BCR410W Active Bias Controller 3 Characteristics 4 Supplies stable bias current from 1.8V operating voltage on Low voltage drop: 110mV for 10mA collector currrent 2 Application notes 1 VPS05605 Stabilizing bias current of NPN transistors and S e n s e 4 FET's from 100µA to 20mA = V re f 1 Marking BCR410W W8s 1= Vs Io u t + Ideal supplement for Sieget and other transistors Type 3 V s 2 G N D Pin Configuration Package 2=GND 3=Iout SOT343 4=Sense Maximum Ratings Parameter Symbol Value Unit Supply voltage VS 18 V Output current Iout 0.5 mA Total power dissipation, TS = 110 °C Ptot 100 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 470 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Dec-21-2001 BCR410W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. - 200 400 µA DC Characteristics Additional current consumption I0 VS = 3 V DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage VSmin - 1.8 - V Voltage drop Vdrop - 110 - mV Change of IC versus hFE hFE = 50 IC /IC - tbd - hFE / Change of IC versus VS VS = 3 V IC /IC - 2 - %/V Change of IC versus TA IC /IC - 0.15 - %/K IC = 10 mA hFE 2 Dec-21-2001 BCR410W Collector Current IC = f (VS) Voltage drop Vdrop = f (IC ) of stabilized NPN Transistor Parameter Rext. () 10 2 300 mV mA 240 10 Ohm 220 Vdrop 10 1 15 Ohm Ic 22 Ohm 200 180 160 47 Ohm 140 100 Ohm 10 0 120 100 220 Ohm 80 470 Ohm 60 40 1000 Ohm 10 -1 2.0 20 2.5 3.0 3.5 4.0 4.5 V 0 -1 10 5.5 10 0 10 Vs 1 mA 10 2 IC Collector current IC = f (Rext. ) Total power dissipation Ptot = f (TS ) of stabilized NPN Transistor 10 2 120 mA mW 80 Ic Ptot 10 1 60 10 0 40 20 10 -1 1 10 10 2 10 3 0 0 Ohm 10 4 20 40 60 80 100 120 °C 150 TS Rext 3 Dec-21-2001 BCR410W Application Circuit: V s B C R 4 1 0 W R e x t = V re f + L c R b R F o u t R F in R F T r a n s is to r 4 Dec-21-2001