IPD25N06S2-40 OptiMOS® Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS(on),max (SMD version) 40 mΩ ID 29 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD25N06S2-40 PG-TO252-3-11 2N0640 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Value 29 Unit A 21 Pulsed drain current1) I D,pulse T C=25 °C 116 Avalanche energy, single pulse E AS I D=25A 80 mJ Gate source voltage V GS ±20 V Power dissipation P tot 68 W Operating and storage temperature T j, T stg -55 ... +175 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 1.0 55/175/56 page 1 2006-07-18 IPD25N06S2-40 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 2.2 Thermal resistance, junction ambient, leaded R thJA - - 100 SMD version, device on PCB R thJA minimal footprint - - 75 6 cm2 cooling area2) - - 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - - Gate threshold voltage V GS(th) V DS=V GS, I D=26 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 - 1 100 V DS=55 V, V GS=0 V, T j=125 °C1) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=13 A, - 28.6 40 mΩ Rev. 1.0 page 2 2006-07-18 IPD25N06S2-40 Parameter Symbol Values Conditions Unit min. typ. max. - 513 - - 163 - Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 61 - Turn-on delay time t d(on) - 8 - Rise time tr - 20 - Turn-off delay time t d(off) - 18 - Fall time tf - 19 - Gate to source charge Q gs - 2.9 4 Gate to drain charge Q gd - 6.3 8 Gate charge total Qg - 14.0 18 Gate plateau voltage V plateau - 5.7 - V - - 29 A - - 116 V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=25 A, R G=22 Ω pF ns Gate Charge Characteristics1) V DD=44 V, I D=25 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD V GS=0 V, I F=25 A, T j=25 °C - 0.9 1.3 V Reverse recovery time1) t rr V R=30 V, I F=I S, di F/dt =100 A/µs - 31 - ns Reverse recovery charge1) Q rr V R=30 V, I F=I S, di F/dt =100 A/µs - 40 - nC 1) T C=25 °C Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-07-18 IPD25N06S2-40 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 10 V 30 70 60 50 40 I D [A] P tot [W] 20 30 10 20 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 100 Z thJC [K/W] I D [A] 1 µs 10 µs 100 µs 0.1 -1 10 0.05 0.02 1 ms 10 0.01 -2 10 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 10-7 page 4 2006-07-18 IPD25N06S2-40 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 60 120 10 V 7V 5.5 V 110 6.5 V 6V 50 100 6.5 V 90 80 R DS(on) [mΩ] I D [A] 40 30 6V 70 60 7V 20 50 5.5 V 40 10 5V 10 V 30 0 20 0 1 2 3 4 5 6 7 0 10 20 30 40 50 60 I D [A] V DS [V] 7 Typ. transfer characteristics 8 Typ. Forward transconductance I D = f(V GS); V DS = 6V g fs = f(I D); T j = 25°C parameter: T j parameter: g fs 50 32 175 °C 25 °C 40 28 -55 °C 24 30 I D [A] g fs [S] 20 16 20 12 8 10 4 0 0 2 3 4 5 6 7 Rev. 1.0 0 10 20 30 40 50 I D [A] V GS [V] page 5 2006-07-18 IPD25N06S2-40 9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(ON) = f(T j) V GS(th) = f(T j); V GS = V DS parameter: I D = 13 A; VGS = 10 V parameter: I D 60 4 3.5 50 130 µA 40 V GS(th) [V] R DS(on) [mΩ] 3 30 26 µA 2.5 2 20 1.5 10 1 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Typical forward diode characteristicis C = f(V DS); V GS = 0 V; f = 1 MHz IF = f(VSD) parameter: T j 104 103 103 102 I F [A] C [pF] Ciss Coss 102 101 Crss 175 °C 25 °C 100 0 5 10 15 20 25 30 V DS [V] Rev. 1.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V SD [V] page 6 2006-07-18 IPD25N06S2-40 13 Typical avalanche energy 14 Typ. gate charge E AS = f(T j) V GS = f(Q gate); I D = 25 A pulsed parameter: I D 400 12 350 10 300 11 V 8 250 200 V GS [V] E AS [mJ] 44 V 6.25 A 150 12.5 A 100 6 4 25 A 2 50 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 Q gate [nC] T j [°C] 15 Typ. drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) = f(T j); I D = 1 mA 66 V GS 64 Qg 62 V BR(DSS) [V] 60 58 56 54 Q gate 52 Q gs Q gd 50 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 7 2006-07-18 IPD25N06S2-40 Published by Infineon Technologies AG Am Campeon 1-12 D-85579 Neubiberg © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2006-07-18