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SD2931-12MR
150 W – 50 V moisture resistant HF/VHF DMOS transistor
Datasheet - production data
Description
The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor.
Electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V DC large
signal applications up to 230 MHz.
The SD2931-12MR is mechanically compatible
with the SD2931 but offers better thermal
capability (25% lower thermal resistance),
representing the best-in-class in transistors for
ISM applications, where reliability and
ruggedness are critical factors.
M174MR Epoxy sealed
Figure 1: Pin connection
1. Drain
4
1
3
2
The SD2931-12MR benefits from the latest
generation of environmentally designed
packaging, ruggedized against cyclic high
moisture operation and severe storage
conditions.
2. Source
3. Gate
4. Source
Table 1: Device summary
Features







Gold metallization
Excellent thermal stability
Common source, push-pull configuration
POUT = 150 W min. with 14 dB gain @ 175
MHz
Thermally enhanced packaging for lower
junction temperatures
GFS and VGS sort marked on unit
Moisture resistant package specifically
designed to operate in extreme
environments
September 2013
Order code
Marking
Package
Packaging
SD2931-12MR
SD2931-12MR(1)
M174MR
Plastic tray
Notes:
(1)
For more details please refer to "Marking, packing
and shipping specifications".
DocID023650 Rev 2
This is information on a product in full production.
1/18
www.st.com
Contents
SD2931-12MR
Contents
1
Electrical data .................................................................................. 3
1.1
Maximum rating................................................................................. 3
1.2
Thermal data ..................................................................................... 3
2
Electrical characteristics ................................................................ 4
3
Impedance ....................................................................................... 5
4
Transient thermal impedance ......................................................... 6
5
Typical performance ....................................................................... 8
5.1
Typical performance (175 MHz) ........................................................ 9
5.1.1
5.3
Test circuit (175 MHz) ...................................................................... 10
Typical performance (30 MHz) ........................................................ 12
5.3.1
Test circuit (30 MHz) ........................................................................ 13
6
Marking, packing and shipping specifications............................ 14
7
Package information ..................................................................... 15
7.1
8
2/18
M174MR package information ........................................................ 15
Revision history ............................................................................ 17
DocID023650 Rev 2
SD2931-12MR
Electrical data
1
Electrical data
1.1
Maximum rating
T CASE= 25 °C
Table 2: Absolute maximum rating
Symbol
1.2
Parameter
Value
Unit
V(BR)DSS
Drain source voltage
125
V
VDGR
Drain-gate voltage (RGS = 1MW)
125
V
VGS
Gate-source voltage
±20
V
ID
Drain current
20
A
PDISS
Power dissipation
389
W
TJ
Max. operating junction temperature
200
°C
TSTG
Storage temperature
-65 to +150
°C
Thermal data
Table 3: Thermal data
Symbol
RthJC
Parameter
Junction to case thermal resistance
DocID023650 Rev 2
Value
0.45
Unit
°C/W
3/18
Electrical characteristics
2
SD2931-12MR
Electrical characteristics
T CASE= 25 °C
Table 4: Static
Symbol
Test conditions
Min.
125
Typ.
Max.
Unit
V(BR)DSS
VGS = 0 V
IDS = 100 mA
IDSS
VGS = 0 V
VGS = 0 V
VDS = 5 V
VDS = 50 V
20
50
µA
VGS = 20 V
VDS = 0 V
250
nA
VDS = 10 V
ID = 250 mA
VGS = 10 V
I D = 10 A
GFS
VDS = 10 V
ID=5A
CISS
VGS = 0 V
VDS = 50 V
COSS
VGS = 0 V
CRSS
VGS = 0 V
IGSS
VGS(Q)
(1)
VDS(ON)
(1)
V
see table below
3.0
V
V
see table below
mho
f = 1 MHz
480
pF
VDS = 50 V
f = 1 MHz
190
pF
VDS = 50 V
f = 1 MHz
18
pF
Notes:
(1)
VGS(Q) and GFS sorted with alpha/numeric code marked on unit.
Table 5: VGS and GFS sorts
VGS
GFS
I
2.65 - 3.15
6.0 - 6.5
J
2.65 - 3.15
6.5 - 7.0
K
2.65 - 3.15
7.0 - 7.5
Table 6: Dynamic
Symbol
4/18
Test conditions
POUT
VDD = 50 V
f = 175MHz
IDQ = 250 mA
GPS
VDD = 50 V
f = 175MHz
IDQ = 250 mA POUT = 150 W
ηD
VDD = 50 V
f = 175MHz
IDQ = 250 mA POUT = 150 W
Load mismatch
VDD = 50 V IDQ = 250 mA POUT = 150 W
f = 175MHz
all phase angles
DocID023650 Rev 2
Min.
Typ.
150
Max.
