1N6138-1N6173

1N6138AUS – 1N6173AUS
Available on
commercial
versions
Voidless Hermetically Sealed Surface Mount
Bidirectional Transient Voltage Suppressors
Qualified to MIL-PRF-19500/516
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
DESCRIPTION
This surface mount series of industry recognized voidless, hermetically sealed, bidirectional
Transient Voltage Suppressor (TVS) designs are military qualified to MIL-PRF-19500/516 and are
ideal for high-reliability applications where a failure cannot be tolerated. They provide a working
peak “standoff” voltage selection from 5.2 to 152 volts with a 1500 watt rating for a 10/1000 us
pulse. They are very robust in hard-glass construction and use internal Category 1 metallurgical
bonds for high reliability. These are also available as both a non suffix part and an “A” version part
involving different voltage tolerances as further described in the nomenclature section. These
devices are also available in axial-leaded packages for thru-hole mounting.
Also available in:
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
“C” or SQ-MELF
Package
“C” Package
High surge current and peak pulse power provides transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category 1” metallurgical bonds
Voidless hermetically sealed glass package
JAN, JANTX, JANTXV and JANS qualified versions are available per MIL-PRF-19500/516.
(See part nomenclature for all available options.)
RoHS compliant versions available (commercial grade only)
(axial-leaded)
1N6138 – 1N6173
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
•
•
Military and other high-reliability applications
Extremely robust construction
Extensive range in working peak “standoff” voltage (V WM ) from 5.2 to 152 volts
1500 watt peak pulse power (P PP ) for a 10/1000 us pulse
ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively
Protection from the secondary effects of lightning per select levels in IEC61000-4-5
Square-end-cap terminals for easy placement
Non-sensitive to ESD per MIL-STD-750 method 1020
Inherently radiation hard as described in Microsemi “MicroNote 050”
MAXIMUM RATINGS @ TA = 25 oC unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-End Cap
Peak Pulse Power @ 25 ºC (10/1000 µs)
o (1)
Off-State Power up to TEC = 150 C
o (2)
Off-State Power @ TA = 25 C
Impulse Repetition Rate
Solder Temperature @ 10 s
Notes: 1.
2.
Symbol
Value
TJ and TSTG
R ӨJEC
P PP
-55 to +175
5.0
1500
PD
PD
df
TSP
5.0
3.0
0.01
260
Unit
o
C
C/W
W
o
W
W
%
o
C
Linearly derate above T EC =150 oC to zero at T EC =175 oC.
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T OP or T J(MAX) is not exceeded (also see
figure 6).
T4-LDS-0278-1, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Page 1 of 7
1N6138AUS – 1N6173AUS
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed voidless hard glass with tungsten slugs
TERMINALS: Tin/lead plate over copper. RoHS compliant matte-tin is available on commercial grade only.
MARKING: None
POLARITY: No polarity marking for these bidirectional TVSs
TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities.
WEIGHT: Approximately 1100 milligrams
See package dimensions on last page.
PART NOMENCLATURE
JAN
1N6138
A
US e3
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level
Blank = commercial
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
See Electrical Characteristics
table
Voltage Tolerance
A = Standard
Blank =5% higher V C , 5% lower
min. V (BR) and 5% lower I PP
SYMBOLS & DEFINITIONS
Definition
Symbol
α V(BR)
V (BR)
V WM
ID
VC
P PP
Surface Mount Package
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Breakdown Voltage: The voltage across the device at a specified current I (BR) in the breakdown region.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
Standby Current: The current through the device at rated stand-off voltage.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I PP ) for a specified waveform.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I PP and V C .
