SPA07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS(on),max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 FP • High peak current capability • Qualified according to JEDEC1) for target applications CoolMOS CFD designed for: • Soft switching PWM Stages • LCD & CRT TV Type Package Marking SPA07N60CFD PG-TO220FP 07N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current 2) ID Value T C=25 °C 6.6 T C=100 °C 4.3 Pulsed drain current3) I D,pulse T C=25 °C 17 Avalanche energy, single pulse E AS I D=3.3 A, V DD=50 V 230 Avalanche energy, repetitive3),4) E AR I D=6.6 A, V DD=50 V 0.5 Avalanche current, repetitive3),4) I AR Drain source voltage slope dv /dt Reverse diode dv /dt dv /dt Maximum diode commutation speed Gate source voltage mJ 6.6 A 80 V/ns 40 V/ns di /dt 600 A/µs V GS static ±20 V AC (f >1 Hz) ±30 T C=25 °C 32 W -55 ... 150 °C P tot Operating and storage temperature T j, T stg Rev. 1.0 A I S=6.6 A, V DS=480 V, T j=125 °C Power dissipation Mounting torque I D=6.6 A, V DS=480 V, T j=125°C Unit M3 & M3.5 screws page 1 50 Ncm 2007-01-26 SPA07N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 3.9 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 62 Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C 600 - - V K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=6.6 A - 700 - Gate threshold voltage V GS(th) V DS=V GS, I D=300 µA 3 4 5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - 0.6 - V DS=600 V, V GS=0 V, T j=150 °C - 630 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=4.6 A, T j=25 °C - 0.59 0.7 Ω V GS=10 V, I D=4.6 A, T j=150 °C - 1.6 - Gate resistance RG f =1 MHz, open drain - 1.2 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=4.6 A - 5.0 - Rev. 1.0 page 2 S 2007-01-26 SPA07N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - 790 - - 260 - - 16 - - 30 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) C o(tr) - 55 - Turn-on delay time t d(on) - 12 - Rise time tr - 25 - Turn-off delay time t d(off) - 36 - Fall time tf - 9 - Gate to source charge Q gs - 6.6 - Gate to drain charge Q gd - 20 - Gate charge total Qg - 35 47 Gate plateau voltage V plateau - 7.2 - V GS=0 V, V DS=25 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=6.6 A, R G=6.8 Ω ns Gate Charge Characteristics V DD=480 V, I D=6.6A, V GS=0 to 10 V 1) J-STD20 and JESD22 2) Limited only by maximum temperature 3) Pulse width t p limited by T j,max 4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.0 page 3 nC V 2007-01-26 SPA07N60CFD Parameter Values Symbol Conditions Unit min. typ. max. - - 6.6 - - 17 - 1.0 1.2 V - 104 - ns - 0.5 - µC - 8 - A - 1000 - A/µs Reverse Diode Diode continuous forward current 2) IS Diode pulse current 3) I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm Peak rate of fall of reverse recovery current di rr / dt Rev. 1.0 T C=25 °C V GS=0 V, I F=I S, T j=25 °C V R=480 V, I F=I S, di F/dt =100 A/µs T j=25 °C page 4 A 2007-01-26 SPA07N60CFD 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 40 102 limited by on-state resistance 1 µs 30 101 I D [A] P tot [W] 10 µs 20 100 µs 1 ms 10 10 ms 0 DC 10 10-1 0 0 40 80 120 100 160 101 102 103 V DS [V] T C [°C] 3 Max. transient thermal impedance 4 Typ. output characteristics I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 101 20 20 V 0.5 10 V 100 Z thJC [K/W] 15 0.2 I D [A] 0.1 0.05 8V 10 0.02 10-1 0.01 7V 5 single pulse 6.5 V 6V 5.5 V 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t p [s] Rev. 1.0 5V 0 0 5 10 15 20 V DS [V] page 5 2007-01-26 SPA07N60CFD 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 2.8 12 20 V 10 10 V 8V 6 R DS(on) [Ω] I D [A] 8 2.4 7V 7V 6.5 V 2 6V 5V 5.5 V 6.5 V 4 2 10 V 1.6 6V 20 V 5.5 V 5V 1.2 0 0 5 10 15 0 20 2 4 V DS [V] 6 8 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=4.6 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 2 24 1.8 25 °C 20 1.6 16 1.2 I D [A] R DS(on) [Ω] 1.4 1 0.8 12 150 °C typ 98 % 8 0.6 0.4 4 0.2 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 0 4 8 12 16 20 V GS [V] page 6 2007-01-26 SPA07N60CFD 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6.6 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 120 V 8 480 V 150 °C, 98% 25 °C 101 6 I F [A] V GS [V] 150 °C 25 °C, 98% 4 100 2 10-1 0 0 5 10 15 20 25 0 30 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche SOA 12 Avalanche energy I AR=f(t AR) E AS=f(T j); I D=3.3 A; V DD=50 V parameter: T j(start) 7 250 6 200 150 4 3 125 °C E AS [mJ] I AV [A] 5 25 °C 100 2 50 1 0 10-3 0 10-2 10-1 100 101 102 103 104 t AR [µs] Rev. 1.0 25 50 75 100 125 150 175 T j [°C] page 7 2007-01-26 SPA07N60CFD 14 Typ. capacitances V BR(DSS)=f(T j); C =f(V DS); V GS=0 V; f =1 MHz 700 104 660 103 C [pF] V BR(DSS) [V] 13 Drain-source breakdown voltage 620 102 Coss 580 101 540 100 -60 -20 20 60 100 140 Ciss Crss 0 180 100 T j [°C] 200 300 400 500 V DS [V] 15 Typ. C oss stored energy 16 Typ. reverse recovery charge E oss= f(V DS) Q rr=f(T j);parameter: I D =6.6 A 0.7 6 5 0.65 Q rr [µC] E oss [µJ] 4 3 0.6 2 0.55 1 0 0.5 0 100 200 300 400 500 600 V DS [V] Rev. 1.0 25 50 75 100 125 T j [°C] page 8 2007-01-26 SPA07N60CFD 17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Q rr=f(I S); parameter: di/ dt =100 A/µs Q rr=f(di /dt ); parameter: I D=6.6 A 0.8 1.1 0.7 1 125 °C 0.9 125 °C Q rr [µC] Q rr [µC] 0.6 0.5 0.8 25 °C 0.4 0.7 0.3 0.6 0.5 0.2 2 3 4 5 6 I S [A] Rev. 1.0 25 °C 100 300 500 700 900 d i/d t [A/µs] page 9 2007-01-26 SPA07N60CFD Definition of diode switching characteristics Rev. 1.0 page 10 2007-01-26 SPA07N60CFD PG-TO220-3-31; -3-111: Outlines/Fully isolated package (2500VAC; 1 minute) Dimensions in mm/ inches Rev. 1.0 page 11 2007-01-26 SPA07N60CFD Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 12 2007-01-26