Unit
W
14
15
dB
55
65
%
10:1
VSWR
SD2931-12MR
3
Impedance
Impedance
Figure 2: Impedance data schematic
D
ZDL
Typical input
impedance
G
Typical load
impedance
ZIN
S
Table 7: Impedance data
f
Z IN(Ω)
Z DL(Ω)
30 MHz
1.7 - j 5.7
6.8 + j 0.9
175 MHz
1.2 - j 2.0
2.0 + j 2.4
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5/18
Transient thermal impedance
4
SD2931-12MR
Transient thermal impedance
Figure 3: Transient thermal impedance
Single - repetitive pulse
Thermal impedance -ZTHJ - C (°C / W)
0.50
single pulse
10%
0.45
20%
0.40
30%
40%
0.35
50%
60%
0.30
70%
80%
0.25
90%
0.20
0.15
0.10
0.05
0.00
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Rectangular power pulse width (sec)
6/18
DocID023650 Rev 2
1.E+01
AM09280V1
SD2931-12MR
Transient thermal impedance
Figure 4: Transient thermal impedance model
DissipatedPower_Watts
R1
R=0.023 Ohm
C
C1
C=.0020978 F
R
R2
R=.072 Ohm
C
C2
C=.0021832 F
R
R3
R=.200 Ohm
C
C3
C=.0244758 F
R
R4
R=.155 Ohm
C
C4
C=.2057373 F
AM09281V1
DocID023650 Rev 2
7/18
Typical performance
5
SD2931-12MR
Typical performance
Figure 5: Capacitance vs. drain voltage
Figure 6: Drain current vs. gate voltage
10000
20
Tc=-20 °C
f =1M Hz
Tc=+25 °C
15
1000
Ciss
10
Tc=+80 °C
C oss
100
VDS = 10 V
5
Crss
10
0
10
20
30
40
50
0
2
2.5
3
VDS, DR AIN-SOURC E VOLTAGE (V)
3.5
4
4.5
5
5.5
6
VGS, GATE-SOURCE VOLTAGE (V)
Figure 7: Gate-source voltage vs. case
temperature
Figure 8: Maximum thermal resistance vs. case
temperature
0.6
0.56
0.52
0.48
0.44
25
35
45
65
T , CASE TEMPERATURE (°C)
C
T , CASE TEMPERATURE (°C)
C
Figure 9: Safe operating area
8/18
55
DocID023650 Rev 2
75
85
SD2931-12MR
5.1
Typical performance
Typical performance (175 MHz)
Figure 10: Output power vs. input power
Figure 11: Output power vs. input power at
different Tc
270
270
240
Tc =-20 °C
240
Vdd= 50V
210
Tc =+25 °C
210
180
180
Vdd= 40V
150
150
120
120
90
90
60
Vdd= 50V
Idq= 250mA
f= 175MHz
60
f= 175MHz
Idq= 250mA
30
Tc =+80 °C
30
0
0
0
5
10
15
20
0
25
5
10
15
20
25
P , INPUT POWER (W)
P , INPUT POWER (W)
Figure 12: Power gain vs. output power
Figure 13: Efficiency vs. output power
IN
IN
18
80
16
70
14
60
12
50
40
10
Vdd=50V
Idq=250mA
f=175Mhz
8
Vdd=50V
Idq=250mA
f=175Mhz
30
20
6
0
50
100
P
OUT
150
200
0
250
50
100
, INPUT POWER (W)
P
150
200
250
, INPUT POWER (W)
OUT
Figure 14: Output power vs. supply voltage
Figure 15: Drain current vs. gate-source voltage
20
270
Pin =10W
240
Tc=-20 °C
210
Tc=+25 °C
15
Pin =5W
180
150
10
Pin =2.5W
Tc=+80 °C
120
90
5
60
Idq= 250mA
f= 175MHz
30
0
0
24
28
32
36
40
VDD, DRAIN VOLTAGE (V)
44
48
52
2
2.5
3
V
GS
DocID023650 Rev 2
3.5
4
4.5
5
5.5
6
, GATE-SOURCE VOLTAGE (V)
9/18
Typical performance
5.1.1
SD2931-12MR
Test circuit (175 MHz)
Figure 16: 175 MHz test circuit schematic (production test circuit)
VG
+50V
Table 8: 175 MHz test circuit parts list
Component
10/18
Description
T1
4:1 transformer, 25 Ω flexible coax .090 OD 6” long
T2
1:4 transformer, 25 Ω semi-rigid coax .141 OD 6” long
FB1
Toroid X 2, 0.5” OD .312” ID 850µ 2 turns
FB2, FB3
VK200
FB4
Shield bead, 1” OD 0.5” ID 850µ 3 turns
L1
1/4 wave choke, 50 Ω semi-rigid coax .141 OD 12” Long
PCB
0.62” woven fiberglass, 1 oz. copper, 2 Sides, εr = 2.55
R1, R3
470 Ω 1 W chip resistor
R2
360 Ω 1/2 W resistor
R4
20 kΩ 10 turn potentiometer
R5
560 Ω 1 W resistor
C1, C11
470 pF ATC chip cap
C2
43 pF ATC chip cap
C3, C8, C9
Arco 404, 12-65 pF
C4
Arco 423, 16-100 pF
C5
120 pF ATC chip cap
C6
0.01 µF ATC chip cap
