EVBUM2242/D - 455 KB

AMIS-3910XGEVB
AMIS-3910XGEVB
Evaluation Board
User'sManual
Introduction
http://onsemi.com
The AMIS−3910XGEVB evaluation board demonstrates
the AMIS−39101 high side driver in SOIC package. The
evaluation board includes all external components needed
for operating AMIS−39101 and to demonstrate the small
PCB surface area such an implementation requires.
EVAL BOARD USER’S MANUAL
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Overview
The AMIS−39101 is a robust high side driver featuring
eight independent high current output drive channels along
with a number of integrated fault protection circuits. This
highly integrated product is designed for controlled delivery
of power to a large variety of loads in industrial applications
including motors, relays and LED arrays, among others.
With all driver output channels in the conducting state, each
channel can source up to 350 mA of continuous current
(resistive load). In cases where all output drivers are not
active, higher output current per channel can be achieved
provided that the thermal limits of the device are not
exceeded.
The device can be interfaced to a variety of
microcontrollers via the serial interface link, in turn
allowing for monitoring and controlling the state of each of
the output drivers individually. In this case, at the onset of a
potential hazardous situation the drivers are switched off
and the diagnostic state of the drivers can be extracted via the
serial interface.
Serial Interface
Short−circuit Protection
Diagnostic Features
Power−down Mode
Internal Thermal Shutdown
3.3 V and 5 V Microcontroller Compliant
Excellent System ESD
Automotive Compliant
Temperature Range of −40°C to +150°C
Available in 28−pin SOIC
These are Pb−Free Devices
Features
• Eight High Side Output Drivers
• Up to 830 mA Continuous Current per Driver Pair
(Resistive Load)
• Charge Pump with One External Capacitor
Figure 1. The AMIS−3910XGEVB Evaluation Board
ELECTRICAL CHARACTERISTICS
Table 1. ELECTRICAL CHARACTERISTICS OF THE AMIS−3910XGEVB BOARD
Value
Symbol
Parameter / Condition
Min
Typ
Max
5.5 V
24 V
35 V
V_BAT Voltage
VBAT
V_BAT Voltage
Current Drawn from V_BAT
IBAT
Total Current Consumption
4 mA
3.75 A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 1
1
Publication Order Number:
EVBUM2242/D
AMIS−3910XGEVB
AMIS−39101 DESCRIPTION
It is designed with an array of integrated protection features
including overtemperature and overcurrent detection and
shutdown. The integrated charge pump requires only one
external capacitor and provides for operation of the critical
fault protection circuitry even in case of low supply
voltages. The device can be interfaced to a variety of
microcontrollers via the serial interface link, in turn
allowing for monitoring and controlling the state of each of
the output drivers individually. In this case, at the onset of a
potential hazardous situation the drivers are switched off
and the diagnostic state of the drivers can be extracted via the
serial interface. The device also features a power down
mode for reduced power consumption and has high built−in
electrostatic discharge (ESD) protection capability for
robust operation.
The AMIS−39101 is a robust high side driver featuring
eight independent high current output drive channels along
with a number of integrated fault protection circuits. This
highly integrated product is designed for controlled delivery
of power to a large variety of loads in industrial applications
including motors, relays and LED arrays, among others.
With all driver output channels in the conducting state, each
channel can source up to 350 mA of continuous current
(resistive load). In cases where all output drivers are not
active, higher output current per channel can be achieved
provided that the thermal limits of the device are not
exceeded.
Furthermore, in order to minimize system cost each
output driver has built−in fly−back diodes. The device
withstands short circuits to ground and supply, respectively.
AMIS−3910XGEVB DESCRIPTION
BOM List
Table 2. AMIS−3910XGEVB BILL OF MATERIALS
Quantity
Reference
Part
Footprint
Comments
Manufacturer
Product Code
5
C1, C2, C3,
C4, C5
10 mF
C1210
50 V
Murata
GRM32DF51H106ZA01L
9
C6, C7, C8,
C9, C10, C11,
C12, C14, C15
100 nF
C0603
50 V
Murata
GRM188F51H104ZA01D
1
C13
22 nF
C0603
50 V
Murata
GRM188R71H223KA01D
8
D1, D2, D3,
D4, D7, D8,
D9, D10
MURA140T3G
SMA
ON Semiconductor
MURA140T3G
1
D5
MBRS4201T3G
SMC
ON Semiconductor
MBRS4201T3G
1
D6
P6SMB30CAT3G
SMB
ON Semiconductor
P6SMB30CAT3G
1
J1
NEB 21 R
DC Jack
Lumberg
NEB 21 R
1
J3
Terminal
block
Molex
95009−2661
1
J2
Header,
16P
Wuerth Elektronik
613 016 211 21
1
J5
Header, 2P
Wuerth Elektronik
613 002 111 21
1
J4
Header, 6P
Wuerth Elektronik
613 006 111 21
1
P1
Wuerth Elektronik
691 216 510 002
9
LED1, LED2,
LED3, LED4,
LED5, LED6,
LED7, LED8,
LED9
LED0603
Green
Wuerth Elektronik
150060GS75000
2
R5, R10
1 kW
R0603
100 mW
Multicomp
MCMR06X1001FTL
9
R1, R2, R3,
R4, R6, R7,
R8, R9, R11
10 kW
R0603
100 mW
Multicomp
MCMR06X1002FTL
1
U1
NCV4274AST33T3G
SOT−223
LDO, 3.3 V
ON Semiconductor
NCV4274AST33T3G
1
U2
AMIS−39101
SOIC28
ON Semiconductor
AMIS39101PNPB4RG
http://onsemi.com
2
AMIS−3910XGEVB
Schematic Diagram
Figure 2. Schematic of AMIS−3910XGEVB
http://onsemi.com
3
AMIS−3910XGEVB
APPENDIX
Evaluation Board Layout
Figure 3. Top Layer Layout
Figure 4. Bottom Layer Layout
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EVBUM2242/D