NPN Silicon High-Voltage Transistors PZTA 42 PZTA 43 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: PZTA 92, PZTA 93 (PNP) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZTA 42 PZTA 43 PZTA 42 PZTA 43 Q62702-Z2035 Q62702-Z2036 B SOT-223 C E C Maximum Ratings Parameter Symbol PZTA 42 Values PZTA 43 Unit Collector-emitter voltage VCE0 300 200 V Collector-base voltage VCB0 300 200 Emitter-base voltage VEB0 Collector current IC 500 Base current IB 100 Total power dissipation, TS = 124 ˚C Ptot 1.5 W Junction temperature Tj 150 ˚C Storage temperature range Tstg 6 mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 72 Junction - soldering point Rth JS ≤ 17 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZTA 42 PZTA 43 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 300 200 – – – – 300 200 – – – – 6 – – – – – – – – – – 100 100 20 20 nA nA µA µA – – 100 nA 25 40 40 – – – – – – DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 PZTA 42 PZTA 43 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA, IB = 0 PZTA 42 PZTA 43 V(BR)CB0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 V(BR)EB0 Collector-base cutoff current VCB = 200 V VCB = 160 V VCB = 200 V, TA = 150 ˚C VCB = 160 V, TA = 150 ˚C ICB0 PZTA 42 PZTA 43 PZTA 42 PZTA 43 Emitter-base cutoff current VEB = 3 V, IC = 0 IEB0 DC current gain1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V hFE Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA PZTA 42 PZTA 43 VCEsat Base-emitter saturation voltage IC = 20 mA, IB = 2 mA V – V – – – – 0.5 0.4 VBEsat – – 0.9 Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz fT – 70 – Collector-base capacitance VCB = 20 V, f = 1 MHz Cobo – – – – 3 4 AC characteristics 1) PZTA 42 PZTA 43 Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 MHz pF PZTA 42 PZTA 43 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Permissible pulse load Ptot max / Ptot DC = f (tp) DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 3 PZTA 42 PZTA 43 Collector cutoff current ICB0 = f (TA) VCB = 160 V Semiconductor Group Collector current IC = f (VBE) VCE = 10 V 4