VS-6EWH06FN-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt® FEATURES • Hyperfast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation • Low forward voltage drop 1 N/C 3 Anode • Low leakage current TO-252AA (D-PAK) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY Package State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. TO-252AA (D-PAK) IF(AV) 6A VR 600 V VF at IF 1.26 V trr (typ.) 18 ns TJ max. 175 °C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 144 °C Non-repetitive peak surge current IFSM TJ = 25 °C 70 Peak repetitive forward current IFM TC = 144 °C, f = 20 kHz, d = 50 % 12 Operating junction and storage temperatures TJ, TStg 6 A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 100 μA IF = 6 A MIN. TYP. MAX. 600 - - - 1.60 2.1 IF = 6 A, TJ = 150 °C - 1.26 1.7 VR = VR rated - - 50 TJ = 150 °C, VR = VR rated - - 250 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 600 V - 3.5 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Revision: 08-Jul-15 Document Number: 93514 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWH06FN-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time Reverse recovery charge TYP. MAX. - 18 25 UNITS IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 22 - TJ = 25 °C - 27 - - 37 - - 4.1 - - 5.3 - TJ = 25 °C - 57 - TJ = 125 °C - 103 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C RthJC - - 3 °C/W trr TJ = 125 °C Peak recovery current MIN. IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 6 A dIF/dt = 200 A/μs VR = 390 V ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg SYMBOL TEST CONDITIONS Approximate weight Marking device Case style TO-252AA (D-PAK) 0.3 g 0.01 oz. 6EWH06FN Revision: 08-Jul-15 Document Number: 93514 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWH06FN-M3 Vishay Semiconductors 100 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 1 TJ = 125 °C TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 75 °C 0.01 TJ = 50 °C TJ = 25 °C TJ = 25 °C 0.1 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 08-Jul-15 Document Number: 93514 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWH06FN-M3 Vishay Semiconductors 40 180 170 35 DC 6 A, TJ = 125 °C 160 35 150 trr (ns) Allowable Case Temperature (°C) www.vishay.com 140 130 25 20 Square wave (D = 0.50) 80 % rated VR applied 6 A, TJ = 25 °C 15 120 See note (1) 110 0 2 4 6 8 10 100 10 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 200 14 RMS limit 180 12 160 10 140 Qrr (nC) Average Power Loss (W) 1000 8 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 6 4 2 3 6 120 100 80 60 40 6 A, TJ = 25 °C 20 0 0 6 A, TJ = 125 °C 9 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 0 100 1000 dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 08-Jul-15 Document Number: 93514 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWH06FN-M3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 08-Jul-15 Document Number: 93514 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EWH06FN-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 6 E W H 06 FN 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (6 = 6 A) 3 - Circuit configuration: TRL -M3 8 9 E = single diode 4 - Package identifier: 5 - H = hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - FN = TO-252AA 8 - None = tube W = D-PAK TR = tape and reel TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-6EWH06FN-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-6EWH06FNTR-M3 2000 2000 13" diameter reel VS-6EWH06FNTRL-M3 3000 3000 13" diameter reel VS-6EWH06FNTRR-M3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95187 Revision: 08-Jul-15 Document Number: 93514 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) A E b3 Pad layout C A (3) 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 3 (2) L5 b 1 A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL 2 0.488 (12.40) 0.409 (10.40) 0.089 MIN. (2.28) Detail “C” 2x e 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 MILLIMETERS INCHES C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 1.40 1.78 0.055 0.070 2.29 BSC MIN. MAX. 0.090 BSC b 0.64 0.89 0.025 0.035 L b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 3 2.74 BSC L2 0.51 BSC NOTES 0.108 REF. 0.020 BSC D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252AA Revision: 05-Dec-12 Document Number: 95016 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000