BSS 192 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated -250 V 12 Ω -0.19 A PG-SOT89 1 Drain pin 2 2 3 Gate pin1 Source pin 3 Type Package Pb-free BSS 192 P PG-SOT89 Yes 2 VPS05162 Tape and Reel Information L6327: 1000 pcs/reel Marking KC Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -0.19 TA=70°C -0.1 ID puls -0.76 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1 W -55... +150 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS =-0.19A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 1.3 Page 1 2006-12-04 BSS 192 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. RthJS - - 10 RthJA - - 125 Characteristics Thermal resistance, junction - soldering point K/W (Pin 2) Thermal resistance, junction - ambient, leaded Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. -250 - - -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) ID =-130µA Zero gate voltage drain current µA IDSS VDS =-250V, VGS =0, Tj =25°C - -0.1 -0.2 VDS =-250V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 10 20 Ω RDS(on) - 8.3 15 RDS(on) - 7.7 12 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-2.8V, ID =-0.025A Drain-source on-state resistance VGS =-4.5V, ID =-0.1A Drain-source on-state resistance VGS =-10V, ID =-0.19A Rev 1.3 Page 2 2006-12-04 BSS 192 P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.19 0.38 - S pF Dynamic Characteristics Transconductance gfs |VDS|≥2*|ID |*RDS(on)max , ID =-0.1A Input capacitance Ciss VGS =0, VDS =-25V, - 83 104 Output capacitance Coss f=1MHz - 13 16 Reverse transfer capacitance Crss - 6 8 Turn-on delay time td(on) VDD =-125V, VGS =-10V, - 4.7 7 Rise time tr ID =-0.19A, RG=2Ω - 5.2 8 Turn-off delay time td(off) - 72 108 Fall time tf - 50 75 - -0.2 - -1.9 -2.4 - -4.9 -6.1 V(plateau) VDD =-200V, ID=-0.19A - -2.63 - IS - - -0.19 A - - -0.76 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-200V, ID=-0.19A VDD =-200V, ID=-0.19A, -0.25 nC VGS =0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, IF=-0.19A - -0.78 -1.1 V Reverse recovery time trr VR =-125V, IF =lS , - 46 57 ns Reverse recovery charge Qrr diF /dt=100A/µs - 72 90 nC Rev 1.3 Page 3 2006-12-04 BSS 192 P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS | ≥ 10V 1.1 BSS 192 P -0.2 W A 0.9 -0.16 0.8 -0.14 0.7 ID Ptot BSS 192 P -0.12 0.6 -0.1 0.5 -0.08 0.4 -0.06 0.3 -0.04 0.2 -0.02 0.1 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25°C parameter : D = tp /T -10 °C 1 BSS 192 P 10 3 BSS 192 P K/W A 10 2 -10 0 tp = 240.0µs Z thJA 10 1 /I D ID 1 ms 10 0 DS 10 ms on ) = V -10 -1 D = 0.50 0.20 R DS ( 10 -1 0.10 -10 -2 10 -2 10 -3 0.05 0.02 DC -10 -3 -1 -10 -10 0 -10 1 -10 2 V -10 3 VDS Rev 1.3 10 -4 -7 10 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2006-12-04 BSS 192 P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C, -VGS parameter: VGS ; Tj =25°C, -VGS 15 10V A 6V 4.6V 4V 3.6V 0.5 3.4V 3.2V 2.8V 0.4 2.6V 2.4V Ω 2.4V 2.6V 2.8V 3.2V 12 RDS(on) -I D 0.7 10.5 9 7.5 0.3 10V 6V 4.6V 4V 3.6V 3.4V 6 4.5 0.2 3 0.1 1.5 0 0 1 2 3 4 5 6 7 V 8 0 0 10 0.1 0.2 0.3 0.4 0.5 A -VDS 0.7 -ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj =25°C 0.7 0.8 A S 0.6 g fs -I D 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0 0 0.1 0.5 1 1.5 2 2.5 V 3.5 -VGS Rev 1.3 0 0 0.1 0.2 0.3 0.4 0.5 0.7 A -ID Page 5 2006-12-04 BSS 192 P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = -0.19 A, VGS = -10 V parameter: VGS = VDS 32 BSS 192 P 2.2 Ω V - VGS(th) RDS(on) 98% 24 20 1.8 1.6 typ. 1.4 16 1.2 98% 12 1 typ 8 0.8 4 0 -60 2% 0.6 -20 20 60 100 °C 0.4 -60 180 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 -10 0 pF BSS 192 P A Ciss -10 -1 C IF 10 2 Coss 10 1 -10 -2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Crss Tj = 150 °C (98%) 10 0 0 6 12 18 24 V 36 -VDS Rev 1.3 -10 -3 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2006-12-04 BSS 192 P 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QGate ) V(BR)DSS = f (Tj ) parameter: ID = -0.19 A pulsed, Tj = 25 °C -16 BSS 192 P BSS 192 P -300 V V(BR)DSS V VGS -12 -10 -285 -280 -275 -270 -265 -8 20% -260 50% -6 -255 80% -250 -245 -4 -240 -235 -2 -230 0 0 1 2 3 4 5 6 nC 7.5 |Q G| Rev 1.3 -225 -60 -20 20 60 100 °C 180 Tj Page 7 2006-12-04 BSS 192 P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.3 Page 8 2006-12-04