BYG23T-M3 Datasheet

BYG23T-M3
www.vishay.com
Vishay General Semiconductor
High Voltage Ultrafast Avalanche SMD Rectifiers
FEATURES
• Glass passivated pellet chip junction
• Low profile package
• Ideal for automated placement
• Low reverse current
• High reverse voltage
• Ultra fast reverse recovery time
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
1300 V
IFSM
18 A
trr
75 ns
ER
5 mJ
VF at IF = 1.0 A (TA = 125 °C)
1.39 V
TJ max.
150 °C
Package
DO-214AC (SMA)
Diode variations
Single die

TYPICAL APPLICATIONS
For use in high voltage, high frequency rectification specially
suited for freewheeling, clamping, snubbering in power
supply, ignition drive of HID, UHP and industrial ballast and
snubber for PDP TV power supply application.
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
per
Polarity: Color band denotes the cathode end




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MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
BYG23T
UNIT
BYG23T
VRRM
1300
V
Maximum DC forward current (fig.1)
IF
(1)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
18
A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I(BR)R = 0.4 A, TL = 25 °C
ER
5
mJ
Maximum operating junction temperature
TJ
150
°C
TSTG
-55 to +150
°C
Storage temperature range
Note
• Free air, mounted on recommended copper pad area
Revision: 19-Feb-15
Document Number: 89429
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG23T-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA = 25 °C
Instantaneous forward voltage (1)
IF = 1.0 A
Reverse current (2)
VR = 1300 V
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Forward recovery time
Peak forward voltage
IF = 1.5 A, dI/dt = 12 A/μs, 
VF = 1.1 x VF max.
Typical junction capacitance
4.0 V, 1 MHz
VF
TA = 125 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
MAX.
1.74
1.9
1.39
1.65
UNIT
V
-
5.0
2.9
50
trr
65
75
tfr
620
-
VFP
9.0
-
V
CJ
9.0
-
pF
IR
TA = 125 °C
TYP.
μA
ns
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG23T
RJA
120
RJM
20
Typical thermal resistance (1)
UNIT
°C/W
Note
(1) Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance R
JA - junction to ambient, RJM - junction to mount.
ORDERING INFORMATION (Example)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QANTITY
DELIVERY MODE
BYG23T-M3/TR
PREFERRED P/N
0.064
TR
1800
7" diameter plastic tape and reel
BYG23T-M3/TR3
0.064
TR3
7500
13" diameter plastic tape and reel
Revision: 19-Feb-15
Document Number: 89429
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG23T-M3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Instantaneous Reverse Current (mA)
1.2
0.8
0.6
0.4
TM - Measured
at the Lead terminal
0.2
0
0
25
50
75
100
150
TA = 150 °C
TA = 125 °C
1
TA = 25 °C
0.1
0.01
175
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
100
D = 0.5
1.8
D = 0.8
D = 0.3
1.6
D = 0.2
1.4
D = 1.0
D = 0.1
1.2
1.0
0.8
T
0.6
0.4
0.2
D = tp/T
0
TJ = 25 °C
f = 1.0 MHz
Vstg = 50 mVp-p
10
tp
0
1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
20
Instantaneous Forward Current (A)
10
TM - Mount Temperature (°C)
2.0
Average Power Loss (W)
125
Junction Capacitance (pF)
DC Forward Current (A)
1.0
100
10
TA = 150 °C
1
TA = 125 °C
TA = 25 °C
0.1
0.4 0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
Junction to Ambient
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance

Revision: 19-Feb-15
Document Number: 89429
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG23T-M3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 19-Feb-15
Document Number: 89429
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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