GS(th) [V] R DS(on) [mΩ] 8 98 % 6 typ 3 270 µA 2.5 2 4 1.5 1 2 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 105 25 °C 98% 175 °C 98% 10 25 °C 2 175 °C 104 I F [A] C [pF] Ciss 101 Coss 103 100 Crss 102 10-1 0 10 20 30 40 50 V DS [V] Rev. 1.16 0 0.5 1 1.5 2 2.5 V SD [V] page 6 2010-01-14 IPP050N06N G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=100 A pulsed parameter: T j(start) parameter: V DD 103 IPB050N06N G 12 30 V 12V 10 102 8 25 °C V GS [V] 100 °C I AV [A] 48 V 150 °C 101 6 4 2 100 0 100 101 102 103 0 40 80 120 160 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.16 page 7 2010-01-14 IPP050N06N G IPB050N06N G PG-TO-263-3 (D²-Pak) Rev. 1.16 page 8 2010-01-14 IPP050N06N G IPB050N06N G PG-TO220-3: Outline Rev. 1.16 page 9 2010-01-14 IPP050N06N G IPB050N06N G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.16 page 10 2010-01-14