IDP06E60 IDB06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2. • 175°C operating temperature • Easy paralleling Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 IDP06E60 P-TO220-2-2. Q67040-S4480 D06E60 C A - IDB06E60 P-TO220-3.SMD Q67040-S4481 D06E60 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage VRRM Continous forward current IF Value 600 V A TC=25°C 14.7 TC=90°C 10 Surge non repetitive forward current Unit I FSM 29 I FRM 22 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 46.9 TC=90°C 26.6 Operating and storage temperature Soldering temperature Tj , Tstg TS 1.6mm(0.063 in.) from case for 10s Rev.2 Page 1 -55...+175 255 °C °C 2003-07-31 IDP06E60 IDB06E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 3.2 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 500 Forward voltage drop VF V IF=6A, Tj=25°C - 1.5 2 IF=6A, Tj=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2 Page 2 2003-07-31 IDP06E60 IDB06E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=400V, IF=6A, di/dt=550A/µs, Tj=25°C - 70 - V R=400V, IF=6A, di/dt=550A/µs , Tj=125°C - 100 - V R=400V, IF=6A, di/dt=550A/µs , Tj=150°C - 105 - Peak reverse current A I rrm V R=400V, IF=6A, di/dt=550A/µs, Tj=25°C - 6.5 - V R=400V, IF=6A, di/dt=550A/µs, Tj=125°C - 7.4 - V R=400V, IF=6A, di/dt=550A/µs, Tj=150°C - 7.9 - Reverse recovery charge nC Q rr V R=400V, IF=6A, di/dt=550A/µs, Tj=25°C - 240 - V R=400V, IF=6A, di/dt=550A/µs, Tj=125°C - 360 - V R=400V, IF=6A, di/dt=550A/µs, Tj=150°C - 400 - V R=400V, IF=6A, di F/dt=550A/µs, Tj=25°C - 4 - V R=400V, IF=6A, di F/dt=550A/µs, Tj=125°C - 4.8 - V R=400V, IF=6A, di F/dt=550A/µs, Tj=150°C - 4.9 - Reverse recovery softness factor Rev.2 S Page 3 2003-07-31 IDP06E60 IDB06E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj ≤ 175°C 50 16 W A 40 12 IF P tot 35 30 10 25 8 20 6 15 4 10 2 5 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 2 18 V A 14 1.8 -55°C 25°C 100°C 150°C 1.7 VF IF 12 12A 1.6 10 6A 1.5 8 1.4 6 1.3 3A 4 1.2 2 0 0 1.1 0.5 1 1.5 2.5 V VF Rev.2 Page 4 1 -60 -20 20 60 100 160 °C Tj 2003-07-31 IDP06E60 IDB06E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 300 550 nC ns 12A 500 12A 6A 3A Qrr trr 200 475 150 450 425 400 6A 375 100 350 325 50 300 3A 275 0 200 300 400 500 600 A/µs 250 200 800 300 400 500 600 800 A/µs diF/dt di F/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 11 11 A 9 12A 6A 3A 12A 6A 3A 8 8 S Irr 9 7 6 7 5 6 4 3 5 2 4 3 200 1 300 400 500 600 A/µs 800 di F/dt Rev.2 Page 5 0 200 300 400 500 600 700 800 A/µs 1000 diF/dt 2003-07-31 IDP06E60 IDB06E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP06E60 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 single pulse 0.02 10 -3 0.01 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2 Page 6 2003-07-31 IDP06E60 IDB06E60 TO-220-2-2 N A P dimensions [mm] symbol E D U H B V F W X J L max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L 1.05 typ. M 2.54 typ. 0.1 typ. N 4.4 typ. 0.173 typ. P G T C Rev.2 M 1.10 1.40 0.41 typ. 0.0433 0.0551 2.4 typ. 0.095 typ. 0.26 typ. U 6.6 typ. V 13.0 typ. 0.51 typ. W 7.5 typ. 0.295 typ. X T [inch] min 0.00 0.40 0.0000 0.0157 K Page 7 2003-07-31 IDP06E60 IDB06E60 TO-220-3-45 (P-TO220SMD) dimensions [mm] symbol min A max B 0.3858 0.3937 0.0512 typ. C 1.25 0.0492 D 0.95 1.15 2.54 typ. 0.0374 0.0453 0.1 typ. G 0.72 0.85 5.08 typ. 0.0283 0.0335 0.2 typ. H 4.30 4.50 0.1693 K 1.28 1.40 0.0504 0.0551 L 9.00 9.40 0.3543 0.3701 M N 2.30 2.50 14.1 typ. 0.0906 0.0984 0.5551 typ. P 0.00 0.0000 Q R 3.30 3.90 8° max 0.1299 0.1535 8° max S 1.70 0.0669 T U 0.50 0.65 10.8 typ. 0.0197 0.0256 0.4252 typ. V 1.35 typ. 0.0532 typ. W 6.43 typ. 0.2532 typ. X 4.60 typ. 0.1811 typ. Y 9.40 typ. 0.3701 typ. Z 16.15 typ. 0.6358 typ. F Page 8 min 9.80 10.00 1.3 typ. E Rev.2 [inch] max 1.75 0.20 2.50 0.0689 0.1772 0.0079 0.0984 2003-07-31 IDP06E60 IDB06E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2 Page 9 2003-07-31