IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Product Summary V DC 600 V • Revolutionary semiconductor material - Silicon Carbide Qc 3.2 nC • No reverse recovery/ no forward recovery IF 2 A • Temperature independent switching behavior • High surge current capability PG-TO220-2-2 • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) • Optimized for high temperature operation thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC Type Package Marking Pin 1 Pin 2 IDT02S60C PG-TO220-2-2 D02S60C C A Maximum ratings Parameter Symbol Conditions Continuous forward current IF RMS forward current I F,RMS Surge non-repetitive forward current, I F,SM sine halfwave Value T C<120 °C 2 T C<70 °C 3 f =50 Hz 2.8 T C=25 °C, t p=10 ms 11.5 T C=150°C, t p=10 ms 9.7 Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D =0.1 7.3 Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 100 i ²t value ∫i 2dt T C=25 °C, t p=10 ms 0.61 T C=150°C, t p=10 ms 0.44 Unit A A2s Repetitive peak reverse voltage V RRM T j=25 °C 600 V Diode dv/dt ruggedness dv/ dt V R = 0….480V 50 V/ns Power dissipation P tot T C=25 °C 18 W Operating and storage temperature T j, T stg -55 ... 175 °C Mounting torque Rev. 2.0 M3 and M3.5 screws page 1 60 Mcm 2007-04-25 IDT02S60C Parameter Values Symbol Conditions Unit min. typ. max. - - 8.5 Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6mm (0.063 in.) from case for 10s - - 260 °C DC blocking voltage V DC I R=0.05mA, T j=25°C 600 - - V Diode forward voltage VF I F=2 A, T j=25 °C - 1.7 1.9 I F=2 A, T j=150 °C - 2.1 2.6 I F=3 A, T j=25 °C - 2.1 2.4 I F=3 A, T j=150 °C - 2.8 3.7 V R=600 V, T j=25 °C - 0.23 15 V R=600 V, T j=150 °C - 1 150 - 3.2 - nC - - <10 ns pF K/W Electrical characteristics Static characteristics Reverse current IR µA AC characteristics Total capacitive charge Qc Switching time3) tc V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C C V R=1 V, f = MHz - 60 - V R=300 V, f =1 MHz - 8 - V R=600 V, f =1 MHz - 8 - 1) J-STD20 and JESD22 2) All devices tested under avalanche condition, for a time periode of 5ms, at 5mA. 3) tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 4) Rev. 2.0 Only capacitive charge occuring, guaranteed by design. page 2 2007-04-25 IDT02S60C 1 Power dissipation 2 Diode forward current P tot=f(T C) I F=f(T C); T j≤175 °C parameter: RthJC(max) parameter: D=t P /T 14 20 12 0.1 16 10 12 I F [A] P tot [W] 8 0.3 6 8 0.5 0.7 4 1 4 2 0 0 25 75 125 25 175 75 T C [°C] 125 175 T C [°C] 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current I F=f(V F); t p=400 µs mode parameter: T j I F=f(V F); t p=400 µs; parameter: Tj 15 3 25ºC 150ºC -55ºC 100ºC 12 IF IF 175ºC 2 175ºC I F [A] I F [A] 9 -55ºC 6 150ºC 25ºC 1 100ºC 3 0 0 0 1 2 3 4 V F[V] Rev. 2.0 0 2 4 6 8 V F[V] page 3 2007-04-25 IDT02S60C 5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage 4) I R=f(V R) Q C=f(di F/dt ) ; T j=150 °C; I F≤I F,max parameter: T j 10-5 4 10-6 3 175 °C 150 °C I R [µA] Q C [nC] 10-7 2 100 °C 10-8 25 °C -55 °C 1 10-9 10-10 100 0 100 400 700 1000 200 300 di F/d t [A/µs] 400 500 600 V R [V] 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p) C =f(V R); T C=25 °C, f =1 MHz parameter: D =t p/T 101 60 0.5 0.2 Z thJC [K/W] 100 45 0.1 C [pF] 0.05 0.02 10-1 30 0 15 10-2 10-5 0 10-4 10-3 10-2 10-1 101 102 103 V R [V] t P [s] Rev. 2.0 100 page 4 2007-04-25 IDT02S60C 9 Typ. C stored energy E C=f(V R) 1.8 1.5 E c [µC] 1.3 1.0 0.8 0.5 0.3 0.0 0 100 200 300 400 500 600 V R [V] Rev. 2.0 page 5 2007-04-25 IDT02S60C Package Outline:PG-TO220-2-2 Rev. 2.0 page 6 2007-04-25 IDT02S60C Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 2007-04-25