C7
30 pF ATC chip cap
C10
91 pF ATC chip cap
C12, C15
1200 pF ATC chip cap
C13, C14,C16, C17
0.01 µF / 500 V chip cap
C18
10 µF 63 V electrolytic capacitor
DocID023650 Rev 2
SD2931-12MR
Typical performance
Figure 17: 175 MHz test circuit photomaster
Figure 18: 175 MHz test circuit
DocID023650 Rev 2
11/18
Typical performance
5.3
SD2931-12MR
Typical performance (30 MHz)
Figure 19: Output power vs. input power
Figure 20: Power gain vs. output power
2 50
30
Vdd = 50 V
29
2 00
28
Gp (dB)
Pout (W)
1 50
Vd d = 40 V
27
1 00
26
50
25
f = 3 0 MH z
ID Q = 2 5 0 m A
0
0
0 .1
0 .2
0 .3
0 .4
f = 3 0 MH z
VD D = 5 0 V
ID Q = 2 5 0 m A
24
0 .5
0
40
80
1 20
P in ( W )
1 60
2 00
P o ut (W )
Figure 21: Efficiency vs. output power
Figure 22: Output power vs. supply voltage
70
200
P in = 0 .3 1 W
60
180
160
P in = 0 .2 2 W
50
40
120
Pout (W)
Nd (%)
140
30
100
P in = 0 .1 3 W
80
20
60
f = 30 MHz
VD D = 5 0 V
ID Q = 2 5 0 m A
10
40
f = 30 MHz
ID Q = 2 50 m A
20
0
0
0
40
80
120
160
24
200
28
32
36
40
Vd d (V)
P o u t (W )
Figure 23: Output power vs. gate-source voltage
1 80
T = + 2 5 °C
1 60
T = -2 0 °C
1 40
1 20
Pout (W)
T = + 8 0 °C
1 00
80
60
VD D = 5 0 V
ID Q = 2 5 0 m A
f = 3 0 MHz
P in = C o n s ta n t
40
20
0
0
1
2
3
VG S (V)
12/18
DocID023650 Rev 2
4
5
6
44
48
52
SD2931-12MR
5.3.1
Typical performance
Test circuit (30 MHz)
Figure 24: 30 MHz test circuit schematic (production test circuit)
+50V
VG+
Table 9: 30 MHz test circuit part list
Component
Description
T1
9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15”
long
T2
1:4 transformer, 50 Ω flexible coax .225 OD 15” long
FB1
Toroid 1.7” OD .30” ID 220µ 4 turns
FB2
Surface mount EMI shield bead
FB3
Toroid 1.7” OD .300” ID 220µ 3 turns
RFC1
Toroid 0.5” OD 0.30” ID 125µ 4 turns 12 awg wire
PCB
0.62” woven fiberglass, 1 oz. copper, 2 Sides, εr = 2.55
R1, R3
1 kohm 1 W chip resistor
R2
680 ohm 3 W wirewound resistor
C1,C4,C6,C7,C8,C9,
C11,C12,C13
0.1 μF ATC chip cap
C2,C3
750 pF ATC chip cap
C5
470 pF ATC chip cap
C10
10 μF 63 V electrolytic capacitor
C14
100 μF 63 V electrolytic capacitor
DocID023650 Rev 2
13/18
Marking, packing and shipping specifications
6
SD2931-12MR
Marking, packing and shipping specifications
Table 10: Packing and shipping specifications
Order code
Packaging
Pcs per
tray
Dry pack humidity
VGS and GFS code
Lot code
SD2931-12MR
Plastic tray
25
< 10%
Not mixed
Not mixed
Figure 25: Marking layout for SD2391-12MR
AM14750V1
Table 11: Marking specifications
Symbol
X
VGS and GFS sort
CZ
Assembly plant
xxx
Last 3 digits of diffusion lot
VY
Diffusion plant
MAR
CZ
14/18
Description
Country of origin
Test and finishing plant
y
Assembly year
yy
Assembly week
DocID023650 Rev 2
SD2931-12MR
Package information
7
Package information
7.1
M174MR package information
Figure 26: M174MR drawing
8410504_A
DocID023650 Rev 2
15/18
Package information
SD2931-12MR
Table 12: M174MR mechanical data
Dim.
mm
Min.
A
5.56
B
Max.
5.84
3.18
C
6.22
6.48
D
18.29
18.54
E
3.18
F
24.64
24.89
G
12.07
12.83
H
0.08
0.18
I
2.11
3.00
J
3.81
4.45
K
16/18
Typ.
8.00
L
25.53
26.67
M
3.05
3.30
DocID023650 Rev 2
SD2931-12MR
8
Revision history
Revision history
Table 13: Document revision history
Date
Revision
20-Feb-2013
1
10-Sep-2013
2
Changes
First issue.

Document promoted from preliminary data to full datasheet.

Formatting and minor text changes.
DocID023650 Rev 2
17/18
SD2931-12MR
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