Low-Drop Voltage Regulator TLE 4276 Features • • • • • • • Output voltage tolerance ≤ ± 4% Low-drop voltage Inhibit input Very low current consumption Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics Type Ordering Code Package TLE 4276 V50 Q67000-A9262 P-TO220-5-3 TLE 4276 V85 Q67000-A9263 P-TO220-5-3 TLE 4276 V10 Q67000-A9264 P-TO220-5-3 P-TO220-5-3 TLE 4276 G V50 Q67006-A9266 P-TO220-5-122 TLE 4276 G V85 Q67006-A9268 P-TO220-5-122 TLE 4276 G V10 Q67006-A9270 P-TO220-5-122 P-TO220-5-43 TLE 4276 S V50 Q67000-A9267 P-TO220-5-43 TLE 4276 S V85 Q67000-A9269 P-TO220-5-43 TLE 4276 S V10 Q67000-A9271 P-TO220-5-43 TLE 4276 V Q67000-A9265 P-TO220-5-3 TLE 4276 SV Q67000-A9273 P-TO220-5-43 TLE 4276 GV Q67006-A9272 P-TO220-5-122 ▼ TLE 4276 D V50 Q67006-A9358 P-TO252-5-1 ▼ TLE 4276 DV P-TO220-5-122 Q67006-A9361 P-TO252-5-1 SMD = Surface Mounted Device ▼ New type P-TO252-5-1 (D-PAK) Semiconductor Group 1 1998-11-01 TLE 4276 Functional Description The TLE 4276 is a low-drop voltage regulator in a TO220 package. The IC regulates an input voltage up to 40 V to VQrated = 5.0 V (V50), 8.5 V (V85), 10 V (V10) and adjustable voltage (V). The maximum output current is 400 mA. The IC can be switched off via the inhibit input, which causes the current consumption to drop below 10 µA. The IC is shortcircuit-proof and incorporates temperature protection that disables it at over-temperature. Dimensioning Information on External Components The input capacitor CI is necessary for compensating line influences. Using a resistor of approx. 1 Ω in series with CI, the oscillating of input inductivity and input capacitance can be damped. The output capacitor CQ is necessary for the stability of the regulation circuit. Stability is guaranteed at values CQ ≥ 22 µF and an ESR of ≤ 3 Ω within the operating temperature range. Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: • Overload • Overtemperature • Reverse polarity Semiconductor Group 2 1998-11-01 TLE 4276 Pin Configuration (top view) P-TO220-5-3 P-TO220-5-43 P-TO220-5-122 P-TO252-5-1 GND 1 5 1 5 Ι 5 1 Ι 5 1 GND INH Q N.C. Q INH N.C. (VA) AEP02560 AEP02043 Ι GND INH Q N.C. (VA) Ι AEP02041 GND INH Q N.C. (VA) AEP02042 Figure 1 Pin Definitions and Functions Pin No. Symbol Function 1 I Input; block to ground directly at the IC with a ceramic capacitor. 2 INH Inhibit; low-active input 3 GND Ground 4 N.C. VA Not connected for V50, V85, V10 Voltage Adjust Input; only for adjustable output from external voltage divider. 