NPN Silicon High-Voltage Transistor ● ● ● ● ● BFN 20 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: BFN 21 (PNP) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BFN 20 DC Q62702-F1058 B SOT-89 C E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 300 V Collector-base voltage VCB0 300 Collector-emitter voltage, RBE = 2.7 kΩ VCER 300 Emitter-base voltage VEB0 5 Collector current IC 50 Peak collector current ICM 100 Total power dissipation, TS = 120 ˚C Ptot 1 W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 90 Junction - soldering point Rth JS ≤ 30 mA Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BFN 20 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA V(BR)CE0 300 – – V Collector-base breakdown voltage IC = 10 µA V(BR)CB0 300 – – Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.7 kΩ V(BR)CER 300 – – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 5 – – Collector-base cutoff current VCB = 250 V VCB = 250 V, TA = 150 ˚C ICB0 – – – – 100 20 Collector cutoff current VCE = 300 V, RBE = 2.7 kΩ VCE = 300 V, TA = 150 ˚C, RBE = 2.7 kΩ ICER – – – – 1 50 Emitter-base cutoff current VEB = 5 V IEB0 – – 10 DC current gain1) IC = 25 mA, VCE = 20 V hFE 40 – – – Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA VCEsat – – 0.5 V Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA VBEsat – – 1 Transition frequency IC = 10 mA, VCE = 10 V, f = 20 MHz fT – 100 – MHz Output capacitance VCB = 30 V, f = 1 MHz Cobo – 0.8 – pF nA µA µA AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 BFN 20 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Output capacitance Cobo = f (VCE) f = 1 MHz Permissible pulse load Ptot max / Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 10 V Semiconductor Group 3 BFN 20 Collector current IC = f (VBE) VCE = 20 V Collector cutoff current ICB0 = f (TA) VCB = 250 V DC current gain hFE = f (IC) VCE = 20 V Semiconductor Group 4