BAR50... Silicon PIN Diodes Current-controlled RF resistor for switching and attenuating applications Frequency range above 10 MHz up to 6 GHz Especially useful as antenna switch in mobile communication Very low capacitance at zero volt reverse bias at freuencies above 1 GHz (typ. 0.15 pF) Low forward resitance Very low harmonics BAR50-02L BAR50-02V BAR50-03W BAR50-05 1 3 2 D 2 D 1 1 Type BAR50-02L* BAR50-02V BAR50-03W BAR50-05* 2 Package TSLP-2-1 SC79 SOD323 SOT23 Configuration single,leadless single single common cathode LS(nH) 0.4 0.6 1.4 1.8 Marking AB a blue A OCs * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Diode reverse voltage VR 50 V Forward current IF 100 mA Total power dissipation Ptot mW BAR50-02L, TS 130°C 250 BAR50-02V, TS 120°C 250 BAR50-03W, TS 116°C 250 BAR50-05, TS 60°C 250 150 Junction temperature Tj Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 1 Unit °C Feb-04-2003 BAR50... Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit K/W 80 120 135 360 BAR50-02L BAR50-02V BAR50-03W BAR50-05 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. IR - - 50 nA VF - 0.95 1.1 V DC Characteristics Reverse current VR = 50 V Forward voltage IF = 50 mA 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Feb-04-2003 BAR50... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz - 0.24 0.5 VR = 5 V, f = 1 MHz - 0.2 0.4 VR = 0 V, f = 100 MHz - 0.2 - VR = 0 V, f = 1...1.8 GHz, BAR50-02L - 0.1 - VR = 0 V, f = 1...1.8 GHz, all other - 0.15 - Reverse parallel resistance k RP VR = 0 V, f = 100 MHz - 25 - VR = 0 V, f = 1 GHz - 6 - VR = 0 V, f = 1.8 GHz - 5 - Forward resistance rf IF = 0.5 mA, f = 100 MHz - 25 40 IF = 1 mA, f = 100 MHz - 16.5 25 IF = 10 mA, f = 100 MHz - 3 4.5 rr - 1100 - ns I-region width WI - 56 - µm Insertion loss1) |S21|2 Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 dB IF = 3 mA, f = 1.8 GHz - -0.56 - IF = 5 mA, f = 1.8 GHz - -0.4 - IF = 10 mA, f = 1.8 GHz - -0.27 - VR = 0 V, f = 0.9 GHz - -24.5 - VR = 0 V, f = 1.8 GHz - -20 - VR = 0 V, f = 2.45 GHz - -18 - VR = 0 V, f = 5.6 GHz - -12 - Isolation1) 1BAR50-02L |S21|2 in series configuration, Z = 50 3 Feb-04-2003 BAR50... Diode capacitance CT = (VR ) Reverse parallel resistance RP = (VR ) f = Parameter f = Parameter 10 3 0.5 KOhm pF 10 2 Rp CT 0.4 0.35 10 1 0.3 1 MHz 100 MHz 1 GHz 1.8 GHz 0.25 100 MHz 1 GHz 1.8 GHz 10 0 0.2 0.15 0.1 0 2 4 6 8 10 12 14 16 V 10 -1 0 20 2 4 6 8 10 12 14 16 VR Forward current IF = (VF) f = 100 MHz TA = Parameter 4 10 0 A Ohm 10 20 VR Forward resistance rf = (I F) 10 V 10 -1 3 10 2 IF rf 10 -2 10 -3 10 -40 °C 25 °C 85 °C 125 °C 1 10 -4 10 10 0 10 -5 -1 10 -2 10 -1 10 0 10 1 10 -6 0 mA 10 2 IF 0.2 0.4 0.6 0.8 V 1.2 VF 4 Feb-04-2003 BAR50... Forward current IF = (TS ) BAR50-02L BAR50-02V, BAR50-03W 120 mA 120 mA 100 100 90 90 80 80 IF IF Forward current IF = (TS ) 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 15 30 45 60 75 90 105 120 °C 0 0 150 15 30 45 60 90 105 120 C° 75 TS 150 TS Forward current IF = (TS ) Permissible Puls Load RthJS = (tp ) BAR50-05 BAR50-02L 10 2 120 mA 100 mA RthJS 90 IF 80 70 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 10 0 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 °C 10 0 tp 5 Feb-04-2003 BAR50... Permissible Pulse Load Permissible Puls Load RthJS = (tp ) IFmax / IFDC = (tp ) BAR50-02V BAR50-02L 10 1 10 3 mA 10 2 RthJS IFmax/ IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 °C 10 10 -1 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Pulse Load Permissible Puls Load RthJS = (tp ) IFmax / IFDC = (tp ) BAR50-02W BAR50-02V 10 3 IFmax / IFDC 10 2 RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 -3 10 -2 s 10 10 -1 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tp 6 Feb-04-2003 BAR50... Permissible Pulse Load Permissible Puls Load RthJS = (tp ) IFmax / IFDC = (tp ) BAR50-03W BAR50-02W 10 3 IFmax / IFDC 10 2 RthJS 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 -3 10 -2 s 10 10 -1 -6 10 0 10 -5 10 -4 10 -3 10 -2 tp s 10 0 10 0 tp Permissible Pulse Load Permissible Puls Load RthJS = (tp ) IFmax / IFDC = (tp ) BAR50-05 BAR50-03W 10 2 RthJS IFmax / IFDC 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 10 2 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 -3 10 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s tP 7 Feb-04-2003 BAR50... Permissible Pulse Load Insertion loss |S21 |2 = (f) IFmax / IFDC = (tp ) IF = Parameter BAR50-02L in series configuration, Z = 50 BAR50-05 10 2 0 IFmax / IFDC dB 100 mA |S21|2 -0.2 D=0 0.05 0.02 0.01 0.5 0.2 0.1 0.5 10 1 10 mA -0.3 5 mA -0.4 -0.5 3 mA -0.6 -0.7 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 -0.8 0 0 tp 1 2 3 4 GHz 6 f Isolation |S21 |2 = (f) VR = Parameter BAR50-02L in series configuration, Z = 50 0 |S21|2 dB -10 -15 -20 0V 1V 10 V -25 -30 0 1 2 3 4 GHz 6 f 8 Feb-04-2003