BUP 400 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code BUP 400 600V 22A TO-220 AB C67078-A4403-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values Unit 600 V 600 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 22 TC = 90 °C 14 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 44 TC = 90 °C 28 EAS Avalanche energy, single pulse mJ IC = 10 A, VCC = 50 V, RGE = 25 Ω L = 350 µH, Tj = 25 °C 18 Ptot Power dissipation TC = 25 °C W 100 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 °C Jul-31-1996 BUP 400 Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values Unit E - 55 / 150 / 56 Thermal Resistance ≤ 1.25 RthJC Thermal resistance, chip case K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 0.35 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 10 A, Tj = 25 °C - 2.1 2.7 VGE = 15 V, IC = 10 A, Tj = 125 °C - 2.2 2.8 VGE = 15 V, IC = 20 A, Tj = 25 °C - 3 - VGE = 15 V, IC = 20 A, Tj = 125 °C - 3.3 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES VCE = 600 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current µA - - 40 IGES VGE = 25 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 10 A Input capacitance 2 pF - 570 760 - 80 120 - 50 75 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-31-1996 BUP 400 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 300 V, VGE = 15 V, IC = 10 A RGon = 100 Ω Rise time - 45 70 - 60 90 - 250 340 - 500 680 tr VCC = 300 V, VGE = 15 V, IC = 10 A RGon = 100 Ω Turn-off delay time td(off) VCC = 300 V, VGE = -15 V, IC = 10 A RGoff = 100 Ω Fall time tf VCC = 300 V, VGE = -15 V, IC = 10 A RGoff = 100 Ω Semiconductor Group 3 Jul-31-1996 BUP 400 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 26 110 A W 22 Ptot 90 IC 80 20 18 70 16 60 14 50 12 10 40 8 30 6 20 4 10 0 0 2 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C TC 160 TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 1 10 2 t = 5.1µs p K/W A 10 µs IC ZthJC 10 0 10 1 10 -1 100 µs D = 0.50 0.20 10 0 0.10 single pulse 1 ms 0.05 10 -2 0.02 0.01 10 ms DC 10 -1 0 10 10 1 10 2 V 10 10 -3 -5 10 3 VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-31-1996 BUP 400 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 20 20 A IC 16 14 A 17V 15V 13V 11V 9V 7V IC 16 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 20 A IC 16 14 12 10 8 6 4 2 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Jul-31-1996 BUP 400 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω par.: VCE = 300 V, VGE = ± 15 V, IC = 10 A 10 3 10 3 tdoff tf t tf t ns ns tdoff tr tr 10 2 10 2 tdon tdon 10 1 0 5 10 15 A 10 1 0 25 50 100 150 200 250 300 Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω E 2.0 mWs mWs 1.6 E 1.2 400 par.: VCE = 300V, VGE = ± 15 V, IC = 10 A 2.0 1.4 Ω RG IC 1.6 Eoff 1.4 Eon 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 Eoff Eon 0.0 0 5 10 15 A 25 0 IC Semiconductor Group 50 100 150 200 250 300 Ω 400 RG 6 Jul-31-1996 BUP 400 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 10 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 20 V nF VGE 16 C 100 V 14 300 V 10 0 12 Ciss 10 8 10 -1 6 Coss Crss 4 2 0 0 10 20 30 40 nC 55 10 -2 0 5 10 15 20 25 30 V 40 VCE Q Gate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V 10 2.5 I Csc/I C(90°C) I Cpuls/I C 6 1.5 4 1.0 2 0.5 0 0.0 0 100 200 Semiconductor Group 300 400 500 600 V 800 VCE 7 0 100 200 300 400 500 600 V 800 VCE Jul-31-1996 BUP 400 Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Jul-31-1996