SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M (NPN) 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 92M s2D Q62702-A1244 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 DC collector current IC 500 Base current IB 100 Total power dissipation, T S ≤ 83 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature T stg V mA - 65...+150 Thermal Resistance Junction ambient 1) RthJA ≤100 Junction - soldering point RthJS ≤45 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11 Mar-13-1998 1998-11-01 SMBTA 92M Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. V(BR)CEO 300 - - V(BR)CBO 300 - - Emitter-base breakdown voltage V(BR)EBO 5 - - I E = 10 µA, I C = 0 Collector cutoff current I CBO - - 250 nA I CBO - - 20 µA I EBO - - 100 nA DC characteristics Collector-emitter breakdown voltage V I C = 100 µA, IB = 0 Collector-base breakdown voltage I C = 100 µA, IB = 0 VCB = 200 V, I E = 0 Collector-base cutoff current VCB = 200 V, T A = 150 °C Emitter cutoff current VEB = 3 V, I C = 0 hFE DC current gain 1) - I C = 1 mA, V CE = 10 V 25 - - I C = 10 mA, VCE = 10 V 40 - - I C = 30 mA, VCE = 10 V 25 - - VCEsat - - 0.5 VBEsat - - 0.9 50 - - MHz - - 6 pF Collector-emitter saturation voltage1) V I C = 20 mA, I B = 2 mA Base-emitter saturation voltage 1) I C = 20 mA, I B = 2 mA AC Characteristics fT Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Ccb Collector-base capacitance VCB = 20 V, f = 1 MHz 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Mar-13-1998 1998-11-01 SMBTA 92M Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy DC current gain hFE = f (I C) VCE = 10V 1800 10 3 mW EHP00883 5 h FE 1400 P tot SMBTA 92/93 TS 1200 10 2 5 1000 TA 800 2 600 10 1 400 5 200 0 0 20 40 60 80 120 s 100 10 0 -1 10 150 5 10 0 5 10 1 5 10 2 mA 10 3 tp ΙC Permissible Pulse Load Permissible Pulse Load R thJS = f (tp) Ptotmax / PtotDC = f (tp) 10 2 10 3 Ptotmax / PtotDC RthJS K/W 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 s 10 10 0 -6 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Semiconductor Group Semiconductor Group 33 Mar-13-1998 1998-11-01 SMBTA 92M Collector cutoff current I CBO = f (T A) Collector current I C = f (VBE) VCB = 160V VCE = 10V 10 4 Ι CB0 SMBTA 92/93 EHP00881 10 3 SMBTA 92/93 EHP00882 mA nA ΙC max 10 3 10 2 5 10 2 10 1 5 10 1 typ 10 10 0 0 10 -1 5 0 50 100 C 10 -1 150 0 TA Semiconductor Group Semiconductor Group 0.5 V 1.0 1.5 V BE 44 Mar-13-1998 1998-11-01