BUZ 310 SIPMOS ® Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 310 1000 V 2.5 A 5Ω TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 kΩ Values Unit 1000 V 1000 ID Continuous drain current TC = 25 °C A 2.5 IDpuls Pulsed drain current TC = 25 °C 10 Gate source voltage VGS Power dissipation Ptot TC = 25 °C ± 20 V W 78 Operating temperature Tj -55 ... ...+ 150 °C Storage temperature Tstg -55 ... ...+ 150 Thermal resistance, chip case RthJC ≤ 1.6 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C IEC climatic category, DIN IEC 68-1 Semiconductor Group K/W 55 / 150 / 56 1 07/96 BUZ 310 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 1000 - - VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 1000 V, VGS = 0 V, Tj = 25 °C - 20 250 VDS = 1000 V, VGS = 0 V, Tj = 125 °C - 100 1000 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 1.5 A Semiconductor Group nA - 2 4.5 5 07/96 BUZ 310 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 1.5 A Input capacitance 0.7 pF - 1600 2100 - 70 120 - 30 55 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 1.5 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Ω Rise time - 30 45 - 40 60 - 110 140 - 60 80 tr VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 2 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 310 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed - - 10 V 1.05 1.3 trr µs - 2 - Qrr VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 2.5 - VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 6 A Reverse recovery time - ISM TC = 25 °C Inverse diode forward voltage A µC - 4 15 - 07/96 BUZ 310 Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 2.6 80 A W Ptot 2.2 ID 2.0 60 1.8 1.6 50 1.4 40 1.2 1.0 30 0.8 20 0.6 0.4 10 0.2 0 0 0.0 20 40 60 80 100 120 °C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 160 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 10 1 A ID °C TC K/W t = 630.0ns p 10 1 ZthJC 10 0 1 µs 10 µs DS / D I 100 µs V 10 -1 D = 0.50 DS (o n) = 10 0 0.20 1 ms R 0.10 10 ms 10 -1 0.05 10 -2 0.02 single pulse DC 0.01 10 -2 0 10 10 1 10 2 V 10 10 -3 -7 10 3 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 tp 5 07/96 0 BUZ 310 Typ. output characteristics ID = ƒ(VDS) Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS parameter: tp = 80 µs 6.0 16 Ptot = 78W a A l kj i VGS [V] a 4.0 5.0 ID b c d e f Ω h g 4.5 f 4.0 3.5 e 3.0 d 2.5 2.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 1.5 RDS (on) 12 10 8 g h 6 20.0 i j k 4 c 1.0 2 VGS [V] = b 0.5 a 4.0 4.5 a 0.0 0 10 20 30 40 50 V 0 0.0 65 b 5.0 1.0 c 5.5 d 6.0 e f 6.5 7.0 2.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 3.0 4.0 VDS A 5.5 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 2.0 3.0 A ID gfs S 2.0 1.0 1.5 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.0 0.0 0.5 1.0 1.5 2.0 A ID 07/96 3.0 BUZ 310 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 1.5 A, VGS = 10 V 24 4.6 Ω V 98% 4.0 20 RDS (on) VGS(th) 3.6 18 typ 3.2 16 2.8 14 2.4 12 2% 2.0 10 1.6 98% typ 8 1.2 6 4 0.8 2 0.4 0 -60 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 1 nF A C IF Ciss 10 0 10 0 10 -1 10 -1 Tj = 25 °C typ Coss Tj = 150 °C typ Tj = 25 °C (98%) Crss Tj = 150 °C (98%) 10 -2 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 07/96 3.0 BUZ 310 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 4 A Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) 16 1200 V V 1160 VGS V(BR)DSS 1140 12 1120 1100 10 1080 1060 0,2 VDS max 8 0,8 VDS max 1040 1020 6 1000 980 4 960 940 2 920 900 -60 0 -20 20 60 100 °C 160 Tj Semiconductor Group 8 0 10 20 30 40 50 nC Q Gate 07/96 65 BUZ 310 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96