BFR280W NPN Silicon RF Transistor 3 For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m fT = 7.5 GHz 2 F = 1.5 dB at 900 MHz 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR280W REs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 8 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 Base current IB 1.2 Total power dissipation Ptot 80 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 V mA TS = 115 °C 1) Thermal Resistance Junction - soldering point2) RthJS 435 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-27-2001 BFR280W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 8 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 30 100 200 DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 3 mA, VCE = 5 V 2 Jun-27-2001 BFR280W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 5 7.5 - Ccb - 0.27 0.45 Cce - 0.18 - Ceb - 0.22 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure F dB IC = 1.5 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz - 1.5 - f = 1.8 GHz - 2 - IC = 3 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz - 17.5 - f = 1.8 GHz - 13.5 - IC = 3 mA, VCE = 5 V, ZS = ZL = 50 , f = 900 MHz - 14 - IC = 3 mA, VCE = 5 V - 9 - Power gain, maximum stable 1) Gms |S21e|2 Transducer gain 1G ms = |S21 / S12 | 3 Jun-27-2001 BFR280W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 6.472 fA BF = 89.888 - NF = 1.0801 - VAF = 25.609 V IKF = 0.073457 A ISE = 15.596 fA NE = 1.6163 - BR = 20.238 - NR = 0.83403 - VAR = 5.6909 V IKR = 0.012696 A ISC = 1.409 fA NC = 1.0651 - RB = 15 IRB = 0.031958 mA RBM = 14.999 RE = 2.4518 RC = 6.989 CJE = 36.218 fF VJE = 0.70035 V MJE = 0.69773 - TF = 11.744 ps XTF = 0.21585 - VTF = 0.2035 V ITF = 6.2179 mA PTF = 0 deg CJC = 252.99 fF VJC = 1.1943 V MJC = 0.30017 - XCJC = 0.19188 - TR = 2.3693 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.96275 - TNOM 300 K L BI = 0.57 nH L BO = 0.4 nH L EI = 0.43 nH L EO = 0.5 nH L CI = 0 nH L CO = 0.41 nH C BE = 61 fF C CB = 101 fF C CE = 175 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-27-2001 BFR280W Total power dissipation Ptot = f (TS ) 100 mW P tot 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 1 Ptotmax / PtotDC 10 3 RthJS K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Jun-27-2001 BFR280W Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 0.5 11 GHz pF 9 10V 8V 5V fT Ccb 8 0.3 7 3V 6 2V 5 0.2 4 1V 3 0.1 0.7V 2 1 0.0 0 2 4 6 V 8 0 0 11 2 4 6 mA 8 VCB 11 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 14 10V dB dB 10V 3V 2V 2V G 10 G 16 14 8 1V 1V 12 6 0.7V 0.7V 10 4 8 2 6 0 2 4 6 8 mA 0 0 11 IC 2 4 6 8 mA 11 IC 6 Jun-27-2001 BFR280W Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 18 20 IC=3mA 0.9GHz 8V dBm dB 5V 3V 12 0.9GHz 2V IP 3 14 G 1.8GHz 8 12 1V 4 10 1.8GHz 0 8 -4 6 4 0 -8 2 4 6 V 8 -12 0 12 2 4 6 8 VCE mA 11 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 20 30 IC =3mA IC=3mA dB dB 16 S21 14 G 20 12 10 15 8 10 6 10V 0.7V 5 10V 1V 4 1V 0.7V 2 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 0 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 7 Jun-27-2001