IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A P-TO-220-3-45 2 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking Package 1200V 1A 0.09mJ 150°C K01H1202 P-TO-220-3-45 Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V Triangular collector current IC IKB01N120H2 Maximum Ratings A TC = 25°C, f = 140kHz 3.2 TC = 100°C, f = 140kHz 1.3 Pulsed collector current, tp limited by Tjmax ICpul s 3.5 Turn off safe operating area - 3.5 VCE ≤ 1200V, Tj ≤ 150°C IF Diode forward current TC = 25°C 3.2 TC = 100°C 1.3 Gate-emitter voltage VGE ±20 V Power dissipation Ptot 28 W -40...+150 °C TC = 25°C Operating junction and storage temperature Tj , Tstg Soldering temperature (reflow soldering, MSL1) - 2 220 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.3 May 06 IKB01N120H2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 4.5 K/W RthJCD 11 RthJA 40 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, Junction - case Thermal resistance, junction – ambient 1) Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 1200 - - T j =2 5 °C - 2.2 2.8 T j =1 5 0° C - 2.5 - V G E = 10 V , I C = 1 A, T j =2 5 °C - 2.4 - 2.1 3 3.9 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 3 00 µA Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 1 A Gate-emitter threshold voltage VGE(th) I C = 30 µA , V C E = V G E Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V Diode forward voltage VF V µA T j =2 5 °C - - 20 T j =1 5 0° C - - 80 V G E = 0, I F = 0 .5 A V T j =2 5 °C - 2.0 2.5 T j =1 5 0° C - 1.75 - Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 40 nA Transconductance gfs V C E = 20 V , I C = 1 A - 0.75 - S Input capacitance Ciss V C E = 25 V , - 91.6 - pF Output capacitance Coss V G E = 0V , - 9.8 - Reverse transfer capacitance Crss f= 1 MH z - 3.4 - Gate charge QGate V C C = 96 0 V, I C =1 A - 8.6 - nC - 7 - nH Dynamic Characteristic V G E = 15 V Internal emitter inductance LE measured 5mm (0.197 in.) from case 1) 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. Power Semiconductors 2 Rev. 2.3 May 06 IKB01N120H2 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. Typ. max. - 13 - - 6.3 - - 370 - - 28 - - 0.08 - - 0.06 - - 0.14 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 80 0 V, I C = 1 A, V G E = 15 V /0 V , R G = 24 1Ω , 2) L σ =1 8 0n H, 2) C σ = 4 0p F Energy losses include 3) “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 °C , - 83 - ns Diode reverse recovery charge Qrr V R = 8 00 V , I F = 1 A, - 89 - µC Diode peak reverse recovery current Irrm R G = 24 1Ω - 2.5 - A Diode current slope diF/dt - 289 - A/µs Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 178 - Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. Typ. max. - 12 - - 8.9 - - 450 - - 43 - - 0.11 - - 0.09 - - 0.2 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 5 0° C V C C = 80 0 V, I C = 1 A, V G E = 15 V /0 V , R G = 24 1Ω , 2) L σ =1 8 0n H, 2) C σ = 4 0p F Energy losses include 4) “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 5 0° C - 213 - ns Diode reverse recovery charge Qrr V R = 8 00 V , I F = 1 A, - 180 - µC Diode peak reverse recovery current Irrm R G = 24 1Ω - 2.7 - A Diode current slope diF/dt - 240 - A/µs Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 135 - 2 ) 4) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E Commutation diode from device IKP01N120H2 Power Semiconductors 3 Rev. 2.3 May 06 IKB01N120H2 Switching Energy ZVT, Inductive Load Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-off energy Eoff V C C = 80 0 V, mJ I C = 1 A, V G E = 15 V /0 V , R G = 24 1Ω , 2) C r =1 nF Power Semiconductors T j =2 5 °C - 0.02 - T j =1 5 0° C - 0.044 - 4 Rev. 2.3 May 06 IKB01N120H2 10A 5A t p =1 µs Ic 2 µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 4A 3A TC=80°C 2A 1A TC=110°C Ic 1A 5 µs 20 µs 0,1A 50 µs 200 µs DC ,01A 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 241Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 30W 4A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 25W 20W 15W 10W 5W 0W 25°C 50°C 75°C 100°C 125°C 2A 1A 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 3A 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 5 Rev. 2.3 May 06 5A 5A 4A 4A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT IKB01N120H2 VGE=15V 3A 12V 10V 8V 6V 2A 1A 0A 0V 1V 2V 3V 4V IC, COLLECTOR CURRENT 4A Tj=+150°C Tj=+25°C 3A 2A 1A 0A 3V 5V 7V 9V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Power Semiconductors 2A 1A 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) 12V 10V 8V 6V 3A 0A 0V 5V 5A VGE=15V 4V IC=2A 3V IC=1A 2V IC=0.5A 1V 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 Rev. 2.3 May 06 IKB01N120H2 1000ns td(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES td(off) 100ns tf td(on) tf 10ns td(on) tr 10ns tr 0A 1A 1ns 50Ω 2A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 241Ω, dynamic test circuit in Fig.E) 100Ω 150Ω 200Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 1A, dynamic test circuit in Fig.E) t, SWITCHING TIMES td(off) 100ns tf td(on) 10ns 0°C tr 50°C 100°C 150°C VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 6V Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 1A, RG = 241Ω, dynamic test circuit in Fig.E) Power Semiconductors 5V 4V 3V max. typ. 2V min. 1V 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.03mA) 7 Rev. 2.3 May 06 IKB01N120H2 1 E, SWITCHING ENERGY LOSSES ) Eon and Ets include losses due to diode recovery. 