5 Q Output; block to ground with a ≥ 22 µF capacitor. Semiconductor Group 3 1998-11-01 TLE 4276 Saturation Control and Protection Circuit Temperature Sensor Ι 1 6 Control Amplifier Q Buffer Bandgap Reference *) **) 2 4 3 INH VA GND *) For fixed Voltage Regulator only **) For adjustable Voltage Regulator only AEB02044 Figure 2 Block Diagram Semiconductor Group 4 1998-11-01 TLE 4276 Absolute Maximum Ratings Tj = – 40 to 150 °C Parameter Symbol Limit Values min. max. Unit Test Condition Voltage Regulator Input Voltage VI – 42 45 V – Current II – – – Internally limited VINH – 42 45 V – VVA – 0.3 10 V – VQ IQ – 1.0 40 V – – – – Internally limited IGND – 100 mA – Tj Tstg – 150 °C – – 50 150 °C – Inhibit Voltage Voltage Adjust Input Voltage Output Voltage Current Ground Current Temperature Junction temperature Storage temperature Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Semiconductor Group 5 1998-11-01 TLE 4276 Operating Range Parameter Symbol Limit Values min. max. Unit Remarks Input voltage VI VQ + 0.5 40 V – Junction temperature Tj – 40 150 °C – Rthja Rthja Rthjc – 65 K/W TO220 – 70 K/W TO2521), TO263 – 4 K/W – Thermal Resistance Junction ambient Junction ambient Junction case 1) Soldered in, minimal footprint Characteristics VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values min. typ. Unit Measuring Condition max. Measuring Circuit Output voltage VQ 4.8 5 5.2 V 1 V50-Version 5 mA < IQ < 400 mA 6 V < VI < 40 V Output voltage VQ 8.16 8.5 8.84 V 1 V85-Version 5 mA < IQ < 400 mA 9.5 V < VI < 40 V Output voltage VQ 9.6 10 10.4 V 1 V10-Version 5 mA < IQ < 400 mA 11 V < VI < 40 V Output voltage ∆VQ tolerance –4 4 % V-Version VV.A.= 2.5 V 1 Output current IQ limitation1) 400 600 – mA – 1 Current consumption; Iq = II – IQ Iq – 0 10 µA VINH = 0 V; Tj ≤ 100 °C 1 Current consumption; Iq = II – IQ Iq – 100 220 µA IQ = 1 mA 1 Semiconductor Group 6 1998-11-01 TLE 4276 Characteristics (cont’d) VI = 13.5 V; – 40 °C < Tj < 150 °C (unless otherwise specified) Parameter Current consumption; Iq = II – IQ Symbol Iq Limit Values min. typ. Unit Measuring Condition max. – 5 10 mA IQ = 250 mA 1 15 25 mA IQ = 400 mA IQ = 250 mA VDR = VI – VQ IQ = 5 mA to 1 Iq VDR – 250 500 mV Load regulation ∆VQ – 5 35 mV Line regulation ∆VQ Drop voltage1) 1 1 400 mA – 10 25 mV Power supply PSRR ripple rejection – 60 – dB Temperature dVQ output voltage dT drift – 0.5 – – 1) Measuring Circuit ∆Vl = 12 V to 32V IQ = 5 mA fr = 100 Hz; Vr = 0.5 VSS – 1 1 mV/K Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V. Inhibit Inhibit on voltage VINH – 2 3.5 V VQ ≥ 4.9 V 1 Inhibit off voltage VINH 0.5 1.7 – V VQ ≤ 0.1 V 1 Input current IINH 5 10 20 µA VINH = 5 V 1 Semiconductor Group 7 1998-11-01 TLE 4276 ΙΙ Input 100 µ F CQ 22 µF 100 nF TLE 4276 Ι INH 2 VΙ ΙQ 5 1 Output R 1 *) *) 4 V INH 3 RL Voltage Adjust R 2 *) VQ *) Optional for adjustable Voltage Regulator AES02045 Figure 3 Measuring Circuit CΙ e.g. KL 15 Output 5 1 Input TLE 4276 CQ R 1 *) Voltage Adjust R 2 *) *) 2 4 3 *) Optional for adjustable Voltage Regulator AES02046 Figure 4 Application Circuit Semiconductor Group 8 1998-11-01 TLE 4276 Typical Performance Characteristics (V50, V85 and V10): Max. Output Current IQ versus Input Voltage VI Drop Voltage VDR versus Output