BYP 303 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 303 1200V 65A 140ns TO-218 AD C67047-A2253-A2 Maximum Ratings Parameter Symbol Mean forward current IFAV TC = 90 °C, D = 0.5 Values A 40 RMS forward current IFRMS Surge forward current, sine halfwave, aperiodic IFSM Tj = 100 °C, f = 50 Hz 65 170 IFRM Repetitive peak forward current Tj = 100 °C, tp ≤ 10 µs 370 ∫i2dt i 2t value Tj = 100 °C, tp = 10 ms A2s 145 Repetitive peak reverse voltage VRRM 1200 Surge peak reverse voltage VRSM 1200 Power dissipation Ptot TC = 90 °C V W 120 Chip or operating temperature Tj -40 ... + 150 Storage temperature Tstg -40 ... + 150 Thermal resistance, chip case RthJC ≤ 0.5 Thermal resistance, chip-ambient RthJA ≤ 46 DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - Semiconductor Group Unit 1 °C K/W - 40 / 150 / 56 12.96 BYP 303 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Forward voltage drop VF V IF = 25 A, Tj = 25 °C - 2 - IF = 40 A, Tj = 25 °C - 2.2 2.8 IF = 25 A, Tj = 100 °C - 1.6 - IF = 40 A, Tj = 100 °C - 1.8 - Reverse current IR mA VR = 1200 V, Tj = 25 °C - 0.01 0.25 VR = 1200 V, Tj = 100 °C - 0.05 - VR = 1200 V, Tj = 150 °C - 0.15 - AC Characteristics Reverse recovery charge Qrr µC IF = 40 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C Peak reverse recovery current - 6 - IRRM A IF = 40 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C Reverse recovery time - 60 - trr ns IF = 40 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C Storage time - 140 - - 70 - tS IF = 40 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C Softfaktor S - IF = 40 A, VCC = 500 V, diF/dt = -1000 A/µs Tj = 100 °C Semiconductor Group - 2 1 - 12.96 BYP 303 Typ. forward characteristics Typ. reverse current IF = f (VF) IRRM = f (diF / dt) parameter: Tj parameter: VCC = 500 V,IF = 40 A, Tj = 100 °C 10 3 80 A A IF IRRM 10 2 60 Tj=100°C 25°C 50 10 1 40 30 10 0 20 10 10 -1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V VF 0 1 10 4.0 10 2 10 3 A/us diF/dt Typ. reverse recovery charge Qrr = f (diF / dt) parameter: VCC = 500 V,IF = 40 A, Tj = 100 °C 7.0 uC 6.0 Qrr 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 10 10 Semiconductor Group 2 10 3 A/us diF/dt 3 12.96