AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM Datasheet

AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Avalanche Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
®
eSMP Series
Available
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high frequency
• Low reverse current
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• AEC-Q101 qualified
DO-220AA (SMP)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
200 V, 400 V, 600 V, 800 V,
1000 V
IFSM
30 A, 25 A
trr
75 ns
IR
1 μA
EAS
20 mJ
VF at IF = 1.0 A
1.6 V
TJ max.
175 °C
Package
DO-220AA (SMP)
Diode variations
Single die

MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of AC/AC and DC/DC converters
in high temperature conditions for both consumer and
automotive applications.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
AU1PD
AU1PG
AU1PJ
AU1PK
AU1PM
AUD
AUG
AUJ
AUK
AUM
200
400
600
800
1000
UNIT
Maximum repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
Non-repetitive avalanche energy
at IAS = 1.0 A, TA = 25 °C
EAS
20
mJ
TJ, TSTG
-55 to +175
°C
Operating junction and storage temperature range
1.0
30
V
A
25
A
Revision: 19-Feb-15
Document Number: 89291
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA = 25 °C
Maximum instantaneous
forward voltage
IF = 1.0 A
Maximum reverse current
Rated VR
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
Typical junction capacitance
4.0 V, 1 MHz
CJ
AU1PD
AU1PG
VF (1)
TA = 125 °C
TA = 25 °C
AU1PK
AU1PM
1.85
1.4
1.6
1.0
IR (2)
TA = 125 °C
AU1PJ
1.5
UNIT
V
μA
100
75
ns
11
7.5
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
AU1PD
AU1PG
AU1PJ
RJA (1)
132
RJM (1)
15
AU1PK
AU1PM
UNIT
°C/W
Note
(1) Free air, mounted on recommended copper pad area. Thermal resistance R
JA - junction to ambient, RJM - junction to mount at the terminal
cathode band
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
AU1PJ-M3/84A
0.024
84A
3000
7" diameter plastic tape and reel
AU1PJ-M3/85A
0.024
85A
10 000
13" diameter plastic tape and reel
AU1PJHM3/84A (1)
0.024
84A
3000
7" diameter plastic tape and reel
(1)
0.024
85A
10 000
13" diameter plastic tape and reel
AU1PJHM3/85A
BASE QUANTITY
DELIVERY MODE
Note
Automotive grade
(1)
Revision: 19-Feb-15
Document Number: 89291
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °c unless otherwise noted)
10
Resistive or Inductive Load
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
1.2
AU1PD thru AU1PJ
1.0
0.8
AU1PK thru AU1PM
0.6
0.4
TM Measured
at the Cathode Band Terminal
0.2
0
100
110
120
130
140
150
170
160
TA = 175 °C
TA = 125 °C
1
TA = 75 °C
TA = 25 °C
AU1PD thru AU1PJ
0.1
0.4
180
0.8
TM - Mount Temperature (°C)
2.0
2.4
2.8
Fig. 4 - Typical Instantaneous Forward Characteristics
10
AU1PD thru AU1PJ
1.4
D = 0.8
D = 0.5
D = 0.3
D = 0.2
1.2
D = 1.0
D = 0.1
1.0
0.8
0.6
T
0.4
0.2
D = tp/T
tp
0.8
1.0
Instantaneous Forward Current (A)
1.6
Average Power Loss (W)
1.6
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
0
0.2
0.4
0.6
TA = 175 °C
1
TA = 125 °C
TA = 75 °C
0.1
TA = 25 °C
AU1PK thru AU1PM
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
0
1.2
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
1000
1.6
1.4
D = 0.5
D = 0.3
D = 0.8
Instantaneous Reverse Current (μA)
AU1PK thru AU1PM
Average Power Loss (W)
1.2
D = 0.2
1.2
D = 1.0
D = 0.1
1.0
0.8
0.6
T
0.4
0.2
D = tp/T
tp
TA = 175 °C
100
TA = 125 °C
10
TA = 75 °C
1
TA = 25 °C
0.1
AU1PD thru AU1PJ
0.01
0
0
0.2
0.4
0.6
0.8
1.0
1.2
10
20
30
40
50
60
70
80
90
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Characteristics
100
Revision: 19-Feb-15
Document Number: 89291
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (μA)
1000
TA = 175 °C
100
TA = 125 °C
10
TA = 75 °C
1
0.1
TA = 25 °C
AU1PK thru AU1PM
20
30
40
50
60
70
80
90
100
10
1
0.01
0.01
10
Junction to Ambient
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 7 - Typical Reverse Characteristics
Fig. 9 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
AU1PD thru AU1PJ
AU1PK thru AU1PM
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 8 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode Band
0.053 (1.35)
0.041 (1.05)
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.036 (0.91)
0.024 (0.61)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.158 (4.00)
0.146 (3.70)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.025 0.030
(0.635) (0.762)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.050
(1.27)
Revision: 19-Feb-15
Document Number: 89291
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000