Current IQ AED01962 600 V dr AED01963 800 mA mV ΙQ 600 T j = 125 C 400 T j = 25 C VQ = 0 V 400 300 200 100 0 200 T j = 25 C Vdr = V QNOM-0.1 V 0 0 100 200 300 mA 400 ΙQ Current Consumption Iq versus Output Current IQ (high load) Ιq Ιq T j = 25 C V Ι = 13.5 V 30 0.3 20 0.2 10 0.1 0 200 Semiconductor Group 300 400 mA ΙQ AED01965 T j = 25 C V Ι = 13.5 V 0.4 100 40 V 50 VΙ 30 mA 40 0 20 0.6 mA 0 10 Current Consumption Iq versus Output Current IQ (low load) AED01964 60 0 600 9 0 10 20 30 40 mA ΙQ 60 1998-11-01 TLE 4276 Typical Performance Characteristics for V50: Current Consumption Iq versus Input Voltage VI Output Voltage VQ versus Temperature Tj AED01966 5.20 V VQ AED01967 30 Ιq 5.10 mA V Ι = 13.5 V 20 5.00 T j = 25 C R L = 20 Ω 4.90 10 4.80 4.70 4.60 -40 0 0 80 40 120 C 160 Tj Low Voltage Behavior 10 20 30 50 V VΙ High Voltage Behavior AED01968 6 VQ 0 V VQ 5 AED01969 3.5 mA Ι Ι 3.0 2.5 4 2.0 VΙ =VQ 3 1.5 T j = 25 C R L = 20 Ω T j = 25 C R L = 3.3 k Ω 1.0 2 0.5 1 0 0 0 2 Semiconductor Group 4 6 -2 -50 8 V 10 VΙ -25 0 25 V 50 VΙ 10 1998-11-01 TLE 4276 Typical Performance Characteristics for V85: Current Consumption Iq versus Input Voltage VI Output Voltage VQ versus Temperature Tj AED01970 9.0 VQ AED01971 30 V Ιq mA V Ι = 13.5 V 20 8.5 T j = 25 C R L = 20 Ω 10 8.0 7.5 -40 0 0 80 40 120 C 160 Tj Low Voltage Behavior 10 20 30 50 V VΙ High Voltage Behavior AED01972 12 VQ 0 AED01973 3.5 mA Ι Ι 3.0 V 10 VQ 2.5 8 2.0 VΙ =VQ 1.5 6 T j = 25 C R L = 34 Ω T j = 25 C R L = 8.5 k Ω 1.0 4 0.5 2 0 0 0 4 Semiconductor Group 8 12 -2 -50 16 V 20 VΙ -25 0 25 V 50 VΙ 11 1998-11-01 TLE 4276 Typical Performance Characteristics for V10: Current Consumption Iq versus Input Voltage VI Output Voltage VQ versus Temperature Tj AED01974 10.5 VQ AED01975 30 V Ιq mA V Ι = 13.5 V 10.0 20 T j = 25 C R L = 20 Ω 9.5 10 9.0 -40 0 80 40 0 120 C 160 Tj Low Voltage Behavior 10 20 30 50 V VΙ High Voltage Behavior AED01976 12 VQ 0 V VQ 10 AED01977 3.5 mA Ι Ι 3.0 2.5 8 2.0 VΙ =VQ 1.5 6 T j = 25 C R L = 34 Ω T j = 25 C R L = 10 k Ω 1.0 4 0.5 2 0 0 0 4 Semiconductor Group 8 12 -2 -50 16 V 20 VΙ -25 0 25 V 50 VΙ 12 1998-11-01 TLE 4276 Package Outlines P-TO220-5-3 (Plastic Transistor Single Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information” Semiconductor Group 13 Dimensions in mm 1998-11-01 TLE 4276 P-TO220-5-43 (Plastic Transistor Single Outline) Semiconductor Group 14 1998-11-01 TLE 4276 P-TO220-5-122 (Plastic Transistor Single Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 15 Dimensions in mm 1998-11-01 TLE 4276 P-TO252-5-1 (Plastic Transistor Single Outline) 2.3 +0.05 -0.10 A 1 ±0.1 0...0.15 0.5 +0.08 -0.04 5x0.6 ±0.1 1.14 4.56 0.9 +0.08 -0.04 0.51 min 0.15 max per side B 5.4 ±0.1 0.8 ±0.15 (4.17) 9.9 ±0.5 6.22 -0.2 1 ±0.1 6.5 +0.15 -0.10 0.1 0.25 M A B GPT09161 All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 16 Dimensions in mm 1998-11-01