PNP Silicon High Voltage Transistors SXTA 92 SXTA 93 High breakdown voltage ● Low collector-emitter saturation voltage ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SXTA 92 SXTA 93 2D 2E Q68000-A8393 Q68000-A8651 B SOT-89 C E Maximum Ratings Parameter Symbol SXTA 92 Values SXTA 93 Unit Collector-emitter voltage VCE0 300 200 V Collector-base voltage VCB0 300 200 Emitter-base voltage VEB0 Collector current IC 500 mA Total power dissipation, TS = 130 ˚C Ptot 1 W Junction temperature Tj 150 ˚C Storage temperature range Tstg 5 – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 75 Junction - soldering point Rth JS ≤ 20 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXTA 92 SXTA 93 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 300 200 – – – – 300 200 – – – – 5 – – – – – – – – – – 250 250 20 20 nA nA µA µA – – 100 nA 25 40 25 25 – – – – – – – – – – – – 0.5 0.4 DC characteristics Collector-emitter breakdown voltage IC = 1 mA SXTA 92 SXTA 93 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA SXTA 92 SXTA 93 V(BR)CB0 Emitter-base breakdown voltage IE = 100 µA V(BR)EB0 Collector-base cutoff current VCB = 200 V, IE = 0 VCB = 160 V, IE = 0 VCB = 200 V, IE = 0, TA = 125 ˚C VCB = 160 V, IE = 0, TA = 125 ˚C ICB0 SXTA 92 SXTA 93 SXTA 92 SXTA 93 Emitter-base cutoff current VEB = 4 V, IC = 0 IEB0 DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V hFE SXTA 92 SXTA 93 V – V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA SXTA 92 SXTA 93 VCEsat Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA VBEsat – – 0.9 Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz fT 50 – – Output capacitance VCB = 20 V, f = 1 MHz Cobo AC characteristics 1) SXTA 92 SXTA 93 Semiconductor Group pF – – Pulse test conditions: t ≤ 300 µs, D ≤ 2 %. 2 MHz – – 6 8 SXTA 92 SXTA 93 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 20 V, f = 100 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Operating range IC = f (VCE0) TA = 25 ˚C, D = 0 Semiconductor Group 3 SXTA 92 SXTA 93 Collector cutoff current ICB0 = f (TA) VCB = 160 V Collector current IC = f (VBE) VCE = 10 V DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4