SGB06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability C G E PG-TO-263-3-2 (D²-PAK) (TO-263AB) 2 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGB06N60 VCE IC VCE(sat)150°C Tj Marking Package 600V 6A 2.3V 150°C G06N60 PG-TO-263-3-2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current IC Value 600 Unit V A TC = 25°C 12 TC = 100°C 6.9 Pulsed collector current, tp limited by Tjmax ICpul s 24 Turn off safe operating area - 24 Gate-emitter voltage VGE ±20 V Avalanche energy, single pulse EAS 34 mJ tSC 10 µs Ptot 68 W -55...+150 °C VCE ≤ 600V, Tj ≤ 150°C IC = 6 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C 1) Short circuit withstand time VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Tj , Tstg Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) 2 1) 245 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 Nov 06 SGB06N60 Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.85 K/W RthJA 40 Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient 1) Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - 1.7 2.0 2.4 T j =1 5 0° C - 2.3 2.8 3 4 5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 6 A T j =2 5 °C Gate-emitter threshold voltage VGE(th) I C = 25 0 µA , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V, V G E = 0 V µA T j =2 5 °C - - 20 T j =1 5 0° C - - 700 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 6 A - 4.2 - S Input capacitance Ciss V C E = 25 V , - 350 420 pF Output capacitance Coss V G E = 0V , - 38 46 Reverse transfer capacitance Crss f= 1 MH z - 23 28 Gate charge QGate V C C = 48 0 V, I C =6 A - 32 42 nC - 7 - nH - 60 - A Dynamic Characteristic V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case 2) Short circuit collector current IC(SC) V G E = 15 V ,t S C ≤ 10 µs V C C ≤ 6 0 0 V, T j ≤ 1 5 0° C 1) 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.2 Nov 06 SGB06N60 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 25 30 - 18 22 - 220 264 - 54 65 - 0.110 0.127 - 0.105 0.137 - 0.215 0.263 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G =50Ω , 1) L σ = 18 0 nH , 1) C σ = 25 0 pF Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 24 29 - 17 20 - 248 298 - 70 84 - 0.167 0.192 - 0.153 0.199 - 0.320 0.391 Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) T j =1 5 0° C V C C = 40 0 V, I C =6 A , V G E = 0/ 15 V , R G = 50 Ω, 1) L σ = 18 0 nH , 1) C σ = 25 0 pF Energy losses include “tail” and diode reverse recovery. ns mJ Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.2 Nov 06 SGB06N60 Ic 20A 10A t p =2 µ s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 30A T C =80°C T C =110°C 10A 15 µ s 50 µ s 1A 200 µ s Ic 1ms DC 0A 10Hz 0.1A 100Hz 1kHz 10kHz 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 50Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 15A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 80W 60W 40W 20W 0W 25°C 50°C 75°C 100°C 10A 5A 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.2 Nov 06 20A 20A 15A 15A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT SGB06N60 VGE=20V 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V 1V 2V 3V 4V Tj=+25°C -55°C +150°C IC, COLLECTOR CURRENT 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 2V 4V 6V 8V 10V 15V 13V 11V 9V 7V 5V 5A 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) 18A 10A 0A 0V 5V 20A VGE=20V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V) 4.0V IC = 12A 3.5V 3.0V IC = 6A 2.5V 2.0V 1.5V 1.0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.2 Nov 06 SGB06N60 100ns td(off) t, SWITCHING TIMES t, SWITCHING TIMES t d(off) tf t d(on) tf 100ns t d(on) tr tr 10ns 0A 3A 6A 9A 12A 10ns 0Ω 15A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 50Ω, Dynamic test circuit in Figure E) 50 Ω 100 Ω 150 Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 6A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5.5V t, SWITCHING TIMES t d(off) 100ns tf td(on) tr 10ns 0°C 50°C 100°C 5.0V 4.5V 4.0V max. 3.5V typ. 3.0V 2.5V min. 2.0V 150°C -50°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 6A, RG = 50Ω, Dynamic test circuit in Figure E) 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.25mA) 6 Rev. 2.2 Nov 06 SGB06N60 0.6mJ 0.8mJ *) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery. E ts * E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES E ts * 0.6mJ 0.4mJ E on * E off 0.2mJ 0.0mJ 0A 3A 6A 9A 12A 0.4mJ E off E on * 0.2mJ 0.0mJ 0Ω 15A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 50Ω, Dynamic test circuit in Figure E) 50 Ω 100 Ω 150 Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 6A, Dynamic test circuit in Figure E) 0.4mJ E ts * 0.3mJ 0.2mJ E on * E off 0.1mJ 0.0mJ 0°C 50°C 100°C 0 ZthJC, TRANSIENT THERMAL IMPEDANCE E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. D=0.5 10 K/W 0.2 0.1 -1 0.05 10 K/W 0.02 -2 R,(K/W) 0.705 0.561 0.583 0.01 10 K/W R1 R2 single pulse C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 -3 10 K/W 1µs 150°C τ, (s) 0.0341 3.74E-3 3.25E-4 10µs 100µs 1m s 10m s 100m s 1s tp, PULSE WIDTH Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 6A, RG = 50Ω, Dynamic test circuit in Figure E) Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2.2 Nov 06 SGB06N60 1nF 25V C iss 120V 480V C, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 20V 15V 10V 100pF C oss 5V C rss 0V 0nC 15nC 30nC 10pF 0V 45nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 6A) 30V 100A IC(sc), SHORT CIRCUIT COLLECTOR CURRENT tsc, SHORT CIRCUIT WITHSTAND TIME 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 25 µ s 20 µ s 15 µ s 10 µ s 5µ s 0µ s 10V 10V 11V 12V 13V 14V 80A 60A 40A 20A 0A 10V 15V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25°C) 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE ≤ 600V, Tj = 150°C) 8 Rev. 2.2 Nov 06 SGB06N60 PG-TO263-3-2 9 Rev. 2.2 Nov 06 SGB06N60 τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn TC Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH an d Stray capacity C σ =250pF. 10 Rev. 2.2 Nov 06 SGB06N60 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/30/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 Rev. 2.2 Nov 06