IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 SIPMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 VDS P-TO262-3-1 V RDS(on) 26 m ID 47 A P-TO263-3-2 P-TO220-3-1 • Green package (lead free) Type Package Ordering Code Marking IPP47N10SL-26 PG-TO220-3-1 SP0002-25707 N10L26 IPB47N10SL-26 PG-TO263-3-2 SP0002-25701 N10L26 IPI47N10SL-26 PG-TO262-3-1 SP0002-25704 N10L26 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 47 TC=100°C 33 ID puls 188 EAS 400 Avalanche energy, periodic limited by Tjmax EAR 17.5 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 175 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID =47 A , VDD =25V, RGS =25 mJ kV/µs IS =47A, VDS =0V, di/dt=200A/µs TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2006-02-14 IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.85 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =2mA Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current µA IDSS VDS =100V, VGS =0V, Tj =25°C - 0.1 1 VDS =100V, VGS =0V, Tj =150°C - - 100 IGSS - 10 100 nA RDS(on) - 25 40 m RDS(on) - 18 26 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=33A Drain-source on-state resistance VGS =10V, ID =33A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2006-02-14 IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 18 36 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =33A Input capacitance Ciss VGS =0V, VDS =25V, - 2000 2500 Output capacitance Coss f=1MHz - 375 470 Reverse transfer capacitance Crss - 210 265 Turn-on delay time td(on) - 50 75 Rise time tr - 100 150 Turn-off delay time td(off) - 50 75 Fall time tf - 70 105 - 8 12 - 16 24 - 90 135 V(plateau) VDD =80V, ID=47A - 3.38 - V IS - - 47 A - - 188 VDD =50V, VGS=4.5V, ID =47A, RG =2 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =47A VDD =80V, ID =47A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =94A - 1.1 1.5 V Reverse recovery time trr VR =50V, IF =lS , - 80 120 ns Reverse recovery charge Qrr diF /dt=100A/µs - 340 510 nC Page 3 2006-02-14 IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 190 parameter: VGS 10 V SPP47N10L 55 W A 160 45 140 40 120 35 ID Ptot SPP47N10L 30 100 25 80 20 60 15 40 10 20 0 0 5 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 10 1 3 SPP47N10L SPP47N10L K/W A 10 0 tp = 7.1µs Z thJC 10 µs 10 -1 =V DS /I D ID 10 2 D = 0.50 100 µs DS (on ) 10 0.20 0.10 R 10 1 -2 0.05 1 ms 0.02 10 -3 0.01 10 ms single pulse DC 10 0 -1 10 10 0 10 1 10 2 V 10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2006-02-14 IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS A SPP47N10L 130 Ptot = 175W l kj i h g 100 VGS [V] a 2.5 f 90 e 80 ID SPP47N10L m 70 d 60 50 c 40 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 b c d e 110 100 RDS(on) 120 90 80 70 60 50 40 30 f g h i j l k 30 b 20 10 20 10 a 0 0 1 2 3 V 4 0 0 5.5 VGS [V] = b 3.0 10 c 3.5 d 4.0 20 e f 4.5 5.0 30 40 g 5.5 h i 6.0 6.5 50 60 j 7.0 70 k l 8.0 10.0 7 Typ. transfer characteristics 8 Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs 60 60 A S 50 50 45 45 40 40 g fs ID ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0.5 1 1.5 2 2.5 3 3.5 4 V 100 ID VDS 0 0 A 80 5 0 0 10 20 30 40 A 55 ID VGS Page 5 2006-02-14 IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 33 A, VGS = 4.5 V parameter: VGS = VDS , ID = 2 mA 170 SPP47N10L 3 V m 2.4 V GS(th) RDS(on) 140 120 100 2.2 2 1.8 1.6 80 1.4 1.2 60 max 1 98% 0.8 40 typ 0.6 typ 0.4 20 min 0.2 0 -60 -20 20 60 100 140 °C 0 -60 200 -20 20 60 100 140 Tj °C 200 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 SPP47N10L A pF 10 2 C IF Ciss 10 3 10 1 Tj = 25 °C typ Coss Tj = 175 °C typ Tj = 25 °C (98%) Crss 10 2 0 5 10 15 20 25 30 V Tj = 175 °C (98%) 40 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2006-02-14 IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 47 A , VDD = 25 V, RGS = 25 parameter: ID = 47 A pulsed 400 16 mJ SPP47N10L V 320 VGS E AS 12 280 240 200 10 0,2 VDS max 0,8 VDS max 8 160 6 120 4 80 2 40 0 25 45 65 85 105 125 145 °C 185 Tj 0 0 20 40 60 80 100 120 nC 150 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 120 SPP47N10L V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Page 7 2006-02-14 IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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