BUP 309 IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Pin 1 Pin 2 G Type VCE IC BUP 309 1700V 25A Pin 3 C E Package Ordering Code TO-218 AB Q67078-A4204-A2 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values Unit 1700 V 1700 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 25 TC = 90 °C 16 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 50 TC = 90 °C 32 EAS Avalanche energy, single pulse mJ IC = 15 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C 23 Ptot Power dissipation TC = 25 °C W 310 Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 °C Jul-30-1996 BUP 309 Maximum Ratings Parameter Symbol DIN humidity category, DIN 40 040 - IEC climatic category, DIN IEC 68-1 - Values Unit E - 55 / 150 / 56 Thermal Resistance ≤ 0.4 RthJC Thermal resistance, chip case K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 1 mA V 4.5 5.5 6.5 VGE = 15 V, IC = 15 A, Tj = 25 °C - 3.5 4.2 VGE = 15 V, IC = 15 A, Tj = 125 °C - - - VGE = 15 V, IC = 15 A, Tj = 150 °C - 4.5 - Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES µA VCE = 1700 V, VGE = 0 V, Tj = 25 °C - 1 250 VCE = 1700 V, VGE = 0 V, Tj = 125 °C - - 1000 Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 100 AC Characteristics Transconductance gfs VCE = 20 V, IC = 15 A Input capacitance - pF - 2000 2700 - 160 240 - 65 100 Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-30-1996 BUP 309 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 1200 V, VGE = 15 V, IC = 15 A RGon = 33 Ω Rise time - - - - - - - 150 230 - 50 80 tr VCC = 1200 V, VGE = 15 V, IC = 15 A RGon = 33 Ω Turn-off delay time td(off) VCC = 1200 V, VGE = -15 V, IC = 15 A RGoff = 33 Ω Fall time tf VCC = 1200 V, VGE = -15 V, IC = 15 A RGoff = 33 Ω Semiconductor Group 3 Jul-30-1996 BUP 309 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 26 320 A W Ptot 22 IC 240 20 18 200 16 14 160 12 10 120 8 80 6 4 40 2 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C TC 160 TC Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 IGBT 10 0 t = 3.4µs p A K/W 10 µs IC 10 1 ZthJC 10 -1 100 µs 1 ms D = 0.50 0.20 10 0 10 -2 10 ms 0.10 0.05 0.02 single pulse 0.01 DC 10 -1 10 0 10 1 10 2 10 3 10 -3 -5 10 V VCE Semiconductor Group 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-30-1996 BUP 309 Package Outlines Dimensions in mm Weight: 8 g Semiconductor Group 5 Jul-30-1996