0.25mJ Ets 0.4mJ Eoff 1 Eon 0.2mJ Ets 1 0.20mJ 0.15mJ 1 Eon 0.10mJ Eoff 0.0mJ 0A 1A 2A 0.05mJ 50Ω 3A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 241Ω, dynamic test circuit in Fig.E ) ) Eon and Ets include losses due to diode recovery. Ets 1 0.15mJ 1 Eon 0.10mJ 0.05mJ 0.00mJ Eoff -40°C 25°C 100°C 150°C 200Ω IC=1A, TJ=150°C 0.04mJ IC=1A, TJ=25°C IC=0.3A, TJ=150°C 0.02mJ IC=0.3A, TJ=25°C 0.00mJ 0V/us 1000V/us 2000V/us 3000V/us dv/dt, VOLTAGE SLOPE Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 1A, RG = 241Ω, dynamic test circuit in Fig.E ) Power Semiconductors 150Ω 0.06mJ 1 0.20mJ 100Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 1A, dynamic test circuit in Fig.E ) Eoff, TURN OFF SWITCHING ENERGY LOSS 0.25mJ E, SWITCHING ENERGY LOSSES 1 ) Eon and Ets include losses due to diode recovery. 1 E, SWITCHING ENERGY LOSSES 0.6mJ Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig. E) 8 Rev. 2.3 May 06 IKB01N120H2 20V 0.2 0 10 K/W VGE, GATE-EMITTER VOLTAGE ZthJC, TRANSIENT THERMAL IMPEDANCE D=0.5 0.1 0.05 R,(K/W) 2.5069 1.1603 0.8327 0.02 -1 10 K/W 0.01 τ, (s) 0.00066 0.00021 0.00426 R1 single pulse C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 -2 10 K/W 1µs 10µs R2 100µs 1ms 10ms UCE=240V 15V 10V UCE=960V 5V 0V 0nC 100ms tp, PULSE WIDTH 5nC 10nC 15nC QGE, GATE CHARGE Figure 18. Typical gate charge (IC = 1A) Figure 17. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 1000V Ciss 10pF Coss Crss 0V 10V 20V 0.8A 600V 0.6A 400V 0.4A 0.2A 200V 0.0A 0V 30V 0.0 VCE, COLLECTOR-EMITTER VOLTAGE Figure 19. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) Power Semiconductors 800V ICE COLLECTOR CURRENT C, CAPACITANCE 100pF VCE, COLLECTOR-EMITTER VOLTAGE 1.0A 0.2 0.4 0.6 0.8 1.0 1.2 tp, PULSE WIDTH Figure 20. Typical turn off behavior, hard switching (VGE=15/0V, RG=220Ω, Tj = 150°C, Dynamic test circuit in Figure E) 9 Rev. 2.3 May 06 IKB01N120H2 800V 0.8A 600V 0.6A 400V 0.4A 0.2A 200V ICE COLLECTOR CURRENT VCE, COLLECTOR-EMITTER VOLTAGE 1.0A 0.0A 0V 0.0 0.4 0.8 1.2 1.6 ZthJC, TRANSIENT THERMAL RESISTANCE 1000V 1 10 K/W D=0.5 τ, (s) 9.29E-04 2.14E-04 4.81E-03 R,(K/W) 3.668 6.401 0.81 0.2 0.1 0.05 0 R1 R2 10 K/W 0.02 C1=τ1/R 1 C 2= τ 2/R 2 0.01 single pulse 10µs 100µs 1ms 10ms 2.0 tp, PULSE WIDTH Figure 21. Typical turn off behavior, soft switching (VGE=15/0V, RG=220Ω, Tj = 150°C, Dynamic test circuit in Figure E) tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 200uC 180ns Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 210ns TJ=150°C 150ns 120ns TJ=25°C 90ns 60ns 30ns 100Ohm 200Ohm TJ=150°C 160uC 140uC 120uC TJ=25°C 100uC 80uC 300Ohm RG, GATE RESISTANCE Figure 23. Typical reverse recovery time as a function of diode current slope VR=800V, IF=3A, Dynamic test circuit in Figure E) Power Semiconductors 180uC 100Ohm 200Ohm 300Ohm RG, GATE RESISTANCE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E) 10 Rev. 2.3 May 06 IKB01N120H2 4.0A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT -140A/us 3.5A T J =150°C 3.0A T J =25°C 2.5A 100O hm 200O hm TJ=150°C -160A/us -180A/us TJ=25°C -200A/us 100Ohm 300O hm RG, GATE RESISTANCE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E) 200Ohm 300Ohm RG, GATE RESISTANCE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E) 3.0V IF=1A T J =150°C 2.5V VF, FORWARD VOLTAGE IF, FORWARD CURRENT 4A 2A T J =25°C 0A 0V IF=0.5A 2.0V IF=0.25A 1.5V 1.0V 1V 2V 3V 4V -50°C 5V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature 11 Rev. 2.3 May 06 IKB01N120H2 P-TO220-3-45 Power Semiconductors 12 Rev. 2.3 May 06 IKB01N120H2 i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF 10% Ir r m QF dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 τn r2 rn Tj (t) p(t) r2 r1 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit ½ Lσ öö DUT (Diode) L Cσ Cr VDC RG DUT (IGBT) ½ Lσ Figure E. Dynamic test circuit Leakage inductance Lσ = 180nH, Stray capacitor Cσ = 40pF, Relief capacitor Cr = 1nF (only for ZVT switching) Figure B. Definition of switching losses Power Semiconductors 13 Rev. 2.3 May 06 IKB01N120H2 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 5/17/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 Rev. 2.3 May 06