T4-LDS-0278-1, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 2 of 7
1N6138AUS – 1N6173AUS
ELECTRICAL CHARACTERISTICS
INDUSTRY
TYPE NUMBER
(Note 1)
1N6138AUS
1N6139AUS
1N6140AUS
1N6141AUS
1N6142AUS
1N6143AUS
1N6144AUS
1N6145AUS
1N6146AUS
1N6147AUS
1N6148AUS
1N6149AUS
1N6150AUS
1N6151AUS
1N6152AUS
1N6153AUS
1N6154AUS
1N6155AUS
1N6156AUS
1N6157AUS
1N6158AUS
1N6159AUS
1N6160AUS
1N6161AUS
1N6162AUS
1N6163AUS
1N6164AUS
1N6165AUS
1N6166AUS
1N6167AUS
1N6168AUS
1N6169AUS
1N6170AUS
1N6171AUS
1N6172AUS
1N6173AUS
MINIMUM
BREAKDOWN
VOLTAGE
(Note 1)
V (BR) @ I (BR)
Volts
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.5
114.0
123.5
142.5
152.0
171.0
190.0
mA
175
175
150
150
125
125
100
100
75
75
65
65
50
50
50
40
40
30
30
30
25
25
20
20
20
20
15
15
12
12
10
10
8
8
5
5
RATED
STANDOFF
VOLTAGE
MAXIMUM
STANDBY
CURRENT
V WM
I D @ V WM
V
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
86.6
91.2
98.8
114.0
121.6
136.8
152.0
µA
500
300
100
100
100
20
20
20
20
20
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MAXIMUM
CLAMPING
VOLTAGE
(Note 1)
V C @ I PP
Volts
10.5
11.2
12.1
13.4
14.5
15.6
16.9
18.2
21.0
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
97.1
103.1
112.8
125.1
137.6
151.3
165.1
178.8
206.3
218.4
245.7
273.0
MAXIMUM
PEAK PULSE
CURRENT
(Note 1)
I PP
MAXIMUM
TEMP.
COEF. OF
V (BR)
α V(BR)
Amps
142.8
133.9
124.0
111.9
103.4
96.2
88.8
82.4
71.4
67.3
59.8
54.2
49.2
45.0
40.1
36.0
32.8
30.1
28.0
25.4
23.2
21.4
19.5
17.6
15.4
14.5
13.3
12.0
10.9
9.9
9.1
8.4
7.3
6.9
6.1
5.5
%/oC
0.05
0.06
0.06
0.06
0.07
0.07
0.07
0.08
0.08
0.08
0.085
0.085
0.085
0.09
0.09
0.09
0.095
0.095
0.095
0.095
0.095
0.095
0.095
0.100
0.100
0.100
0.100
0.100
0.100
0.100
0.100
0.105
0.105
0.105
0.110
0.110
Notes: 1. Part number without the A suffix has 5% higher V C , 5% lower minimum V (BR) , and 5% lower I PP .
T4-LDS-0278-1, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 3 of 7
1N6138AUS – 1N6173AUS
Peak Pulse Power (PPP)
GRAPHS
Pulse Time (t p )
Max Peak Pulse Power (PPP) or current (IPP)
in percent of Max Ratings
FIGURE 1
Peak Pulse Power vs. Pulse Time
Junction Temperature (T J ) in °C
FIGURE 2
Peak Pulse Power vs T J (prior to impulse)
T4-LDS-0278-1, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 4 of 7
1N6138AUS – 1N6173AUS
Pulse Current (IPP) in Percent of IPP
GRAPHS
Time (t) in milliseconds
DC Operation (W) Maximum Rating
FIGURE 3
Pulse Wave Form
T A (°C) (Ambient)
FIGURE 4
Temperature-Power Derating Curve
T4-LDS-0278-1, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 5 of 7
1N6138AUS – 1N6173AUS
Maximum Steady-State Power in Watts
GRAPHS
Ambient Temperature (T A ) in °C
FIGURE 5
Steady-State Derating Curve for Free-Air Mounting (RθJA = 50 ºC/W)
T4-LDS-0278-1, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 6 of 7
1N6138AUS – 1N6173AUS
PACKAGE DIMENSIONS
Ltr
BD
BL
ECT
S
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.183 0.202
4.65
5.13
0.205 0.245
5.21
6.22
0.019 0.028
0.48
0.71
0.003
0.08
-
Notes
4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Minimum clearance of glass body to mounting surface on all orientations.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
DIM
A1
A2
B
C
INCH
0.310
0.170
0.070
0.205
MILLIMETERS
7.87
4.32
1.78
5.21
NOTE: If mounting requires adhesive separate from the solder, an additional 0.090 inch
(2.29 mm) diameter contact may be placed in the center between the pads as an
optional spot for cement.
T4-LDS-0278-1, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 7 of 7
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