INFINEON PZT2907

PNP Silicon Switching Transistors
PZT 2907
PZT 2907 A
High DC current gain: 0.1 mA to 500 mA
● Low collector-emitter saturation voltage
● Complementary types: PZT 2222 (NPN)
PZT 2222 A (NPN)
●
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
Package1)
PZT 2907
PZT 2907 A
ZT 2907
ZT 2907 A
Q62702-Z2028
Q62702-Z2025
B
SOT-223
C
E
C
Maximum Ratings
Parameter
Symbol
Values
PZT 2907
PZT 2907 A
Unit
Collector-emitter voltage
VCE0
40
V
Collector-base voltage
VCB0
60
Emitter-base voltage
VEB0
5
Collector current
IC
600
mA
Total power dissipation, TS = 110 ˚C
Ptot
1.5
W
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
60
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Rth JA
≤
87
Junction - soldering point
Rth JS
≤
27
1)
2)
K/W
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
PZT 2907
PZT 2907 A
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
40
60
–
–
–
–
60
60
–
–
–
–
5
–
–
–
–
–
–
–
–
–
–
20
10
20
10
nA
nA
µA
µA
nA
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
PZT 2907
PZT 2907 A
V(BR)CE0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
PZT 2907
PZT 2907 A
V(BR)CB0
Emitter-base breakdown voltage
IE = 10 µA, IE = 0
V(BR)EB0
Collector-base cutoff current
VCB = 50 V, IE = 0
ICB0
VCB = 50 V, IE = 0, TA = 150 ˚C
PZT 2907
PZT 2907 A
PZT 2907
PZT 2907 A
V
Emitter-base cutoff current
VEB = 3 V, IC = 0
IEB0
–
–
10
Collector-emitter cutoff current
VCE = 30 V, + VBE = 0.5 V
ICEV
–
–
50
Collector-base cutoff current
VCE = 30 V, + VBE = 0.5 V
IEBV
–
–
50
35
75
50
100
75
100
100
100
30
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
300
300
–
–
DC current gain1)
IC = 0.1 mA, VCE = 10 V
IC =
1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
–
hFE
PZT 2907
PZT 2907 A
PZT 2907
PZT 2907 A
PZT 2907
PZT 2907 A
PZT 2907
PZT 2907 A
PZT 2907
PZT 2907 A
2
PZT 2907
PZT 2907 A
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
–
–
–
–
0.4
1.6
–
–
–
–
1.3
2.6
DC characteristics
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
Base-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBEsat
V
AC characteristics
Transition frequency
IC = 20 mA, VCE = 20 V, f = 100 MHz
fT
200
–
–
MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Cobo
–
–
8
pF
Input capacitance
VEB = 0.5 V, f = 1 MHz
Cibo
–
–
30
td
tr
–
–
–
–
10
40
ns
ns
tstg
tf
–
–
–
–
80
30
ns
ns
VCC = 30 V, IC = 150 mA, IB1 = 15 mA
Delay time
Rise time
VCC = 6 V, IC = 150 mA, IB1 = IB2 = 15 mA
Storage time
Fall time
(see diagrams)
1)
Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
PZT 2907
PZT 2907 A
Input waveform and test circuit for determining delay, rise and turn-on time
Turn-on time when switched to –ICon = 150 mA; – IBon = 15 mA
Input waveform and test circuit for determining storage, fall and turn-off time
Turn-off time when switched to – ICon = 150 mA;
– IBon = 15 mA to cut-off with + IBoff = 15 mA
Pulse generator:
duty factor
pulse duration
rise time
output impedance
Semiconductor Group
Oscillograph:
rise time
output impedance
D=2%
tp = 200 ns
tr ≤ 2 ns
Zo = 50 Ω
4
tr ≤ 5 ns
Zi = 10 MΩ
PZT 2907
PZT 2907 A
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Transition frequency fT = f (IC)
VCE = 20 V, f = 100 MHz
Saturation voltage IC = f (VBEsat, VCEsat)
hFE = 10
DC current gain hFE = f (IC)
VCE = 10 V
Semiconductor Group
5
PZT 2907
PZT 2907 A
Permissible pulse load Ptot max/Ptot DC = f (tp)
Semiconductor Group
6